| Literature DB >> 31937787 |
Yanzhou Li1,2, Xiaoming Jiang1, Zhihua Fu1, Qingqing Huang1,2, Guan-E Wang1, Wei-Hua Deng1, Chen Wang3,4, Zhenzhu Li3,4, Wanjian Yin3,4, Banglin Chen5, Gang Xu6,7.
Abstract
Engineering the band gap chemically by organic molecules is a powerful tool with which to optimize the properties of inorganic 2D materials. The obtained materials are however still limited by inhomogeneous compositions and properties at nanoscale and small adjustable band gap ranges. To overcome these problems in the traditional exfoliation and then organic modification strategy, an organic modification and then exfoliation strategy was explored in this work for preparing 2D organic metal chalcogenides (OMCs). Unlike the reported organically modified 2D materials, the inorganic layers of OMCs are fully covered by long-range ordered organic functional groups. By changing the electron-donating ability of the organic functional groups and the electronegativity of the metals, the band gaps of OMCs were varied by 0.83 eV and their conductivities were modulated by 9 orders of magnitude, which are 2 and 107 times higher than the highest values observed in the reported chemical methods, respectively.Entities:
Year: 2020 PMID: 31937787 PMCID: PMC6959344 DOI: 10.1038/s41467-019-14136-8
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Comparison between new and reported synthetic strategies for 2D materials.
a organic modification and then exfoliation (M–E) strategy for OMCs; b exfoliation and then organic modification (E–M) strategy for the known 2D materials.
Fig. 2Synthesis and characterization of OMCs.
a Optical photograph and b SEM of the parent bulk MOF of Cu(SPh-OH); c AFM image of monolayer Cu(SPh-OH); d TEM of Cu(SPh-OH) and e, its corresponding SAED pattern; f PXRD pattern of Cu(SPh-OH) and its parent bulk MOF crystal.
Fig. 3Band gap modulation and band structure calculation of OMCs.
a The band gap of OMCs modulated by changing the components (calculated from UV–vis diffuse reflectance spectra); b calculated band structure of bulk Cu(SPh-OH) and its corresponding VBM and CBM at Gamma (G) point; c calculated band structure of monolayer Cu(SPh-OH) and its corresponding VBM and CBM at Gamma (G) point.
Fig. 4Conductivity studies of OMCs.
a, b Electronic conductivity of OMCs arranged according to the electron-donating ability of organic ligands and electronegativity of metal ions, respectively; c Band gap dependent conductivity of OMCs (Error bar, mean±s.d.); d Optical photograph of 25 nm thick Cu(SPh-OH) inbetween Cr/Au electrodes and its temperature-dependent I–V curves; e Variable temperature conductive measurements of Cu(SPh-OH) in d; σ-T−1 plot between 110 and 440 K (left); the solid line is the fitting curve based on double activation energies equation; σ-T−1/4 between 40 and 100 K (right); the solid line is the fitting curve based on Mott variable-range hopping model.