| Literature DB >> 30155082 |
Xuejun Zhan1, Zhongbin Wu2, Yuxuan Lin1, Yujun Xie1, Qian Peng3, Qianqian Li1, Dongge Ma2, Zhen Li1.
Abstract
Great efforts have been devoted to explore efficient fluorescent materials, especially deep-blue luminogens, for organic light emitting diodes (OLEDs). In this paper, according to the design idea of creating luminogens with the characteristic of aggregation induced emission (AIE), four new benzene-cored luminogens with very simple structure have been intelligently designed, in which, without an additional hole-transporting layer (such as NPB), 3TPA-CN exhibited deep-blue emission and high performance in a simple nondoped LED device with a current efficiency (CE) of 5.21 cd A-1, external quantum efficiency (EQE) of 3.89%, and CIE coordinates of (0.15, 0.14). Excitingly, as a wonderful side-effect, 3TPA-CN can serve as an excellent host for orange emissive phosphorescent OLEDs (PhOLEDs), with a maximum current and power efficiency of 57.4 cd A-1 and 52.0 lm W-1, respectively, and a corresponding maximum EQE of 18.2%, higher than that of CBP (15.7%), one popular host for orange PhOLEDs, under the same conditions, thus broadening the utilization of AIEgens as host in PhOLEDs.Entities:
Year: 2016 PMID: 30155082 PMCID: PMC6014113 DOI: 10.1039/c6sc00559d
Source DB: PubMed Journal: Chem Sci ISSN: 2041-6520 Impact factor: 9.825
Scheme 1Chemical structures of the synthesized luminogens.
Fig. 1TGA curves recorded under N2 at a heating rate of 10 °C min–1.
The thermal, electrochemical and photophysical data of the luminogens
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| Soln | Film | Soln | Soln | Powder, % | ||||||
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| 377 | — | 3.08 | –5.27 | –2.19 | 448 | 433 | 354 | 82.6 | 19.9 |
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| 420 | 126 | 2.94 | –5.26 | –2.32 | 467 | 465 | 365 | 53.9 | 30.2 |
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| 476 | — | 3.21 | –5.59 | –2.38 | 479 | 485 | 327 | 27.8 | 58.0 |
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| 480 | 156 | 3.10 | –5.58 | –2.48 | 486 | 495 | 331 | 29.5 | 61.3 |
5% weight loss temperature measured by TGA under N2.
Glass-transition temperature measured by DSC under N2.
Band gap estimated from optical absorption band edge of the solution.
Calculated from the onset oxidation potentials of the compounds.
Estimated using empirical equations ELUMO = EHOMO + Eg.
Determined in THF solution (2TPA-CN and 3TPA-CN) and THF/H2O (5 : 95) (2TPE-CN and 3TPE-CN), respectively.
On glass.
Observed from absorption spectra in dilute THF solution, 10 μM.
Fig. 2UV-vis (A) and PL (B) spectra of the four emitters in THF solutions.
Fig. 3(A) PL spectra of 3TPE-CN in THF/H2O mixtures with different water fractions (fw). (B) Plots of fluorescence quantum yields determined in THF/H2O solutions using 9,10-diphenylanthracene (Φ = 90% in cyclohexane) as standard versus water fractions. Inset in (B): photos of 3TPE-CN in THF/water mixtures (fw = 0 and 99%) taken under the illumination of a 365 nm UV lamp. UV-vis (A) and PL (B) spectra of the four emitters in THF solutions.
Fig. 4Calculated molecular orbital amplitude plots of HOMO and LUMO levels and optimized molecular structures.
Fig. 5Energy level diagram of the single carrier device (A), traditional non-doped device (B) and device with simple structure (C).35–38
Fig. 6Current density–voltage characteristics of hole-only devices of the four luminogens.
Fig. 7(A) Current density–voltage–luminance characteristics and (B) current efficiency–luminance characteristics of non-doped devices.
EL performances of 2TPA-CN , 3TPA-CN, 2TPE-CN and 3TPE-CN
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| A | 445 | 6.0 | 2176 | 0.42 | 0.88 | 0.66 | 0.15, 0.10 |
| B | 466 | 4.4 | 7719 | 2.20 | 3.34 | 2.34 | 0.16, 0.16 |
| C | 505 | 6.6 | 4279 | 1.13 | 2.82 | 1.07 | 0.21, 0.41 |
| D | 499 | 4.0 | 10 666 | 5.51 | 8.03 | 3.06 | 0.20, 0.40 |
| E | 461 | 3.0 | 12 363 | 5.06 | 5.21 | 3.89 | 0.15, 0.14 |
| F | 470 | 3.6 | 7257 | 5.02 | 5.04 | 3.35 | 0.15, 0.17 |
| G | 471 | 3.6 | 5906 | 5.06 | 5.07 | 3.27 | 0.14, 0.17 |
| H | 470 | 3.6 | 9345 | 4.52 | 4.57 | 2.63 | 0.15, 0.19 |
| I | 564 | 2.8 | 48 434 | 52.0 | 57.4 | 18.2 | 0.50, 0.50 |
| J | 562 | 3.2 | 47 567 | 41.7 | 50.6 | 15.7 | 0.49, 0.51 |
Compound and device pairings are as follows: 2TPA-CN (A) , 3TPA-CN (B, E–I), 2TPE-CN (C) and 3TPE-CN (D).
Device configuration: ITO/MoO3 (10 nm)/X/TPBi (30 nm)/LiF (1 nm)/Al. For device A–D: X = NPB (60 nm)/mCP (15 nm)/emitter (30 nm). For device E: X = 3TPA-CN (70 nm). For device F–H: X = NPB (60 nm)/mCP (10 nm)/BmPyPb:x% 3TPA-CN (20 nm)/BmPyPb (10 nm), x = 30% (F), 40% (G) and 50% (H). For device I–J: X = NPB (60 nm)/mCP (10 nm)/host:PO-01 (20 nm, 10 wt%), host = 3TPA-CN (I) and CBP (J).
Abbreviations: Von = turn-on voltage at 1 cd m–2, Lmax = maximum luminance, ηP,max, ηC,max and ηext,max = maximum power, current and external efficiencies, respectively. CIE = Commission International de l'Éclairage coordinates at 8 V.
Fig. 8(A) Current efficiency–luminance characteristics and (B) EL spectra of the device with a simple structure.
Fig. 9Energy level diagram of the doped devices (A: 3TPA-CN as the guest, B: 3TPA-CN as the host).
Fig. 10(A) Change in current efficiency with the luminance in doped devices of 3TPA-CN with different doping concentrations (30%, 40% and 50%). Device configurations: ITO/MoO3 (10 nm)/NPB (60 nm)/mCP (10 nm)/BmPyPb:x% 3TPA-CN (20 nm)/BmPyPb (10 nm)/TPBi (35 nm)/LiF (1 nm)/Al. All values are reported in wt% of 3TPA-CN in BmPyPb. (B) Current efficiency–luminance characteristics, (C) external quantum efficiency–luminance characteristics and (D) EL spectra of the device with PO-01 as the guest. Device configurations: ITO/MoO3/NPB (60 nm)/mCP (10 nm)/3TPA-CN:PO-01 (20 nm, 10 wt%)/TPBI (40 nm)/LiF (1 nm)/Al.