Literature DB >> 31053618

Quantum parity Hall effect in Bernal-stacked trilayer graphene.

Petr Stepanov1, Yafis Barlas2, Shi Che1, Kevin Myhro3, Greyson Voigt3, Ziqi Pi3, Kenji Watanabe4, Takashi Taniguchi4, Dmitry Smirnov5, Fan Zhang6, Roger K Lake7, Allan H MacDonald8, Chun Ning Lau9.   

Abstract

The quantum Hall effect has recently been generalized from transport of conserved charges to include transport of other approximately conserved-state variables, including spin and valley, via spin- or valley-polarized boundary states with different chiralities. Here, we report a class of quantum Hall effect in Bernal- or ABA-stacked trilayer graphene (TLG), the quantum parity Hall (QPH) effect, in which boundary channels are distinguished by even or odd parity under the system's mirror reflection symmetry. At the charge neutrality point, the longitudinal conductance [Formula: see text] is first quantized to [Formula: see text] at a small perpendicular magnetic field [Formula: see text], establishing the presence of four edge channels. As [Formula: see text] increases, [Formula: see text] first decreases to [Formula: see text], indicating spin-polarized counterpropagating edge states, and then, to approximately zero. These behaviors arise from level crossings between even- and odd-parity bulk Landau levels driven by exchange interactions with the underlying Fermi sea, which favor an ordinary insulator ground state in the strong [Formula: see text] limit and a spin-polarized state at intermediate fields. The transitions between spin-polarized and -unpolarized states can be tuned by varying Zeeman energy. Our findings demonstrate a topological phase that is protected by a gate-controllable symmetry and sensitive to Coulomb interactions.

Entities:  

Keywords:  2D materials; quantum Hall effect; symmetry-protected phases; topological insulators; trilayer graphene

Year:  2019        PMID: 31053618      PMCID: PMC6534981          DOI: 10.1073/pnas.1820835116

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   11.205


  18 in total

1.  Two-dimensional topological insulator state and topological phase transition in bilayer graphene.

Authors:  Zhenhua Qiao; Wang-Kong Tse; Hua Jiang; Yugui Yao; Qian Niu
Journal:  Phys Rev Lett       Date:  2011-12-14       Impact factor: 9.161

2.  Optical self-energy in graphene due to correlations.

Authors:  J Hwang; J P F LeBlanc; J P Carbotte
Journal:  J Phys Condens Matter       Date:  2012-05-18       Impact factor: 2.333

3.  Effect of magnetic field on the electronic transport in trilayer graphene.

Authors:  Yanping Liu; Sarjoosing Goolaup; Chandrasekhar Murapaka; Wen Siang Lew; Seng Kai Wong
Journal:  ACS Nano       Date:  2010-11-03       Impact factor: 15.881

4.  Boron nitride substrates for high-quality graphene electronics.

Authors:  C R Dean; A F Young; I Meric; C Lee; L Wang; S Sorgenfrei; K Watanabe; T Taniguchi; P Kim; K L Shepard; J Hone
Journal:  Nat Nanotechnol       Date:  2010-08-22       Impact factor: 39.213

5.  Many-body interactions in quasi-freestanding graphene.

Authors:  David A Siegel; Cheol-Hwan Park; Choongyu Hwang; Jack Deslippe; Alexei V Fedorov; Steven G Louie; Alessandra Lanzara
Journal:  Proc Natl Acad Sci U S A       Date:  2011-06-27       Impact factor: 11.205

6.  Magnetoconductance oscillations and evidence for fractional quantum Hall states in suspended bilayer and trilayer graphene.

Authors:  Wenzhong Bao; Zeng Zhao; Hang Zhang; Gang Liu; Philip Kratz; Lei Jing; Jairo Velasco; Dmitry Smirnov; Chun Ning Lau
Journal:  Phys Rev Lett       Date:  2010-12-06       Impact factor: 9.161

7.  Spontaneous quantum Hall states in chirally stacked few-layer graphene systems.

Authors:  Fan Zhang; Jeil Jung; Gregory A Fiete; Qian Niu; Allan H MacDonald
Journal:  Phys Rev Lett       Date:  2011-04-11       Impact factor: 9.161

8.  Raman characterization of ABA- and ABC-stacked trilayer graphene.

Authors:  Chunxiao Cong; Ting Yu; Kentaro Sato; Jingzhi Shang; Riichiro Saito; Gene F Dresselhaus; Mildred S Dresselhaus
Journal:  ACS Nano       Date:  2011-10-11       Impact factor: 15.881

9.  Trilayer graphene is a semimetal with a gate-tunable band overlap.

Authors:  M F Craciun; S Russo; M Yamamoto; J B Oostinga; A F Morpurgo; S Tarucha
Journal:  Nat Nanotechnol       Date:  2009-04-26       Impact factor: 39.213

10.  Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric fields.

Authors:  K Zou; Fan Zhang; C Clapp; A H MacDonald; J Zhu
Journal:  Nano Lett       Date:  2013-01-30       Impact factor: 11.189

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