Literature DB >> 25510534

Band engineering for novel two-dimensional atomic layers.

Qingsheng Zeng1, Hong Wang, Wei Fu, Yongji Gong, Wu Zhou, Pulickel M Ajayan, Jun Lou, Zheng Liu.   

Abstract

The discovery of graphene has sparked much interest in science and lead to the development of an ample variety of novel two-dimensional (2D) materials. With increasing research interest in the field of 2D materials in recent years, the researchers have shifted their focus from the synthesis to the modification of 2D materials, emphasizing their electronic structures. In this review, the possibilities of altering the band structures are discussed via three different approches: (1) alloying 2D materials, so called ternary 2D materials, such as hexagonal carbonized boron nitrides (h-BCN) and transition metal dichalcogenides (TMDs) ternary materials; (2) stacking 2D materials vertically, which results in 2D heterostructures named van der Waals (vdW) solids (using hexagonal boron nitrides (h-BN)/graphene and TMDs stacking as examples), and growing lateral TMDs heterostructrues; (3) controlling the thickness of 2D materials, that is, the number of layers. The electronic properties of some 2D materials are very sensitive to the thickness, such as in TMDs and black phosphorus (BP). The variations of band structures and the resulting physical properties are systematically discussed.
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  band engineering; heterostructures; ternary; thickness dependency; two-dimensional materials

Year:  2014        PMID: 25510534     DOI: 10.1002/smll.201402380

Source DB:  PubMed          Journal:  Small        ISSN: 1613-6810            Impact factor:   13.281


  6 in total

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Authors:  Wenwen Yao; Zhilin Kang; Jiajun Deng; Yan Chen; Qian Song; Xun Lei Ding; Fangchao Lu; Wenjie Wang
Journal:  RSC Adv       Date:  2020-11-20       Impact factor: 4.036

2.  Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors.

Authors:  Masoud Mahjouri-Samani; Ming-Wei Lin; Kai Wang; Andrew R Lupini; Jaekwang Lee; Leonardo Basile; Abdelaziz Boulesbaa; Christopher M Rouleau; Alexander A Puretzky; Ilia N Ivanov; Kai Xiao; Mina Yoon; David B Geohegan
Journal:  Nat Commun       Date:  2015-07-22       Impact factor: 14.919

3.  Coordination assembly of 2D ordered organic metal chalcogenides with widely tunable electronic band gaps.

Authors:  Yanzhou Li; Xiaoming Jiang; Zhihua Fu; Qingqing Huang; Guan-E Wang; Wei-Hua Deng; Chen Wang; Zhenzhu Li; Wanjian Yin; Banglin Chen; Gang Xu
Journal:  Nat Commun       Date:  2020-01-14       Impact factor: 14.919

4.  Adsorption performance of M-doped (M = Ti and Cr) gallium nitride nanosheets towards SO2 and NO2: a DFT-D calculation.

Authors:  Hossein Roohi; Nastaran Askari Ardehjani
Journal:  RSC Adv       Date:  2020-07-24       Impact factor: 4.036

5.  Visualizing band offsets and edge states in bilayer-monolayer transition metal dichalcogenides lateral heterojunction.

Authors:  Chendong Zhang; Yuxuan Chen; Jing-Kai Huang; Xianxin Wu; Lain-Jong Li; Wang Yao; Jerry Tersoff; Chih-Kang Shih
Journal:  Nat Commun       Date:  2016-01-18       Impact factor: 14.919

6.  Growth of Graphene/h-BN Heterostructures on Recyclable Pt Foils by One-Batch Chemical Vapor Deposition.

Authors:  Yongteng Qian; Huynh Van Ngoc; Dae Joon Kang
Journal:  Sci Rep       Date:  2017-12-06       Impact factor: 4.379

  6 in total

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