| Literature DB >> 28706673 |
G Tarabella1, P D'Angelo1, A Cifarelli1, A Dimonte1, A Romeo1, T Berzina1, V Erokhin1, S Iannotta1.
Abstract
A hybrid bio-organic electrochemical transistor was developed by interfacing an organic semiconductor, poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate), with the Physarum polycephalum cell. The system shows unprecedented performances since it could be operated both as a transistor, in a three-terminal configuration, and as a memristive device in a two terminal configuration mode. This is quite a remarkable achievement since, in the transistor mode, it can be used as a very sensitive bio-sensor directly monitoring biochemical processes occurring in the cell, while, as a memristive device, it represents one of the very first examples of a bio-hybrid system demonstrating such a property. Our system combines memory and sensing in the same system, possibly interfacing unconventional computing. The system was studied by a full electrical characterization using a series of different gate electrodes, namely made of Ag, Au and Pt, which typically show different operation modes in organic electrochemical transistors. Our experiment demonstrates that a remarkable sensing capability could potentially be implemented. We envisage that this system could be classified as a Bio-Organic Sensing/Memristive Device (BOSMD), where the dual functionality allows merging of the sensing and memory properties, paving the way to new and unexplored opportunities in bioelectronics.Entities:
Year: 2015 PMID: 28706673 PMCID: PMC5489029 DOI: 10.1039/c4sc03425b
Source DB: PubMed Journal: Chem Sci ISSN: 2041-6520 Impact factor: 9.825
Fig. 1(A) Schematic diagram of the OECT based on PEDOT:PSS (the black stripe is the PEDOT:PSS film) where the gate electrode is immersed into the Physarum polycephalum cell (the yellow area in the figure). (B) Normalized kinetic curves (I ds/I ds,min vs. time) and corresponding (C) current modulation (ΔI/I 0): each step corresponds to an increment of 0.2 V of the gate voltage.
Fig. 2Typical output characteristics (I ds vs. V ds at different V gs) of the PPC-OECT device recorded by using Au (A), Pt (B) and Ag (C) wires as gate electrodes inserted into the PPC. Corresponding transfer characteristics (I ds vs. V gs) for Au, Pt and Ag gate electrodes (V ds = –0.4 V) are reported in panels D, E and F, respectively. The last three panels show the transfer characteristics acquired using a standard NaCl solution as electrolyte (0.15 M) and Au (G), Pt (H) and Ag (I) gate electrodes.
Fig. 3(A) Photo of the PPC-OECT device where the slime mould cell (yellow) and the gate electrode body covered by a Teflon film are visible. (B) Kinetic curve acquired with the protected gate; at the time of 240 s the gate voltage (V gs = +0.4 V) was turned on.
Fig. 4(A–C) Plots of the I–V measurements for 3 different working electrodes (Pt, Au and Ag) and with the PEDOT:PSS stripe used as the reference electrode. The voltage applied spans from –4 to +4 V, with a 0.2 V step. (D) Plot of the I–V measurement with a Pt-gate electrode with the mould and with a standard PBS 0.1 M electrolyte.