| Literature DB >> 29584638 |
Corrado Napoli1, Stefano Lai2, Ambra Giannetti3, Sara Tombelli4, Francesco Baldini5, Massimo Barbaro6, Annalisa Bonfiglio7.
Abstract
In this paper, the electronic transduction of DNA hybridization is presented by coupling organic charge-modulated field-effect transistors (OCMFETs) and hairpin-shaped probes. These probes have shown interesting properties in terms of sensitivity and selectivity in other kinds of assays, in the form of molecular beacons (MBs). Their integration with organic-transistor based sensors, never explored before, paves the way to a new class of low-cost, easy-to-use, and portable genetic sensors with enhanced performances. Thanks to the peculiar characteristics of the employed sensor, measurements can be performed at relatively high ionic strengths, thus optimizing the probes' functionality without affecting the detection ability of the device. A complete electrical characterization of the sensor is reported, including calibration with different target concentrations in the measurement environment and selectivity evaluation. In particular, DNA hybridization detection for target concentration as low as 100 pM is demonstrated.Entities:
Keywords: DNA hybridization detection; electronic sensors; hairpin-shaped oligonucleotides; organic field-effect transistors
Year: 2018 PMID: 29584638 PMCID: PMC5948917 DOI: 10.3390/s18040990
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1(a) Schematic representation of the hairpin probe working principle in the study of its anchoring and functionality. Fluorescence microscopy image of the transistor sensing area before (b) and after (c) probe immobilization. The fluorescence signal increases after the introduction in solution of fully-complementary ssDNA (d).
Figure 2(a) Pictorial representation of the sensor’s cross-section. Floating-gate electrodes were fabricated in aluminum and patterned by means of photolithography. A hybrid-dielectric made of a thermally-growth Al2O3 layer and a Parylene C film allows low voltage device operation. Control-gate, source, and drain electrodes and the sensing area are made of gold and patterned by means of photolithography; (b) Picture of the device fabricated as described in materials and methods section. The insets show a magnification of the channel area.
Figure 3(a) Output current of a sensor after the addition of 10 nM (red curve), 1 nM (green curve), 100 pM (blue curve), 10 pM (purple curve) of FC-ssDNA and of the sole TRIS buffer solution without the FC-ssDNA (black curve). (b) Output current variation of the sensor, normalized with respect to their baseline current, as a function of target ssDNA concentration (FC-ssDNA, black square and NC-ssDNA, red square). The inset reports the output current variation as a function of the FC-ssDNA in a linear scale.