Nelson Y Dzade1, Nora H de Leeuw1,2. 1. Department of Earth Sciences, Utrecht University, Princetonplein 9, 3584 CC Utrecht, The Netherlands. 2. School of Chemistry, Cardiff University, Main Building, Park Place, CF10 3AT Cardiff, United Kingdom.
Abstract
Layered transition-metal chalcogenides have emerged as a fascinating new class of materials for catalysis. Here, we present periodic density functional theory (DFT) calculations of the adsorption of thiophene and the direct desulfurization reaction pathways on the (001), (011), and (111) surfaces of layered FeS. The fundamental aspects of the thiophene adsorption, including the initial adsorption geometries, adsorption energies, structural parameters, and electronic properties, are presented. From the calculated adsorption energies, we show that the flat adsorption geometries, wherein the thiophene molecule forms multiple π-bonds with the FeS surfaces, are energetically more favorable than the upright adsorption geometries, with the strength of adsorption decreasing in the order FeS(111) > FeS(011) > FeS(001). The adsorption of the thiophene onto the reactive (011) and (111) surfaces is shown to be characterized by charge transfer from the interacting Fe d-band to the π-system of the thiophene molecule, which causes changes of the intramolecular structure including loss of aromaticity and elongation of the C-S bonds. The thermodynamic and kinetic analysis of the elementary steps involved in the direct desulfurization of thiophene on the reactive FeS surfaces is also presented. Direct desulfurization of thiophene occurs preferentially on the (111) surface, as reflected by the overall exothermic reaction energy calculated for the process (ER = -0.15 eV), with an activation energy of 1.58 eV.
Layered transition-metal chalcogenides have emerged as a fascinating new class of materials for catalysis. Here, we present periodic density functional theory (DFT) calculations of the adsorption of thiophene and the direct desulfurization reaction pathways on the (001), (011), and (111) surfaces of layered FeS. The fundamental aspects of the thiophene adsorption, including the initial adsorption geometries, adsorption energies, structural parameters, and electronic properties, are presented. From the calculated adsorption energies, we show that the flat adsorption geometries, wherein the thiophene molecule forms multiple π-bonds with the FeS surfaces, are energetically more favorable than the upright adsorption geometries, with the strength of adsorption decreasing in the order FeS(111) > FeS(011) > FeS(001). The adsorption of the thiophene onto the reactive (011) and (111) surfaces is shown to be characterized by charge transfer from the interacting Fe d-band to the π-system of the thiophene molecule, which causes changes of the intramolecular structure including loss of aromaticity and elongation of the C-S bonds. The thermodynamic and kinetic analysis of the elementary steps involved in the direct desulfurization of thiophene on the reactive FeS surfaces is also presented. Direct desulfurization of thiophene occurs preferentially on the (111) surface, as reflected by the overall exothermic reaction energy calculated for the process (ER = -0.15 eV), with an activation energy of 1.58 eV.
Direct
desulfurisation (DDS) or catalytic hydrodesulfurization (HDS) of sulfur-containing
organic molecules from petroleum is of considerable technological
and fundamental interest because of increasingly stringent global
environmental regulations on the maximum sulfur level in fuel.[1−4] Natural petroleum contains different organosulfur compounds, where
aromatic species like thiophene (C4H4S) are
the least reactive, which makes them common impurities in transportation
fuels.[5] The HDS process consists of the
reaction of the sulfur-containing compound with hydrogen to form hydrocarbons
and H2S.[6−8] The key step of the desulfurization process is the
C–S bond cleavage, but it is not well-understood.[9] Gaining an improved understanding of the catalytic
desulfurization process relies heavily on knowledge about the initial
adsorption geometry, the nature of the active sites, and a model mechanism
for the C–S bond dissociation process.[9,10] As
a reaction model of desulfurization, the adsorption and reaction of
thiophene on various transition-metal surfaces has been studied to
help understand the catalytic desulfurization mechanism and for testing
the reactivity of aromatic compounds.[10−15]The most widely used catalysts for HDS are based on the layered
transition-metal chalcogenides, usually a combination of Mo and W
sulfides with Co and Ni.[16−20] Layered transition-metal sulfides have attracted particular attention
because they possess high specific reactive surface areas, which is
ideal for catalysis.[21,22] Molybdenum disulfide (MoS2) and tungsten disulfide (WS2), for instance, operate
in almost every refinery in the world today to upgrade fuels by removing
contaminants, as well as increase the hydrogen content of the feedstock
through hydrogenation of aromatic molecules.[23] The adsorption of thiophene on the catalytically active surfaces
of MoS2 has been studied using ab initio DFT calculations,[5,17] whereas the hydrogenation and direct desulfurization reaction pathways
in thiophene hydrodesulfurization over an MoS2 catalyst
at realistic conditions have also been reported.[16] These studies have shown that the adsorption of thiophene
at the Mo edge site leads to strong chemisorption of the thiophene
molecule and a disruption of the aromatic ring. Recently, the reaction
mechanism of thiophene hydrodesulfurization over the ReS2(001) surface under typical HDS reaction conditions was investigated
using density functional theory calculations.[24] The adsorption kinetics of thiophene on WS2 nanoparticles
with fullerene-like (onion-like) structures has been studied under
ultrahigh vacuum conditions by sample temperature ramping techniques.[25] It was shown that at low temperatures, the thiophene
adsorbs molecularly, whereas the formation of H2S and alkanes
was observed at higher temperatures on the reduced and oxidized WS2 nanoparticles.[25] The reactivity
of thiophene has also been characterized on clean multiwall WS2 nanotubes (INT-WS2), as well as on Ni- and Co-coated
INT-WS2 using an ambient pressure flow reactor and ultrahigh
vacuum kinetics techniques.[26]Despite
the efficiency of MoS2, WS2, ReS2, CoMoS, and NiMoS catalysts, the use of these materials is reported
to generally result in a reduction of the octane rating due to the
saturation of olefins, and to lower-quality fuels and high consumption
of hydrogen,[27,28] which motivates the development
of cost-efficient and more active catalysts. Recently, layered iron(II)
sulfide (mackinawite) has begun to attract significant attention for
environmental remediation applications because of its ubiquity in
nature, low price, interesting electronic properties, and prominent
catalytic features.[29−32] FeS crystallizes in the tetragonal structure with space group P4/nmm (Figure a), with lattice parameters a = b = 3.674 Å and c = 5.033
Å and c/a ratio = 1.370 Å.[33−35] Like MoS2 and WS2, the FeS structure is formed
by vertically stacked two-dimensional layers with strong covalent
bonding between the Fe and S atoms within a given layer and very weak
van der Waals bonding between the adjacent layers.[33] Each iron atom is arranged in square-planar coordination
with neighboring irons, and the sulfur atoms are in an asymmetric
one-sided 4-fold coordination with iron.[34]
Figure 1
Layered structure of mackinawite, with the tetragonal unit cell highlighted
by continuous lines. (Color scheme: Fe, gray; S, yellow.)
Layered structure of mackinawite, with the tetragonal unit cell highlighted
by continuous lines. (Color scheme: Fe, gray; S, yellow.)FeS nanoparticles can be synthesized relatively
easily,[36−39] which makes the material a promising candidate for environmental
catalytic applications. Owing to its unique structure and surface
chemical properties, FeS particles have been applied extensively in
the treatment of groundwater and soil contaminated by arsenic[40−42] and heavy metals such as mercury[43,44] and chromium.[45,46] FeS along with greigite (Fe3S4), which has
an inverse spinel crystal structure, are also increasingly considered
to be the early catalysts for a series of biochemical reactions leading
to the emergence of life.[30,47−49] The low-index surfaces of FeS exhibit strong reactivity toward greenhouse
gases such as carbon dioxide (CO2)[31] and nitrogen oxides (NO).[32] Interestingly, the chemical reactivity of FeS
toward the adsorption and desulfurization mechanisms of organosulfur
compounds has not been investigated until now. In the present study,
we have used dispersion-corrected density functional theory (DFT-D2)
calculations to carry out a detailed computational investigation of
the structural and electronic properties of thiophene adsorption complexes
on the low-index (001), (011), and (111) surfaces of FeS, followed
by the investigation of the catalytic properties of the reactive (011)
and (111) surfaces toward the direct desulfurization of the adsorbed
thiophene. The adsorption of thiophene represents the first step in
the catalytic cycle of desulfurization, which in many cases involves
weakening of the C–S bond. Insight into the bonding mechanisms
of thiophene at the FeS surfaces is provided through analysis of projected
density of states and differential charge density iso-surface contours.
Computational Details
The optimized structures were
determined using plane-wave density functional theory (PW-DFT) calculations
within the Vienna Ab-initio Simulation Package (VASP code).[50,51] The interactions between the valence electrons and the ionic core
were described with the projected augmented wave (PAW) method,[52,53] and the electronic exchange-correlation was treated using the generalized
gradient approximation (GGA) with the Perdew–Wang (PW91) functional.[54] The PW91 functional was used in this study to
remain consistent with previous work and to ensure that direct comparison
could be made with our earlier studies. However, we have carried out
a number of test calculations using the PBE functional, as mentioned
in the text where relevant, but found that PW91 leads to only marginal
overbinding of the thiophene molecule to the FeS surfaces compared
to PBE, and by an almost constant energy difference. Dispersion interactions,
which are essential for the accurate description of the interlayer
interactions in FeS[32] and the thiophene–FeS
interactions, were accounted for through the Grimme DFT-D2 functional.[55] An energy cutoff of 400 eV was used for the
expansion of the plane-wave basis set, which ensured convergence of
the total energy of the FeS and the adsorbate–substrate systems
to within 10–6 eV. Geometry optimizations were performed
using the conjugate gradient minimization algorithm until the magnitude
of the residual Hellman–Feynman force on each relaxed atom
was ≤0.03 eV/Å. A Monkhorst–Pack[56] K-point grid of 11 × 11 × 11 and 5 × 5 ×
1 was used to sample the Brillouin-zone of bulk FeS and the thiophene–surface
system, respectively. By performing full geometry optimizations, we obtained FeS unit cell
parameters a = 3.587 Å, c =
4.908 Å, and c/a = 1.368 Å, which all compare closely with earlier theoretical results[57−60] and those measured experimentally.[33−35]The thiophene–FeS
interactions were investigated on the low-index (001), (011), and
(111) surfaces by employing the periodic slab model. The slabs were
constructed with identical surfaces in order to avoid artificial electric
fields in the vacuum for studies of polar surfaces. The (3 ×
3), (4 × 2), and (4 × 2) supercells of the elementary FeS
units were used to model to the (001), (011), and (111) surfaces,
respectively. In each simulation cell, a vacuum region of 15 Å
was added to avoid interactions between periodic slabs. An analysis
of the surface energies for each FeS surface with varying stoichiometry
versus the sulfur chemical potential, μS, is presented
and discussed in section ., where μS characterizes the surface stabilities
under different environmental conditions (S-rich or Fe-rich conditions).The structural optimizations of the thiophene–FeS systems
were carried out without any symmetry constraints, and in particular,
the thiophene molecule was free to move away laterally and vertically
from the initial binding site or reorient itself to find the minimum
energy adsorption structure. Surface relaxation was taken into account,
and the three topmost atomic layers together with the thiophene molecule
were allowed to fully relax in the surface supercell until residual
forces on all atoms were ≤0.03 eV/Å, while the bottom
layers were kept fixed in their bulk positions so as to represent
a semi-infinite bulk crystal. Bader charge analysis was carried out
for all the adsorbate–substrate systems, using the code implemented
by Henkelman and co-workers[61] to quantify
charge transfer between the surfaces and adsorbates. The climbing-image
nudged elastic band (CI-NEB) method,[62] a
robust and efficient approach for reaction path searches, was used
to locate energy barriers and transition states (TS) through the minimum
energy pathway (MEP) by connecting two minima, the initial (IS) and
final (FS) states. Typically, six images were produced between the
states of reactant and product in each elementary process as the initial
guesses for the reaction coordinates. Identified transition states
were further confirmed through vibrational frequency calculations,
in which only one imaginary frequency is obtained corresponding to
the reaction coordinate. The activation energy (EA) barriers were estimated to be the energy difference
between TS and IS, whereas the reaction energies (ER) were calculated as the energy difference between the
FS and IS.
Results and Discussion
Surface
Characterization
The surfaces were created from the relaxed
structure of bulk FeS in order to eliminate the presence of fictitious
forces during surface relaxation. In order to characterize the surface
stabilities under different environmental conditions (S-rich or Fe-rich
conditions), we have performed an analysis of the surface energies
of the different FeS surfaces with varying stoichiometries versus
the sulfur chemical potential, μS. When the chemical
potential of sulfur is high, there is an excess of sulfur in the reservoir,
and the conditions are described as S-rich. When the chemical potential
of sulfur is low, there is a deficiency of sulfur in the reservoir,
and the conditions are described as Fe-rich. Different stoichiometries
of the low index (001), (011), and (111) surfaces of FeS were modeled
in order to establish a trend between surface composition and relative
stability. For convenience we denote the sulfur-deficient and sulfur-rich
surfaces by S–n and S+n,
respectively, where n is the number of S atoms removed
(−) from or added (+) to the stoichiometric surface, which
itself is denoted as S0. Figure shows the relaxed structures of S0, S–3, and S+3 compositions for each surface. To quantify
the structural stabilities of the different stoichiometric surfaces,
we have calculated the surface energies at temperature T and pressure p defined asHere, Gsurf denotes the Gibbs free energy of a periodically repeated slab, which
exposes a surface with area A. For the determination
of A, the bottom and the top side of the slab are
taken into account resulting in a factor of 2. The terms Ni and μi are the number and the chemical
potential of species i, respectively, present in
the system. For the FeS surface, i = Fe and S. Because the surface
is in equilibrium with the underlying bulk sulfide, the two chemical
potentials, μFe and μS, are related via the Gibbs free
energy of the bulk, i.e., μFe + μS = gFeSbulk, where gFeSbulk denotes the Gibbs free energy per formula unit. Inserting this constraint
in eq leads to a surface
energy as a function of the chemical potential of sulfur:Under ambient conditions, G can be approximated by the total energies from DFT calculations,
without contributions from configurational or vibrational entropies.[63] Values of γ(T, p) are shown in Figure for μS ranging from the energy of
a sulfur atom in SO2 (−6.32 eV) to that of an isolated
sulfur atom (0 eV) to simulate environments from oxidizing conditions
to S-rich conditions. Other annealing environments, employing H2S (μS = −3.77 eV) and S2 (μS = −2.63 eV) as the sulfur reservoirs,
were also considered to simulate sulfur-poor (iron-rich) to sulfur-rich
conditions.
Figure 2
Geometry-optimized surface structures of the (a) FeS(001), (b)
FeS(011), and (c) FeS(111) surfaces with S0, S–3,
and S+3 composition. (Color scheme: Fe, gray; Ssurface,
yellow; and Sadded, orange.)
Figure 3
Calculated surface energies of the (a) (001), (b) (011), and (c)
(111) surfaces of FeS as functions of the change in sulfur chemical
potential μS.
Geometry-optimized surface structures of the (a) FeS(001), (b)
FeS(011), and (c) FeS(111) surfaces with S0, S–3,
and S+3 composition. (Color scheme: Fe, gray; Ssurface,
yellow; and Sadded, orange.)Calculated surface energies of the (a) (001), (b) (011), and (c)
(111) surfaces of FeS as functions of the change in sulfur chemical
potential μS.The surface energies of the fully relaxed stoichiometric
surfaces (S0) of the (001), (011), and (111) surfaces were
calculated at 0.17, 0.95, and 1.52 J m–2,
respectively, in agreement with our previous calculations.[32,64] The significant stability of the (001) surface compared to the other
surfaces can be attributed to the fact that its creation involves
only breaking the weak van der Waals interactions between the sulfide
layers. It can be seen from Figure that the equilibrium surface stoichiometries of the
FeS surfaces can be tuned by changing μS through
the use of different FeS growth and annealing environments. For all
values of μS, the stoichiometric surfaces are found
to be more stable than the sulfur-deficient surfaces (S–1,
S–2, and S–3). Under sulfur-rich annealing conditions
(S atom and S2), the surfaces with excess sulfur atoms
(S+1, S+2, and S+3) become more stable than the stoichiometric surfaces,
S0, which is consistent with the results obtained at other
iron sulfide surfaces, including pyrite.[65,66] Our results show that under sulfur-rich growth and annealing conditions,
the FeS surfaces will preferentially exist fully covered with sulfur
atoms. The increased stability of the sulfur-covered surfaces (nonstoichiometric
(S+n)) compared to the stoichiometric S0 surfaces can be explained by considering the fact that the additional
sulfur atoms adsorb at the low-coordinated surface Fe sites, thereby
terminating dangling bonds and stabilizing the surface.
The Free Thiophene Molecule
Thiophene is a heterocyclic
compound that resembles benzene, and it is especially common in petroleum.
Owing to its relatively simple structure, thiophene is often used
as a model molecule for studying the catalytic C–S bond scission
and HDS mechanism. Figure a shows the schematic molecular structure, and the projected
density of states (PDOS) is depicted in Figure b. The thiophene molecule has two pairs of
electrons on the S atom, with one pair in the six-electron π-system
and the other in the plane of the ring. Consequently, thiophene can
act as either an n-type donor by donating the lone pair of electrons
of the sulfur atom to a surface cation (direct S–M bond) or
as a π-type donor by utilizing the delocalized electrons of
the aromatic ring to form a π-complex with the cation. The PDOS
shows the 1a2 and 2b1 orbitals composed mainly
of the C and S p-states, respectively, around the Fermi level (Figure b), and these orbitals
are expected to play an important role in the linkage of the thiophene
molecule to the FeS substrate.
Figure 4
(a) Optimized structure of the thiophene
molecule. The number x in C represents the position of the C atom in the thiophene ring.
(b) The partial density of states showing the total and p-states projection on the C and S atoms.
(a) Optimized structure of the thiophene
molecule. The number x in C represents the position of the C atom in the thiophene ring.
(b) The partial density of states showing the total and p-states projection on the C and S atoms.To validate the accuracy of the calculation, we have calculated
and compared the geometrical parameters of the free thiophene (C4H4S) molecule with available experimental data[67,68] and previous theoretical[9,69] results. The optimized
geometrical parameters of the thiophene molecule are summarized in Table . The experimental
and other calculated data are also provided for comparison. It is
clear that all bond lengths calculated by the DFT method with BLYP
and B3LYP basis sets are overestimated when compared with the experimental
geometries. The present calculations using the PW91-GGA functional
with dispersion-correction yield better agreement with the experimental
geometries, thus making our calculation method reliable. The C–S
bond length for free thiophene is calculated at 1.718 Å, in good
agreement with the experimental value of 1.714 Å.[67,68]
Table 1
Relaxed Geometry Bond Lengths of C4H4Sa
bond length
this work PW91-D2
BLYP[69]
B3LYP[69]
PW91[9]
exptl[67,68]
d(C1–S) (Å)
1.718
1.754
1.736
1.729
1.714
d(C1–C2) (Å)
1.375
1.378
1.367
1.374
1.369
d(C2–C3) (Å)
1.423
1.437
1.429
1.422
1.423
d(C3–C4) (Å)
1.374
1.378
1.369
1.374
1.369
d(C4–S) (Å)
1.718
1.758
1.737
1.729
1.714
The experimental
and other theoretical results are given for comparison.
The experimental
and other theoretical results are given for comparison.
Thiophene Adsorption
The adsorption of the thiophene molecule on the catalyst surface
is an important starting step in its desulfurization process. If the
interaction of the thiophene molecule with the catalyst is too weak,
it is impossible to activate it for further reaction.[70] The first interest of this study is therefore to determine
the lowest-energy adsorption configurations of thiophene on the stoichiometric
and nonstoichiometric (S+n) surfaces with additional
adsorbed sulfur and to characterize the strength of their interaction
and the extent of C–S bond activation. The nonstoichiometric
(S–n) surfaces were not considered for the
thiophene adsorption as they are unstable relative to the stoichiometric
S0 surface. Different initial adsorption possibilities,
including flat and upright configurations, have been subjected to
geometry optimization until the residual forces on all atoms were
≤0.03 eV/Å. The adsorption energy (Eads), which is a measure of the strength of the thiophene–FeS
interactions, is defined as follows:where Esurface+thiophene is the total energy of the adsorbate–substrate system in
the equilibrium state, Esurface the total
energy of the substrate alone, and Ethiophene the total energy of the isolated adsorbate. By this definition,
a negative value of Eads indicates an
exothermic and stable adsorption, whereas a positive value indicates
unstable. In this work, all of the reported adsorption and activation
energies were corrected by the zero-point energy (ΔZPE), calculated
as the difference between the ZPE correction of the thiophene molecule
on the surface and in the gas phase, according to eq :where h is the Planck constant and ν are
the vibrational frequencies.
Thiophene Adsorption
on Nonstoichiometric (S+n) Surfaces
As the
FeS surfaces with excess sulfur atoms (S+n) become
more stable than the stoichiometric surfaces, S0, under
sulfur-rich annealing conditions (S atom and S2), we have
first investigated the adsorption of the thiophene molecule on the
nonstoichiometric (S+n) (001), (011), and (111) surfaces,
where the surfaces are fully covered with additional sulfur. The optimized
structures of thiophene adsorption are shown in Figure , and the calculated adsorption energies
and optimized geometry parameters are summarized in Table . The thiophene molecule was
physisorbed on all three sulfur-covered FeS surfaces, releasing adsorption
energies of 0.32, 0.39, and 0.43 eV on the (001)+9S, (011)+6S, and
(111)+6S surfaces, respectively. In each adsorption structure, the
thiophene molecule remains planar without any significant changes
to the internal conformations, which is consistent with the physisorbed
character of thiophene. The average C–Ssurf, S–Ssurf, and H–Ssurf interatomic bond distances
were calculated to be larger than 3 Å in each adsorption structure,
and no charge transfer occurred between the surfaces and the adsorbed
thiophene molecule, as shown in Table . The weak adsorption of the thiophene molecule on
the nonstoichiometric (S+n) FeS surfaces can be explained
by considering the fact that the layer of negatively charged S atoms
shields the inner Fe atoms, giving rise to repulsive interactions
between the S atom in the thiophene molecule and the surface S atoms.
These weakly bound structures suggest that the nonstoichiometric (S+n) surfaces with coordinatively saturated sulfur sites are
not suitable for activating the thiophene molecule for further surface
reactions.
Figure 5
Optimized adsorption structures of a thiophene on the nonstoichiometric
(S+n) FeS surfaces fully covered with additional
sulfur, in side (top) and top (bottom) views. (Color scheme: Fe, gray;
Sslab, yellow; C, blue; Smolecule/added, orange.)
Table 2
Adsorption Energies
and Structural Parameters of Thiophene Adsorbed on Nonstoichiometric
(S+n) FeS (001), (011), and (111)a
surface
(001)+9S
(011)+6S
(111)+6S
configuration
physisorbed
physisorbed
physisorbed
Eads (eV)
–0.32 (−0.21)
–0.39 (−0.27)
–0.43 (−0.32)
∑q (e–)
0.00
0.00
0.00
d(C1–C2) (Å)
1.376
1.375
1.377
d(C2–C3) (Å)
1.425
1.424
1.421
d(C3–C4) (Å)
1.375
1.375
1.380
d(C1–S) (Å)
1.719
1.719
1.720
d(C4–S) (Å)
1.719
1.719
1.717
d(SThio–Ssurf) (Å)
3.619
3.576
3.362
d(C–Ssurf) (Å)
3.157
3.291
3.075
d(H–Ssurf) (Å)
3.281
3.279
3.461
The PBE Eads are shown in parentheses.
Optimized adsorption structures of a thiophene on the nonstoichiometric
(S+n) FeS surfaces fully covered with additional
sulfur, in side (top) and top (bottom) views. (Color scheme: Fe, gray;
Sslab, yellow; C, blue; Smolecule/added, orange.)The PBE Eads are shown in parentheses.
Thiophene
Adsorption on Stoichiometric (S0) Surfaces
Following
the trend generally observed for surface reactivity, where the thermodynamically
less stable surfaces are more reactive toward adsorbing species,[64,71,72] we have also investigated the
adsorption and surface-bound reactions of thiophene on the stoichiometric
(S0) surfaces as they are the next most stable surfaces
under sulfur-rich annealing conditions and the most stable under oxidizing
conditions. Several possible configurations and binding sites were
studied for thiophene adsorption on the stoichiometric surfaces, but
only the lowest-energy structures are shown in Figure and Table (the remaining adsorption geometries and calculated
adsorption energies are given in the Supporting Information (Figures S1–S3 and Table S1, respectively).
Figure 6
Optimized
adsorption structures of a thiophene on stoichiometric (S0) FeS surfaces, in side (top row) and top (bottom row) views. (Color
scheme: Fe, gray; Sslab, yellow; C, blue; Smolecule, orange.)
Table 3
Adsorption Energies
and Structural Parameters of Thiophene Adsorbed on Stoichiometric
(S0) FeS (001), (011), and (111) Surfacesa
surface
FeS(001)
FeS(011)
FeS(111)
configuration
flat
η3(2C, S)
η3(2C, S)
Eads (eV)
–0.38 (−0.26)
–1.34 (−1.21)
–1.93 (−1.80)
∑q (e–)
0.00
0.45
0.57
d(C1–C2) (Å)
1.376
1.422
1.367
d(C2–C3) (Å)
1.423
1.443
1.427
d(C3–C4) (Å)
1.375
1.359
1.433
d(C1–S) (Å)
1.718
1.807
1.810
d(C4–S) (Å)
1.718
1.422
1.782
d(S–Fe) (Å)
–
2.331
2.448
d(C–Fe) (Å)
–
2.133
2.282
d(SThio–Ssurf) (Å)
3.487
3.237
3.255
d(C–Ssurf) (Å)
3.290
2.995
3.158
d(H–Ssurf) (Å)
3.359
3.095
2.731
The PBE Eads are shown in parentheses.
Optimized
adsorption structures of a thiophene on stoichiometric (S0) FeS surfaces, in side (top row) and top (bottom row) views. (Color
scheme: Fe, gray; Sslab, yellow; C, blue; Smolecule, orange.)The PBE Eads are shown in parentheses.
Thiophene
Adsorption on Stoichiometric FeS(001) Surface
At the stoichiometric
FeS(001) surface terminated by sulfur in the topmost layer, the flat
adsorption configuration, wherein the thiophene molecular ring lies
symmetrically flat around the interacting surface S atom (top view
of Figure a), released
an adsorption energy of 0.38 eV. The symmetric nature of the flat
adsorption geometry around the surface S atom can be attributed to
the delocalization of electrons within the aromatic ring. The average
C–S interatomic bond distance was calculated at 3.325 Å,
whereas the S–S distance converged at 3.487 Å. The large
interatomic bond distances are characteristic of physisorption. Compared
to the flat configuration, the upright adsorption geometries with
the S atom of the molecule pointing either away from the surface (upright–H)
or toward the surface (upright–S) as shown in Figure S1 have adsorption energies of only −0.19 and
−0.13 eV, respectively. Consistent with the physisorbed character
observed at the nonstoichiometric (S+n) surfaces,
we found that in each adsorption structure on the stoichiometric FeS(001)
surface, the thiophene molecule remains planar without any significant
changes in the internal conformations.
Thiophene
Adsorption on Stoichiometric FeS(011) Surface
Compared to
the stoichiometric FeS(001) surface, stronger chemisorption of the
thiophene molecule is obtained on the stoichiometric FeS(011) surface,
because it favors direct cation−π interactions between
the thiophene molecule and the Fe-terminating sites. The coordination
of the thiophene molecule onto the surface is denoted as η(m, n),
where the superscript x represents the number of
interacting atoms of the molecule and (m, n) denotes the specific atoms of the adsorbate that interacts
with the surface species. As on the other surfaces, the adsorption
configurations, wherein the thiophene molecule lies almost flat on
the FeS(011) surface, were found to be energetically more favorable
than the upright ones. Similar results were previously reported for
thiophene adsorption on other layered materials including MoS2[5,16,17] and ReS2.[24] The lowest-energy stable adsorption
configuration of thiophene on the stoichiometric FeS(011) surface
is a tridentate structure (denoted as η3(2C, S) as
shown in Figure b).
In this structure, the thiophene molecule is adsorbed on the surface
via two short C–Fe bonds of average length 2.133 Å and
one S–Fe bond of length 2.331 Å. The adsorption energy
of the tridentate structure η3(2C, S) is −1.34
eV. This can be compared to the adsorption energy of another tridentate
structure (η3(3C), Figure S2b), in which the thiophene molecule interacts with surface cations
via three C–Fe bonds of average length 2.201 Å, with an
adsorption energy of −1.21 eV. The upright adsorption configuration
in which the thiophene interacts via one S–Fe bond of length
2.255 Å (denoted by η1(S) as in Figure S2c) released the least energy of 0.59
eV. The interaction via a single S–Fe bond is not sufficient
to produce a substantial adsorption energy, which explains why the
flat adsorption configurations are energetically more stable than
the upright configuration. The thiophene molecule is slightly distorted
out-of-plane in the flat adsorption configurations and it is characterized
by weakening of the C–S bonds as they are elongated from 1.718
Å in the gas phase to the range of 1.765–1.807 Å
after adsorption (Table ). We have also observed elongations in the C–C bond distances
after adsorption, which suggest that the adsorption has a clear effect
in the loss of aromaticity of the thiophene ring. The flat adsorption
configurations therefore represent preferential precursors for direct
desulfurization or hydrodesulfurization reactions of thiophene on
the stoichiometric FeS(011) surface.
Thiophene
Adsorption on Stoichiometric FeS(111) Surface
The strongest
adsorption of the thiophene molecule was obtained on the stoichiometric
FeS(111) surface, which is in agreement with it being the least stable
stoichiometric surface and therefore the most reactive.[26] As on the stoichiometric FeS(011) surface, the
flat configurations wherein the thiophene lies almost flat on the
surface and interacts via multiple carbon–iron and sulfur–iron
bonds are found to be energetically more favorable than the upright
configuration in which the thiophene interacts with the iron sites
via only the sulfur atom. The lowest-energy adsorption configuration
of thiophene on the stoichiometric FeS(111) surface is calculated
to be a tridentate structure (η3(2C, S), Figure c), in which the
thiophene molecule forms two short C–Fe and one S–Fe
bonds with the surface cations, releasing an adsorption energy of
1.93 eV, i.e., 0.59 eV more than the lowest-energy structure obtained
on the thiopheneFeS(011) surface. The average C–Fe bond length
was calculated to be 2.284 Å, whereas the S–Fe bond was
calculated to be 2.448 Å. The other flat configuration in which
the thiophene forms two C–Fe bonds at an average length of
2.124 Å (denoted as η2(2C), Figure S3b), released an adsorption energy of 1.58 eV. In
both flat adsorption configurations, the C–S bonds are weakened
as they are elongated (Table ) compared to the gas-phase bond distance (Table ), which indicates that the
C–S bonds are activated. The upright thiophene adsorption configuration
on the stoichiometric FeS(111) surface was found to be favorable at
a bridge-Fe site (Eads = 1.43 eV), with
the S atom bridging two Fe atoms (η2(S), Figure S3c) at an average S–Fe bond of
2.194 Å. The superior reactivity of the FeS(111) surface toward
thiophene coupled with the significant activation of the C–S
bonds compared to the other surfaces suggests that further surface
reactions of direct desulfurization or hydrodesulfurization may take
place preferentially on FeS nanoparticles expressing the (111) surface.(a) Isosurface
contours of the electron localization function of the thiophene–FeS(001)
system and (b) the partial DOS projected on the C and S p-states of
the adsorbed thiophene.
Electronic Structures
We now discuss the electronic structure and bonding mechanism of
the thiophene molecule on the different FeS surfaces. For the (001)
surface, where the thiophene molecule is only weakly physisorbed,
we have plotted contours of the electron localization function (ELF)
as displayed in Figure a for the lowest-energy flat adsorption structure. As evident from
the ELF plot, the weak interaction can be attributed to the steric
repulsion between the electron density of the molecule’s sulfur
atom and the surface-terminating S atoms. Consistent with the physisorbed
character of thiophene on the FeS(001) surface, we observe negligible
changes in the partial density of states projected on the C and S
p-states of the adsorbed thiophene (Figure b) compared to that of the gas-phase molecule
(Figure b). On the
stoichiometric (011) and (111) surfaces where the thiophene molecule
is chemisorbed, differential charge density (Δρ) was employed
to gain insight into the electron density redistribution within the
adsorbate–substrate systems due to the formation of new bonds.
Δρ is obtained by subtracting from the electron density
of the total FeS–thiophene systems both the electron density
of the clean FeS surface and that of an isolated thiophene.The atomic positions of the clean FeS surface and
of the thiophene array (i.e., including the molecule’s images
in neighboring cells) are taken to be the same as those of the relaxed
FeS–thiophene system. In this way, the presentation highlights
the change in electronic structure and bond formation as a result
of the adsorption. Shown in panels a1 and b1 of Figure are the iso-surface contour plots of the
differential charge density for the lowest-energy adsorption configurations
of thiophene on the FeS(011) and FeS(111) surfaces, respectively.
On both surfaces, we find that the chemisorptive character of the
thiophene leads to significant charge density increase (green isosurfaces)
around the centers of the newly formed bonds and further in the iron
t2g-like states and antibonding states of the thiophene
molecule. The main charge density decrease (red isosurfaces) is found
in the d-states of the interacting Fe atoms and the HOMO-π-states
of the aromatic ring. Further information on the electronic structures
of thiophene adsorption on the FeS surfaces was obtained from analyses
of the electronic density of states projected (PDOS) on the C and
S p-orbitals of the molecule and on the interacting surface iron atoms,
as presented in panels a2 and b2 of Figure for thiophene adsorbed on the FeS(011) and
FeS(111) surfaces, respectively. The PDOS clearly shows the chemisorptive
character of thiophene on the (011) and (111) surfaces, as reflected
in the disappearance of the 2b1 and 1a2 orbitals
of the adsorbed thiophene in the vicinity of the Fermi level, which
confirms that the thiophene molecule is linked to the FeS surfaces
through its π-system. The newly formed bonds arise from the
hybridization of surface Fe 3d and the C-2p and S-3p states of the
thiophene molecule, showing the Fe–C and Fe–S bonds
to be of covalent character. Our Bader population analyses reveal
that the adsorption is characterized by charge transfer from the interacting
surface species to the thiophene molecule at the (011) and (111) surfaces
(Table ). In the lowest-energy
adsorptions, the thiophene molecule gained a net charge of 0.45e– and 0.57e– from the (011) and (111)
FeS surfaces, respectively. The larger charge transfers from the (111)
surface is consistent with the larger adsorption energy released upon
thiophene adsorption on the (111) surface. We believe that the effective
hybridization between surface Fe 3d states and the thiopheneC-2p
and S-3p states, characterized by charge transfer from the surface
to the thiophene molecule, is responsible for the weakening of the
C–S bonds.
Figure 7
(a) Isosurface
contours of the electron localization function of the thiophene–FeS(001)
system and (b) the partial DOS projected on the C and S p-states of
the adsorbed thiophene.
Figure 8
(Left) Electron density difference isosurface contours
upon thiophene adsorption on the stoichiometric (011) and (111) FeS
surfaces, showing regions of electron density accumulation (green)
and depletion (red) by 0.02 e/Å3, respectively. (Right)
Partial DOS projected on the interacting surface Fe d-states and on
the C and S p-states of the adsorbed thiophene.
(Left) Electron density difference isosurface contours
upon thiophene adsorption on the stoichiometric (011) and (111) FeS
surfaces, showing regions of electron density accumulation (green)
and depletion (red) by 0.02 e/Å3, respectively. (Right)
Partial DOS projected on the interacting surface Fe d-states and on
the C and S p-states of the adsorbed thiophene.
Vibrational Frequencies
In order
to propose an assignment for the observed features of the adsorbed
thiophene, we have computed the wavenumbers of the normal modes for
the lowest-energy adsorption geometries on the (001), (011), and (111)
surfaces (Table ).
Our computed wavenumbers for the free thiophene molecule compare closely
with experimental data[73] and earlier theoretical
results,[17] which ensures the reliability
and accuracy of our approximate assignments. For example, the asymmetric
and symmetric υ(C=C) stretching modes for the free thiophene
were computed at 1494 and 1408 cm–1, which compare
closely with the experimental values of 1507 and 1409 cm–1, respectively. For the adsorbed thiophene molecule on the stoichiometric
FeS surfaces, we have restricted our analysis to wavenumbers above
600 cm–1, because below this value an important
mixing of the various normal modes occurs when thiophene is adsorbed,
making comparison of the free and adsorbed molecules difficult and
unreliable.
Table 4
Vibrational Frequencies (cm–1) of the Lowest-Energy Thiophene Adsorption Configurations on the
Stoichiometric FeS (001), (011), and (111) surfacesa
free C4H4S
FeS(001)
FeS(011)
FeS(111)
vib. mode
experiment[73]
calculated
flat
η3(2C, S)
η4(2C, S)
υ(C–H)
3126
3133
3135
3120
3121
υ(C–H)
3125
3128
3133
3139
3127
υ(C–H)
3098
3103
3109
3110
3107
υ(C–H)
3098
3105
3106
3111
3102
υ(C=C)asym
1504
1494
1489
1481
1469
υ(C=C)sym
1409
1407
1406
1348
1370
υ(ring)
1360
1349
1349
1292
1287
δ(C–H)
1256
1233
1228
1188
1191
δ(C–H)
1085
1066
1063
1068
1070
δ(C–H)
1083
1061
1059
1039
1062
δ(C–H)
1036
1034
1035
983
880
υ(C–S)asym
751
740
736
620
667
The stretching and bending modes are denoted by υ
and δ, respectively.
The stretching and bending modes are denoted by υ
and δ, respectively.Generally, we observe no significant differences between the vibrational
frequencies of the thiophene adsorbed on the stoichiometric FeS(001)
surface compared to the free thiophene molecule, in good agreement
with the physisorbed characteristics observed. However, we do observe
notable differences between adsorbed thiophene on the stoichiometric
FeS(011) and FeS(111) surfaces, where it was chemisorbed, compared
to the free thiophene molecule. For instance, the C=C asymmetric
and symmetric stretching frequencies of the adsorbed thiophene molecule
were assigned at 1478 and 1370 cm–1 on the (011)
surface and at 1459 and 1348 cm–1 on the (111) surface,
which represents softening compared to the gas-phase C=C asymmetric
and symmetric stretching frequencies of 1494 and 1407 cm–1. We also observe softening of the C–S asymmetric stretching
modes, calculated at 667 and 620 cm–1 on the stoichiometric
FeS(011) and FeS(111) surfaces, respectively, compared to the gas-phase
value of 740 cm–1, which is consistent with the
elongated C–S calculated for the adsorbed thiophene on these
surfaces. The frequency of the υ(ring) mode also becomes lower
for the adsorbed thiophene compared to the gas-phase molecule. They
are assigned at 1292 and 1287 cm–1 at the stoichiometric
FeS(011) and FeS(111) surfaces, respectively, compared to the gas-phase
value of 1349 cm–1. The wavenumbers exhibited by
the adsorbed thiophene molecule around 3000 cm–1 can all be assigned to the C–H stretching modes, which are
shifted only slightly with respect to the gas-phase frequencies.
Thiophene Dissociation
The results presented
above show that thiophene adsorbs strongly onto the stoichiometric
(011) and (111) surfaces, where the adsorption process results in
weakening of the C–S bonds. We now seek to determine how the
differences in the structure and electronic properties may dictate
the reactivity and direct desulfurization of the thiophene molecule
(i.e., C4H4S → C4H4 + S) on the stoichiometric (011) and (111) surfaces. Beginning with
the molecularly adsorbed complexes in the lowest-energy configurations,
the direct desulfurization process involves the successive scission
of the two C–S bonds. In the first step of the reaction, a
single C–S bond is broken, giving a monodissociated intermediate
molecule, and the second step of the reaction involves the scission
of the second C–S bond. The relative energies were calculated
with respect to the lowest-energy adsorption complexes on each surface,
and the zero of energy was set at the initial molecularly adsorbed
thiophene state. Shown in Figures and 10 are the reaction profiles
for the direct desulfurization of C4H4S into
C4H4 and S fragments on the (011) and (111)
surfaces, respectively, with the insets showing schematic representation
of the steady states along the reaction coordinates. On the FeS(011)
surface, the scission of the first S–C bond was found to have
an endothermic reaction energy of 0.63 eV with an activation barrier
of 1.28 eV (Figure ). The dissociated C–S bond of this intermediate structure
was calculated at 3.092 Å, with the S–Fe distance at 2.331
Å. The length of the dissociating C–S bond in the transition
state (EA1) was calculated at 2.288 Å compared
to 1.807 Å in the initial molecular adsorption state. The next
step of the dissociation, which involves the scission of the second
C–S bond, shows the dissociated sulfur atom at a top Fe site
(S–Fe = 2.019 Å) and the C4H4 fragment
linked to the surface Fe ions through the terminal carbon atoms (average
Fe–C = 1.867 Å). The terminal carbons are bonded to Fe
atoms in an sp3-like configuration, whereas the two middle
carbon atoms are pushed away from the surface, in an sp2-like configuration. In the final state, the process is endothermic
with overall reaction energy of 1.04 eV along with a second reaction
barrier of 1.62 eV. Similar high activation energy barriers and endothermicity
have been reported for the direct desulfurisation pathway of thiophene
on the ReS2(001) surface[24] and
on transition-metalcarbides and nitride.[8,75] On
the ReS2(001) surface,[24] the
breaking of the first and second C–S bonds needs to surmount
activation energy barriers of 1.76 and 1.85 eV, respectively, whereas
on the NbC(001) surface,[74] activation energy
barriers of 1.74 and 1.82 eV have to be overcome. Similarly, on the
VC(001) surface,[8] the scission of the first
and second C–S bonds needs to overcome activation energy barriers
of 1.49 and 1.88 eV, respectively.
Figure 9
Reaction profile for the direct desulfurization
of C4H4S on stoichiometric FeS(011). The desulfurization
reaction proceeds in two steps with successive scission of the two
C–S bonds.
Figure 10
Reaction profile for
the direct desulfurization of C4H4S on stoichiometric
FeS(111). The desulfurization reaction proceeds in two steps with
successive scission of the two C–S bonds.
Reaction profile for the direct desulfurization
of C4H4S on stoichiometric FeS(011). The desulfurization
reaction proceeds in two steps with successive scission of the two
C–S bonds.Reaction profile for
the direct desulfurization of C4H4S on stoichiometric
FeS(111). The desulfurization reaction proceeds in two steps with
successive scission of the two C–S bonds.On the FeS(111) surface, the scission of the first S–C
bond was found to be an endothermic reaction requiring an overall
energy of 0.86 eV with an activation barrier of 1.49 eV (Figure ). The dissociated
CH-end of this intermediate structure is bound across the FeS layer
at a bridge site between S and Fe (C–Fe = 2.084 Å and
C–S = 1.762 Å). The length of the dissociated C–S
bond in this intermediate structure was calculated at 3.714 Å
compared to 2.277 Å in the transition state and 1.810 Å
in the initial molecular adsorption state. Relative to the first C–S
bond dissociated state, the scission of the second C–S bond
is found to be exothermic (ER = −1.01
eV), with an activation of 1.58 eV. The overall reaction energy of
the entire process is slightly exothermic with ER2 = −0.15 eV. The completely dissociated sulfur atom
binds at a bridge site between adjacent surface Fe sites at an average
S–Fe distance of 2.075 Å. One of the terminal carbon atoms
of the C4H4 fragment was bound at a bridge Fe
site (average C–Fe = 1.937 Å), whereas the other end was
bound to a S site (C–S = 1.742 Å) across the FeS layer.
On both reactive (011) and (111) surfaces, the activation barriers
were always found to be smaller than the desorption energies, suggesting
that, when adsorbed, the thiophene will more readily undergo further
surface chemical reactions, including direct desulfurization and hydrodesulfurization,
than desorb from the surface. It should be noted that the butadiene
fragment may react further by hydrogenation or intramolecular rotation.
These cases were not explored here because they would occur only after
S removal and are not the key feature of desulfurization.
Summary and Conclusions
In the present periodic DFT-D2
study, we have studied the adsorption structures and bonding mechanism
of thiophene on the stoichiometric (S0) and nonstoichiometric
(S+n) (001), (011), and (111) surfaces of layered FeS, as well as
the catalytic properties of the reactive stoichiometric (011) and
(111) surfaces toward the direct desulfurization of the adsorbed thiophene.
We found that the strength of adsorption of thiophene onto the FeS
surfaces is related to the stability of the different surfaces, where
it adsorbs most strongly onto the least stable FeS(111) surface and
most weakly onto the most stable FeS(001) surface. In general, we
have shown that the flat adsorption structures in which the thiophene
molecule forms multiple π-bonds with the surface Fe ions were
energetically more favorable than the upright adsorption geometries.
The adsorption of the thiophene onto the stoichiometric (011) and
(111) surfaces was shown to be characterized by charge transfer from
the interacting Fe d-states into the π-system of the thiophene
molecule, which induced changes in the intramolecular structure including
loss of aromaticity and elongation of its C–S bonds. On the
basis of the thermodynamic and kinetic analysis of the elementary
steps involved in the direct desulfurization of thiophene on the FeS
surfaces, we have shown that direct desulfurization of thiophene is
most likely to occur on the (111) surface, as reflected by the overall
exothermic reaction energy (ER2 = −0.15
eV), calculated for the process, although a very high activation energy
of 1.58 eV has to be overcome. The high activation barriers suggest
that the direct desulfurization of thiophene on the FeS surfaces may
occur only at elevated pressure and temperature conditions, which
is typical of industrial HDS units, such as in a refinery over a catalyst
consisting of an alumina base impregnated with cobalt and molybdenum
(usually called a CoMo catalyst).[75,76] This work
provides a molecular-level insight into the surface structures and
electronic factors governing the adsorption and direct desulfurization
of thiophene on layered FeS. Future investigations will extend the
present study to systematically investigate the hydrogenation pathways
(HYD) for thiophene desulfurisation in order to draw comparison between
the HYD and the DDS mechanism reported in this work. The thermodynamic
and kinetic data presented in this study may also be used to develop
relevant microkinetic models for the desorption processes, including
temperature-programmed desorption (TPD) of butadiene and H2S and in the presence of H2.
Authors: Randall E Mielke; Kirtland J Robinson; Lauren M White; Shawn E McGlynn; Kavan McEachern; Rohit Bhartia; Isik Kanik; Michael J Russell Journal: Astrobiology Date: 2011-11-23 Impact factor: 4.335