| Literature DB >> 32190835 |
Xuejun Zhan1, Zhongbin Wu2, Yanbin Gong1, Jin Tu1, Yujun Xie3, Qian Peng4, Dongge Ma5, Qianqian Li1, Zhen Li1,3.
Abstract
For the first time, electroplex emission is utilized to enhance the performance of nondoped blue organic light-emitting diodes (OLEDs). By decorating the twisted blue-emitting platform and adjusting the electronic structure, three molecules of 3Cz-Ph-CN, 3Cz-mPh-CN, and 3Ph-Cz-CN with a donor-acceptor structure are synthesized and investigated. When external voltage is applied, electroplex emission, which contributes to the emission performance of OLED, can be realized at the interface between the emitting layer and the electron-transporting layer. Accordingly, high external quantum efficiency of 18.1% can be achieved, while the emission wavelength of the device can be controlled in the blue region. Our results provide the possibility to enhance the performance of OLED through electroplex emission, in addition to the generally investigated thermally activated delayed fluorescence (TADF). Excitedly, when 3Ph-Cz-CN is used as host material in orange-emitting phosphorous OLEDs (PO-01 as the dopant), unprecedented high external quantum efficiency of 27.4% can also be achieved.Entities:
Year: 2020 PMID: 32190835 PMCID: PMC7063226 DOI: 10.34133/2020/8649102
Source DB: PubMed Journal: Research (Wash D C) ISSN: 2639-5274
Scheme 1Schematic description of the route to utilize exciplex/electroplex emission in blue OLED.
Figure 1Chemical structures, molecular orbital amplitude plots, and theoretical energy levels of (a) 3Cz-Ph-CN, (b) 3Cz-mPh-CN, and (c) 3Ph-Cz-CN calculated by B3LYP/6-31G (d, p).
Figure 2(a) UV-vis spectra and PL spectra of 3Cz-Ph-CN, 3Cz-mPh-CN, and 3Ph-Cz-CN in THF solutions (10 μM, dotted lines represent the PL spectra of films). (b) Mechanoluminescence spectrum of 3Ph-Cz-CN (inset is the ML image in the dark).
Thermal, electrochemical, and photophysical data of the luminogens.
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| solvf (nm) | filmg (nm) | solvf (nm) | solvf (%) | solvh (ns) | filmg (ns) | |
| 3Cz-Ph-CN | 550 | 165 | 3.21 | -5.59 | -2.38 | 441 | 435 | 340 | 90.1 | 3.88 | 4.79 |
| 3Cz-mPh-CN | 504 | 121 | 3.48 | -5.58 | -2.10 | 451 | 428 | 324 | 7.7 | 2.83 | 25.03 |
| 3Ph-Cz-CN | 519 | 141 | 3.25 | -5.62 | -2.37 | 406 | 420 | 332 | 65.9 | 2.35 | 3.36 |
a5% weight loss temperature measured by TGA under N2. bGlass transition temperature measured by DSC under N2. cBand gap estimated from optical absorption band edge of the solution. dCalculated from the onset oxidation potentials of the compounds. eEstimated using empirical equations ELUMO = EHOMO + Eg. fDetermined in THF solution. gOn glass. hObserved from absorption spectra in dilute THF solution, 10 μM.
Figure 3Emission decay characteristics of the three luminogens (film and solution states) at room temperature.
Figure 4(a) Device structures and (b) current density-voltage profiles of hole-only devices based on the three luminogens.
Figure 5(a) Chemical structures of mCP and TPBi. (b) Energy level of nondoped devices with electroplex emission. Device configurations: ITO/MoO3 (10 nm)/NPB (60 nm)/mCP (15 nm)/EML (30 nm)/TPBi (30 nm)/LiF (1 nm)/Al. (c) External quantum efficiency-luminance characteristics of the nondoped devices. (d) EL spectra of 3Cz-Ph-CN and 3Cz-mPh-CN. (e) EL spectra of 3Ph-Cz-CN at different voltages (inset is the picture of device C at the voltage of 12 V). (f) PL spectrum of the blend film (inset is the description of CIE in the nondoped device C).
EL performances of 3Cz-Ph-CN (A/D/G), 3Cz-mPh-CN (B/E/H), and 3Ph-Cz-CN (C/F/I)a.
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| A | 439 | 4.2 | 5304 | 1.37 | 2.24 | 2.45 | 0.16, 0.10 |
| B | 421 | 6.8 | 3057 | 0.45 | 1.09 | 1.14 | 0.16, 0.12 |
| C | 414 (506) | 2.8 | 6651 | 24.9 | 23.8 | 18.1 | 0.17, 0.16 |
| D | 434 | 3.8 | 4518 | 1.32 | 1.76 | 2.94 | 0.16, 0.06 |
| E | 429 | 5.4 | 1153 | 0.19 | 0.50 | 0.58 | 0.19, 0.12 |
| F | 420 | 3.2 | 3209 | 1.06 | 1.15 | 1.96 | 0.19, 0.12 |
| G | 562 | 3.4 | 46154 | 59.7 | 80.6 | 26.1 | 0.49, 0.50 |
| H | 564 | 3.8 | 46401 | 56.6 | 77.2 | 25.1 | 0.49, 0.50 |
| I | 562 | 2.8 | 47952 | 84.5 | 84.6 | 27.4 | 0.49, 0.51 |
| Jc | 564 | 2.8 | 48434 | 52.0 | 57.4 | 18.2 | 0.50, 0.50 [ |
| K | 562 | 3.2 | 47567 | 41.7 | 50.6 | 15.7 | 0.49, 0.51 [ |
| L | — | 2.8 | — | 64.5 | — | 24.5 | 0.51, 0.49 [ |
| M | — | 2.4 | — | 62.1 | — | 25.0 | 0.49, 0.49 [ |
aDevice configuration: ITO/MoO3 (10 nm)/X/LiF (1 nm)/Al. For devices A-C: X = NPB (60 nm)/mCP (15 nm)/emitter (30 nm)/TPBi (30 nm). For devices D-F: X = emitter (60 nm)/TPBi (30 nm). For devices G-I: X = NPB (60 nm)/mCP (10 nm)/emitter:PO-01 (20 nm, 10 wt%)/Bphen (40 nm). bAbbreviations: Von = turn-on voltage at 1 cd m−2; Lmax = maximum luminance; ηp,max, ηc,max, and ηext,max = maximum power, current, and external quantum efficiencies, respectively; CIE = Commission International de l'Éclairage coordinates. cDevices J-M: literature results for comparison.
Figure 6(a) Energy level of doped devices. (b) Current density-voltage-luminance characteristics and (c) change in external quantum efficiency with the luminance in the doped devices. (d) EL spectrum of 3Ph-Cz-CN at different voltages in device I (inset is the picture of device I at the voltage of 8 V). Device configurations: ITO/MoO3 (10 nm)/NPB (60 nm)/mCP (10 nm)/X:PO-01 (20 nm, 10 wt%)/Bphen (40 nm)/LiF (1 nm)/Al.