| Literature DB >> 26273052 |
Jimin Kim1, Seung Su Baik2, Sae Hee Ryu3, Yeongsup Sohn3, Soohyung Park4, Byeong-Gyu Park5, Jonathan Denlinger6, Yeonjin Yi4, Hyoung Joon Choi2, Keun Su Kim7.
Abstract
Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable band gap in few-layer black phosphorus doped with potassium using an in situ surface doping technique. Through band structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the band gap, owing to the giant Stark effect, and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices.Entities:
Year: 2015 PMID: 26273052 DOI: 10.1126/science.aaa6486
Source DB: PubMed Journal: Science ISSN: 0036-8075 Impact factor: 47.728