Literature DB >> 21962035

Raman characterization of ABA- and ABC-stacked trilayer graphene.

Chunxiao Cong1, Ting Yu, Kentaro Sato, Jingzhi Shang, Riichiro Saito, Gene F Dresselhaus, Mildred S Dresselhaus.   

Abstract

Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron-phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G' mode, respectively.
© 2011 American Chemical Society

Entities:  

Year:  2011        PMID: 21962035     DOI: 10.1021/nn203472f

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  15 in total

1.  Electric field control of soliton motion and stacking in trilayer graphene.

Authors:  Matthew Yankowitz; Joel I-Jan Wang; A Glen Birdwell; Yu-An Chen; K Watanabe; T Taniguchi; Philippe Jacquod; Pablo San-Jose; Pablo Jarillo-Herrero; Brian J LeRoy
Journal:  Nat Mater       Date:  2014-04-28       Impact factor: 43.841

2.  Quantum parity Hall effect in Bernal-stacked trilayer graphene.

Authors:  Petr Stepanov; Yafis Barlas; Shi Che; Kevin Myhro; Greyson Voigt; Ziqi Pi; Kenji Watanabe; Takashi Taniguchi; Dmitry Smirnov; Fan Zhang; Roger K Lake; Allan H MacDonald; Chun Ning Lau
Journal:  Proc Natl Acad Sci U S A       Date:  2019-05-03       Impact factor: 11.205

3.  Ion transport through a graphene nanopore.

Authors:  Guohui Hu; Mao Mao; Sandip Ghosal
Journal:  Nanotechnology       Date:  2012-09-07       Impact factor: 3.874

4.  Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties.

Authors:  Christos Melios; Vishal Panchal; Cristina E Giusca; Włodek Strupiński; S Ravi P Silva; Olga Kazakova
Journal:  Sci Rep       Date:  2015-06-01       Impact factor: 4.379

5.  Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials--A general bond polarizability model.

Authors:  Xin Luo; Xin Lu; Chunxiao Cong; Ting Yu; Qihua Xiong; Su Ying Quek
Journal:  Sci Rep       Date:  2015-10-15       Impact factor: 4.379

6.  Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe₂.

Authors:  Parviz Hajiyev; Chunxiao Cong; Caiyu Qiu; Ting Yu
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

7.  Visualization of arrangements of carbon atoms in graphene layers by Raman mapping and atomic-resolution TEM.

Authors:  Chunxiao Cong; Kun Li; Xi Xiang Zhang; Ting Yu
Journal:  Sci Rep       Date:  2013-02-01       Impact factor: 4.379

8.  Deformation of wrinkled graphene.

Authors:  Zheling Li; Ian A Kinloch; Robert J Young; Kostya S Novoselov; George Anagnostopoulos; John Parthenios; Costas Galiotis; Konstantinos Papagelis; Ching-Yu Lu; Liam Britnell
Journal:  ACS Nano       Date:  2015-03-20       Impact factor: 15.881

9.  Reversible loss of Bernal stacking during the deformation of few-layer graphene in nanocomposites.

Authors:  Lei Gong; Robert J Young; Ian A Kinloch; Sarah J Haigh; Jamie H Warner; Jonathan A Hinks; Ziwei Xu; Li Li; Feng Ding; Ibtsam Riaz; Rashid Jalil; Kostya S Novoselov
Journal:  ACS Nano       Date:  2013-08-05       Impact factor: 15.881

10.  Flower-shaped domains and wrinkles in trilayer epitaxial graphene on silicon carbide.

Authors:  B Lalmi; J C Girard; E Pallecchi; M Silly; C David; S Latil; F Sirotti; A Ouerghi
Journal:  Sci Rep       Date:  2014-02-11       Impact factor: 4.379

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.