Jingxuan Liang1, Xiangli Wen1,2, Shikai Wei1, Shuqi Zheng1. 1. School of New Energy and Materials, China University of Petroleum (Beijing), Beijing 102249, P. R. China. 2. State Key Laboratory of Tribology, Department of Mechanical Engineering, Tsinghua University, Beijing 100084, P. R. China.
Abstract
Vacancy defects are inherent point defects in materials. In this study, we investigate the role of Fe vacancy (VFe) and S vacancy (VS) in the interaction (adsorption, dissociation, and diffusion) between H2S and the FeS(001) surface using the dispersion-corrected density functional theory (DFT-D2) method. VFe promotes the dissociation of H2S but slightly hinders the dissociation of HS. Compared with the perfect surface (2.08 and 1.15 eV), the dissociation energy barrier of H2S is reduced to 1.56 eV, and HS is increased to 1.25 eV. Meanwhile, S vacancy (VS) significantly facilitates the adsorption and dissociation of H2S, which not only reduces the dissociation energy barriers of H2S and HS to 0.07 and 0.11 eV, respectively, but also changes the dissociation process of H2S from an endothermic process to a spontaneous exothermic one. Furthermore, VFe can promote the hydrogen (H) diffusion process from the surface into the matrix and reduce the energy barrier of the rate-limiting step from 1.12 to 0.26 eV. But it is very hard for H atoms gathered around VS to diffuse into the matrix, especially the energy barrier of the rate-limiting step increases to 1.89 eV. Finally, we propose that VS on the FeS(001) surface is intensely difficult to form and exist in the actual environment through the calculation results.
Vacancy defects are inherent point defects in materials. In this study, we investigate the role of Fe vacancy (VFe) and S vacancy (VS) in the interaction (adsorption, dissociation, and diffusion) between H2S and the FeS(001) surface using the dispersion-corrected density functional theory (DFT-D2) method. VFe promotes the dissociation of H2S but slightly hinders the dissociation of HS. Compared with the perfect surface (2.08 and 1.15 eV), the dissociation energy barrier of H2S is reduced to 1.56 eV, and HS is increased to 1.25 eV. Meanwhile, S vacancy (VS) significantly facilitates the adsorption and dissociation of H2S, which not only reduces the dissociation energy barriers of H2S and HS to 0.07 and 0.11 eV, respectively, but also changes the dissociation process of H2S from an endothermic process to a spontaneous exothermic one. Furthermore, VFe can promote the hydrogen (H) diffusion process from the surface into the matrix and reduce the energy barrier of the rate-limiting step from 1.12 to 0.26 eV. But it is very hard for H atoms gathered around VS to diffuse into the matrix, especially the energy barrier of the rate-limiting step increases to 1.89 eV. Finally, we propose that VS on the FeS(001) surface is intensely difficult to form and exist in the actual environment through the calculation results.
H2S corrosion is the most dangerous factor in the corrosion
of equipment in oil and gas fields with high sulfur content. As a
highly toxic gas, H2S not only seriously threatens the
routine use of equipment and pipeline steel but also directly threatens
the safety of human life.[1,2] When steel is used in
the H2S environment, pitting corrosion, local corrosion,
uniform corrosion, linear corrosion, stress corrosion cracking, and
hydrogen-induced cracking occur easily.[3] In the 1980s, Canadian scholars found that corrosion products in
H2S environments were more complex than other corrosion
environments. Especially, when iron-base alloys contacted the wet
H2S environment, corrosion product films would immediately
form on the surface. The types of corrosion products were intricate
and varied, and they often existed in the form of mixed crystals,
mainly iron sulfide compounds with nonstoichiometry.[4,5]Mackinawite (FeS) is an exceptionally crucial iron sulfide
compound.
It is the initial metastable corrosion product formed by steel in
a humid H2S environment at low temperatures, while it is
also the main corrosion product.[6] Due to
the strong reducibility, FeS is readily oxidized and converted into
other more stable iron sulfide compounds.[7] Consequently, FeS is regarded as the forerunner of other iron sulfide
compounds formed in deposition and hydrothermal systems, including
pyrite (FeS2), pyrrhotite (Fe7S8),
and greigite (Fe3S4).[8] Besides, recent studies have shown that FeS exhibits typical metallic
characteristics.[9] In a wet H2S environment, the reaction at the iron sulfide compounds/H2S interface has a vast influence on the formation of subsequent corrosion
products and the transition between corrosion products.[10−13] A prior study discovered that in the Fe–H2S–H2O environment at a high temperature, the crystal evolution
sequence of iron sulfide compounds is as follows: mackinawite →
pyrrhotite → pyrite; troilite → pyrrhotite →
pyrite.[14] In addition, FeS gradually transforms
into pyrrhotite as the temperatures increase.[15] The H atoms generated by H2S dissociation further diffuse
from the surface to the interior of the matrix and gather at H traps
such as defects and inclusions to form H2, thus generating
hydrogen bubbling or cracking.[16] Bai et
al. studied the hydrogen escape behavior of FeS under different hydrogen
charging conditions through the pyrolysis adsorption test, and the
results showed that H diffused from grain boundary/dislocation to
vacancies in the metal and that FeS had no obstruction to hydrogen
permeation.[17]The formation and transformation
of FeS and its hydrogen resistance
properties in the H2S environment have been studied in
detail experimentally. However, it is difficult to determine the interaction
between H2S and the low-dimensional surface of FeS from
a microscopic point of view through the existing experimental techniques.
Density functional theory (DFT) can provide an understanding of the
interactions between small molecules and surfaces at the molecular
level. In recent years, DFT has been widely used to study the adsorption/dissociation
process of molecules and charge transfer between molecules and substrates.
An FeS crystal has a tetragonal structure. Fe atoms are connected
to four equidistant S atoms in a tetragonal lattice by tetrahedral
coordination to form an equilateral tetrahedral layered structure
stacked along the z-axis and stabilized by vdW force.[18] FeS is usually layered, so FeS is characterized
by surface activity and high specific surface area like other two-dimensional
layered materials.[19] In the past, some
scholars have studied the interaction between some small molecules
and diverse low-dimensional surfaces of FeS by the DFT method. Dzade
et al. systematically studied the adsorption/dissociation of various
small molecules on diverse low-dimensional surfaces of FeS.[20−24] The adsorption energy of small molecules at different adsorption
sites on diverse low-dimensional surfaces was investigated, and the
dissociation of small molecules was analyzed. The calculation results
reported that NO, CO2, H2O, C3H7NO2S, and C4H4S are more likely to dissociate on the most unstable
FeS(111) surface. Meanwhile, the dissociation energy barrier of these
molecules is the largest on the FeS(001) surface. Whereafter, further
studies found that preadsorption of O2/O atoms on diverse
low-dimensional surfaces would promote the subsequent adsorption and
dissociation of H2O.[25] Moreover,
Krishnamoorthy of MIT suggested the effect of the insertion of H2 and H atoms in the gap between the FeS layers and the insertion
of H atoms in the Fe vacancy on the tensile strength and elastic modulus
of the matrix.[26] Recently, Wen et al. calculated
the adsorption and dissociation processes of H2S on diverse
low-dimensional surfaces of FeS in corrosive environments.[27] The results demonstrated that H2S
had the lowest dissociation energy barrier on the FeS(011) surface
and the highest on the FeS(001) surface.It is widely known
that crystal defects exist in any material.[28] Vacancy is an inherent point defect in a crystal
structure. The existence of vacancy defects has a considerable effect
on the reactivity of a surface.[29] For instance,
the presence of S vacancies on the pyrite(100) surface not only promoted
the adsorption of formamide but also facilitated the transition of
amino acid from a zwitterionic species to an anionic species.[30,31] Sahraei et al. found that the vacancy defects on the ZnS(110) surface
can change the hydrophilicity of the surface and also prompt the conversion
of amino acid from neutral to zwitterionic.[32,33] Ward et al. revealed that pure FeS could be described by FeS0.94.[34] Furthermore, crystallographic
evidence found by Taylor and Finger et al. confirmed that FeS was
sulfur-deficient (FeS1–, typically
0 ≤ x ≤ 0.07).[35] This may be caused by the existence of VS or the incorporation
of interstitial metal atoms. In most calculations, a perfect FeS surface
has been emphasized with attention. However, the influence of vacancy
defects on the adsorption, dissociation, and H diffusion behavior
of H2S on the FeS surface is rarely reported. In view of
the metastable nature of FeS, surface defects are very possible to
form in the actual environment. Exploring the adsorption/dissociation
and diffusion processes of H2S on the vacancy-defective
FeS surface by the DFT method can be used to guide the experiment.
Besides, this allows us to further enhance the understanding of the
hydrogen barrier properties of FeS and the influence of vacancy defects
on the subsequent formation and transformation of iron sulfide compounds
from the microscopic perspective.In this work, we investigated
the impact of VFe and
VS on the adsorption and dissociation processes of H2S on the most stable (001) surface of FeS. Besides, the diffusion
energy barrier of the H atom from the surface into the matrix was
calculated. In the end, according to the calculation results, we found
that VS on the FeS(001) surface is extremely difficult
to form and exist in the actual environment.
Results
and Discussion
Properties of FeS(001)
Surfaces
First,
according to the vacancy formation energy formula, we calculate the
formation energies of VFe and VS of the FeS(001)
surface. The results indicate that the formation energies of VFe and VS are 1.34 and 3.91 eV, respectively. The
top and front views of perfect and vacancy-defective FeS(001) surfaces
are shown in Figure a–c. The red dotted lines represent VFe and VS. Among them, VFe is in the second atomic layer
and VS is in the first atomic layer. Since vacancy defects
are vacant in different layered positions, the charge density distribution
is carried out to assess the change of the surface electronic structure.
The charge density distribution of perfect and vacancy-defective FeS(001)
surfaces is shown in Figure d–f. Blue and red represent the areas with lower and
higher charge densities, respectively. The red dotted lines in the
figure represent the location of vacancy defects. It can be clearly
seen that a region with considerably low charge density is formed
around the vacancy defects. Besides, the charge density around VS decreases more obviously, which has a greater influence on
the charge density distribution of the FeS(001) surface.
Figure 1
Top and front
views (a–c) of the surface structures of perfect
and vacancy-defective FeS(001) surfaces. Red dotted lines represent
VFe and VS, respectively. The charge density
of perfect (d), vacancy-defective-Fe (e), and vacancy-defective-S
(f) FeS(001) surfaces.
Top and front
views (a–c) of the surface structures of perfect
and vacancy-defective FeS(001) surfaces. Red dotted lines represent
VFe and VS, respectively. The charge density
of perfect (d), vacancy-defective-Fe (e), and vacancy-defective-S
(f) FeS(001) surfaces.Moreover, we also calculated
that the formation energy of the VS of the third atomic
layer is equal to that of the first atomic
layer, but the result shows that VS in the third atomic
layer has almost no effect on the surface charge density distribution
and the adsorption of H2S. Therefore, our study focused
on the VS located in the first atomic layer and the VFe located in the second atomic layer, which are relatively
close to the surface.
Adsorption of H2S
Figure S1b–d shows the
possible adsorption
sites of different FeS(001) surfaces and dissolution sites in the
matrix. Table S1 lists the related parameters
of different adsorbents after they are stably adsorbed on different
surfaces. Table lists
the structural parameters of the most stable adsorption configurations,
where d (Å) expresses the distance between adsorbents
and the surface. Figure shows the top view, front view, DCD, and adsorption energy of H2S stably adsorbed on perfect and vacancy-defective FeS(001)
surfaces. The yellow and blue areas in the DCD represent the areas
of charge increase and loss, respectively.
Table 1
Structural Parameters of Different
Adsorbates Stably Adsorbed on Different FeS(001) Surfaces
adsorbate
adsorption
spot
d (Å)
αHSH (deg)
d (H–S) (Å)
Eads (eV)
Perfect FeS(001)
H2S
Fe-Ba
2.794
91.346
1.352; 1.352
–0.23
HS
S-Tb
2.157
–
1.357
–1.27
H + HS
Fe-B + S-T
1.665; 2.191
–
1.357
1.63
H + S
Fe-B + S-T
1.681; 1.942
–
–
–0.36
Vacancy-Defective-Fe
FeS(001)
H2S
Fe-B
2.781
91.570
1.352; 1.352
–0.19
HS
S-T
2.188
–
1.359
–1.43
H + HS
Fe-B + S-T
1.509; 2.187
–
1.355
1.33
H + S
Fe-Vc + S-T
1.936; –
–
–
–0.48
Vacancy-Defective-S
FeS(001)
H2S
S-V
–
87.169
1.402; 1.403
–1.21
HS
S-V
–
–
1.376
–4.83
H + HS
Fe-B + S-V
1.601; –
–
1.377
–1.84
H + S
Fe-B + S-V
1.668; –
–
–
–4.96
B: represents the
bridge site.
T: represents
the top site.
V: represents
the location of the
vacancy defect.
Figure 2
Different views of the
stable adsorption texture of H2S on perfect (a), vacancy-defective-Fe
(b), and vacancy-defective-S
(c) FeS(001) surfaces. (d–f) The corresponding DCD.
Different views of the
stable adsorption texture of H2S on perfect (a), vacancy-defective-Fe
(b), and vacancy-defective-S
(c) FeS(001) surfaces. (d–f) The corresponding DCD.B: represents the
bridge site.T: represents
the top site.V: represents
the location of the
vacancy defect.The stable
adsorption site of H2S on perfect and vacancy-defective-FeFeS(001) surfaces are all Fe-B sites. However, on the vacancy-defective-FeFeS(001) surface, the adsorption energy of H2S decreases
slightly, which reveals that the existence of VFe slightly
decreases the adsorption capacity of H2S. Nevertheless,
the presence of VFe does not change the stable adsorption
location and configuration of H2S. The bond length, bond
angle, and the distance between H2S and the surface are
almost identical to those of the perfect surface after H2S was stably adsorbed on the vacancy-defective-FeFeS(001) surface.
Since the adsorption of H2S on the FeS(001) surface itself
is weak physical adsorption, and VFe is in the second atomic
layer, so it is arduous to affect the adsorption process of H2S on the surface. Besides, it can also be seen from the DCD
that the charge transfer between H2S and the vacancy-defective-FeFeS(001) surface is basically the same as that between H2S and the perfect FeS(001) surface.On the vacancy-defective-S
FeS(001) surface, H2S is
stably and vertically adsorbed at the S-V site and has evident hybridization
with the surface. The adsorption energy of H2S increases
to −1.21 eV. As one can see from the DCD, the H atom in H2S takes some electrons from the S atom in H2S,
which is different from the charge transfer of H2S after
it is stably adsorbed on other surfaces. In addition, part of the
charge from the S atom in H2S is also transferred to the
Fe atom of FeS. The transfer of charge further proves that there is
a strong interaction between H2S and the vacancy-defective-S
FeS(001) surface, which may be caused by the reduction of the charge
density prompted by VS as mentioned above.On the
other hand, it can be seen from the structural parameters,
compared with the perfect and vacancy-defective-FeFeS(001) surfaces,
the bond length of H2S increases and the bond angle decreases
on the vacancy-defective-S FeS(001) surface, proposing that these
states may be the precursors of H2S dissociation. This
also provides some evidence from the side that the existence of VS may promote the dissociation process of H2S.
Dissociation of H2S
In
this work, CI-NEB is applied to calculate the maximum dissociation
barrier Ea and the minimum energy paths
(MEPs) of H2S and HS. The adsorption energies and related
parameters of HS + H and S + H after stable co-adsorption on different
surfaces were calculated, as shown in Table . The top views of the ISi, FSi, and TSi configurations of MEPs where H2S and HS dissociate on the vacancy-defective FeS(001) surface are
shown in Figures and 4. Meanwhile, Table lists the Ea and ΔE of the H2S dissociation reaction. The energy
barriers Ea1 and Ea2 as well as the transition state configurations on the perfect
FeS(001) surface in this work are consistent with the previous calculations
of our group (2.06 and 1.23 eV),[27] which
also proves the validity of our work.
Figure 3
Most beneficial path for the dissociation
of H2S on
the vacancy-defective-Fe FeS(001) surface.
Figure 4
Most beneficial
path for the dissociation of H2S on
the vacancy-defective-S FeS(001) surface.
Table 2
Reaction Heat (ΔE) and Dissociation
Energy (Ea) of the
Dissociation Steps of H2S on the Perfect and Vacancy-Defective
FeS(001) Surfaces
perform
ZPE
no ZPE
reaction
coordinate
Ea-ZPE (eV)
ΔE-ZPE (eV)
Ea (eV)
ΔE (eV)
Perfect FeS(001)
P1: IS1 → TS1 → FS1
2.08
1.77
2.19
1.86
P2: IS2 → TS2 → FS2
1.15
0.83
1.19
0.91
Vacancy-Defective-Fe
FeS(001)
P1: IS1 → TS1 → FS1
1.56
1.49
1.90
1.56
P2: IS2 → TS2 → FS2
0.34
–0.06
0.29
–0.05
P3: IS3 → TS3 → FS3
1.25
0.90
1.32
0.95
Vacancy-Defective-S FeS(001)
P1: IS1 → TS1 → FS1
0.07
–0.69
0.13
–0.63
P2: IS2 → TS2 → FS2
0.11
–0.19
0.18
–0.13
Most beneficial path for the dissociation
of H2S on
the vacancy-defective-FeFeS(001) surface.Most beneficial
path for the dissociation of H2S on
the vacancy-defective-S FeS(001) surface.The MEPs of H2S dissociated on the vacancy-defective-FeFeS(001) surface are shown in Figure . The dissociation process of H2S goes through
four steps: (a) H2S is stably adsorbed at the Fe-B site
near VFe by releasing an energy of 0.19 eV. (b) H2S rotates horizontally, breaking an H–S bond away from VFe. Then, the H atom breaks off from H2S, diffusing
to the nearest Fe atom and forms a bond with it, while HS diffuses
directly to the nearest S-T position. The energy barrier to be overcome
for this process is 1.57 eV. (c) The isolated H atom diffuses from
VFe to the interior of the matrix by overcoming an energy
barrier of 0.34 eV. Meanwhile, HS does not change and still adsorbs
at the original S-T site. (d) HS further overcomes an energy barrier
of 1.25 eV and decomposes into S + H. After TS3, the H
atom continues to diffuse into the matrix through VFe and
the S atom is still adsorbed at the S-T site. The stable dissolution
site is the same as that of the H atom separated by H2S
in the first order. It can be seen from Table that compared with the perfect surface,
the dissociation energy barriers Ea1 of
H2S decrease and Ea2 increase
to some extent, but the change is not conspicuous. The results imply
that VFe has little influence on the dissociation reaction
of H2S. It is worth mentioning that although the energy
barrier of H2S dissociation does not change observably,
we found that all H atoms dissociated from H2S can diffuse
into the matrix through VFe, which provides some guidance
for our subsequent study on the H diffusion process from the surface
into the matrix.The MEPs of H2S completely dissociated
on the vacancy-defective-S
FeS(001) surface are shown in Figure . In this process, the dissociation of H2S can be divided into three steps: (a) H2S is stably adsorbed
at the S-V site and the adsorption energy is −1.21 eV. (b)
H2S directly rotates 45° in the horizontal direction
at S-V, and then a H–S bond breaks. The liberated H atom diffuses
to the nearest Fe-B site and gets adsorbed stably, while HS continues
to be adsorbed stably at the original S-V site. The energy barrier
to be overcome for this process is 0.07 eV. (c) HS further overcomes
an energy barrier of 0.11 eV and decomposes into S + H. Similar to
the first H atom, the H atom split from HS also diffuses to the nearest
Fe-B site for stable adsorption, while the S atom continues to be
adsorbed stably at the S-V site.Compared with the perfect surface,
the dissociation energy barriers Ea1 and Ea2 of H2S on the vacancy-defective-S
FeS(001) surface are intensely
reduced, and the whole dissociation process changes from endothermic
to exothermic. The existence of VS greatly promotes the
dissociation process of H2S. Also, H2S can be
dissociated directly through two dehydrogenation processes at the
original adsorption site, making the dissociation process more concise.
The calculations demonstrate that VS has a strong adsorption
capacity for H2S, which is also caused by the extreme decrease
of charge density around VS. The decrease of charge density
may also cause the dissociation of H2S to change into an
exothermic process that can occur spontaneously. In addition, we found
that after H2S is completely disintegrated, the S atom
fills the previous VS, thus forming the perfect surface.
According to this characteristic, we later put forward an evolution
mechanism of sulfur vacancies on the FeS(001) surface.
Diffusion of H Atoms
H atoms generated
by H2S dissociation adsorb on the FeS(001) surface. By
studying the diffusion mechanism of H atoms from the surface into
the matrix by the DFT method, we can not only explore the hydrogen
resistance performance of FeS but also further examine the influence
mechanism of vacancy defects on H diffusion from the microscopic perspective.Tables S2 and S3 list the Eads and Edis of H atoms and
all possible diffusion paths of individual H atoms on the perfect
FeS(001) surface. Table shows the Eads and Edis of H atoms on vacancy-defective FeS(001) surfaces
and the matrix. Except for the S-V site, the Eads and Edis of H atoms on the
perfect and vacancy-defective surfaces are both positive, which indicates
that the adsorption/dissolution process of H atoms is not stable.
At the S-V site, the adsorption energy of the H atom reaches −0.84
eV, which indicates that VS has a great adsorption capacity
for H atoms. As mentioned above, this is also caused by the decrease
of the charge density around VS.
Table 3
Adsorption
Energy of the H Atom at
Different Adsorption and Dissolution Sites on the Vacancy-Defective
FeS(001) Surfaces
surfaces
adsorption
site
Eads (eV)
vacancy-defective-Fe
FeS(001)
S-T
0.69
Fe-B
0.71
Fe-L
0.68
S-L
0.59
vacancy-defective-S FeS(001)
S-T
0.94
S-V
–0.84
S-L
0.73
Subsequently,
we calculate all possible diffusion paths for H atoms
on vacancy-defective FeS(001) surfaces. Figures S2, 5, and 6 show
the MEPs of individual H atoms diffusing from the surface to the matrix
on vacancy-defective FeS(001) surfaces. The illustration shows top
and front views of the corresponding adsorption/dissolution locations
and the configuration of the transition state. Table lists Ea and
ΔE with and without ZPE correction for all
possible diffusion paths of H atoms on the FeS(001) surface. The bold
fonts in Table are Ea and ΔE of the rate-limiting
steps for the H diffusion process into the matrix.
Figure 5
MEPs of the H diffusion
process on the vacancy-defective-Fe FeS(001)
surface.
Figure 6
MEPs of the H diffusion process on the vacancy-defective-S
FeS(001)
surface.
Table 4
Reaction Heat (ΔE) and Dissolution Energy Barrier (Edif) for All Possible H Diffusion Paths on Vacancy-Defective
FeS(001)
Surfaces
perform
ZPE
no ZPE
diffusion
pathway steps
Edif-ZPE (eV)
ΔE-ZPE (eV)
Edif (eV)
ΔE (eV)
Vacancy-Defective-Fe FeS(001)
P1: S-T → Fe-B
0.45
–0.05
0.51
0.02
P2: S-T → Fe-L
0.49
–0.07
0.55
–0.01
P3: Fe-B → Fe-L
0.26
–0.03
0.27
–0.03
P4: Fe-L → S-L
0.24
–0.03
0.22
–0.09
Vacancy-Defective-S FeS(001)
P1: S-T → S-V
0.12
–1.82
0.14
–1.78
P2: S-V → S-L
1.89
1.61
1.96
1.57
MEPs of the H diffusion
process on the vacancy-defective-FeFeS(001)
surface.MEPs of the H diffusion process on the vacancy-defective-S
FeS(001)
surface.On the perfect FeS(001) surface, the MEPs
of H diffusion are S-T
to Fe-B to Fe-L to S-L. The diffusion energy barrier Ea of the rate-limiting step of H diffusing into the matrix
is 1.12 eV, which is not very large, thus H atoms can diffuse from
the perfect FeS(001) surface into the matrix under certain conditions.
The diffusion process of H atoms on the vacancy-defective-FeFeS(001)
surface is shown in Figure . According to the diffusion barrier, the MEPs of H diffusion
are S-T to Fe-B to Fe-L to S-L, which is the same as H diffusion on
the perfect surface. However, the energy barrier Ea of the rate-limiting step of diffusion is only 0.26
eV, which is overwhelmingly lower than that of the perfect surface
(1.12 eV). It can be clearly seen from Figure that the existence of VFe provides
an expedited path for H atoms in the diffusion process. Thus, the
diffusion process of H atoms is smoother and the diffusion energy
barrier is lower. This is consistent with the steps of H diffusion
in the H2S dissociation process on the vacancy-defective-FeFeS(001) surface calculated above, which further proves the rationality
of this theory.The H diffusion process on the vacancy-defective-S
FeS(001) surface
is shown in Figure . The adsorption sites of H atoms on the vacancy-defective-S FeS(001)
surface are S-T and S-V. After calculation, we found that the diffusion
of H atoms from S-T to S-V only needs to overcome a very small energy
barrier of 0.12 eV, and unlike the S-T site, the adsorption of H atoms
at the S-V site is an exothermic process. Therefore, it can be inferred
that H atoms are very easy to aggregate near VS on the
vacancy-defective-S FeS(001) surface. The energy barrier of H atom
diffusion from S-V into the matrix is 1.89 eV, which is higher than
that of the rate-limiting step on the perfect FeS(001) surface (1.12
eV). Different from VFe, the existence of VS does not provide a smoother path for H diffusion. VS binds
the H atom to the vacancy defect, thus making the diffusion behavior
of H atoms into the matrix more difficult, which is also caused by
the decrease of charge density around VS.In summary,
compared with the perfect FeS(001) surface, VFe and VS have different influence mechanisms on the H atom
diffusion process. VFe provides a smoother path for H atoms
and considerably reduces the energy barrier of H diffusion into the
matrix. On the other hand, the presence of VS binds H atoms
to VS and hinders the diffusion of H atoms from the surface
to the matrix.
Energy Barrier Split
The influence
of vacancy defects on the H2S dissociation and H diffusion
process is shown in Figure . Compared with the perfect surface, VFe can promote
the dissociation process of H2S but hinder the dissociation
of HS, while VS has an extremely significant promoting
effect on both H2S and HS. In particular, VS can also change the dissociation process of H2S from
an endothermic reaction, which is difficult to occur, to an exothermic
reaction, which can proceed spontaneously. Furthermore, both VFe and VS can promote the H diffusion process into
the matrix, and the promotion effect of VFe is particularly
significant.
Figure 7
Diffusion barrier (Edif) of
H atoms
and the dissociation barrier (Ea) of H2S on perfect, vacancy-defective-Fe, and vacancy-defective-S
FeS(001) surfaces.
Diffusion barrier (Edif) of
H atoms
and the dissociation barrier (Ea) of H2S on perfect, vacancy-defective-Fe, and vacancy-defective-S
FeS(001) surfaces.According to the energy
barrier splitting formula, each part contributes
to the dissociation barrier Ea, as shown in Table . Compared with the perfect surface, the
change of ΔEslab, ETS1HS, ETS1H, EIS1H, and Eint-H···HS on the vacancy-defective-FeFeS(001) surface is small, but the change
of ΔEdef-H is
obvious, which decreases by 0.46 eV. This is the main reason for the
decrease of the dissociation barrier Ea of H2S. On the vacancy-defective-S FeS(001) surface,
the changes of ETS1HS, ETS1H, EIS1H, and Eint-H···HS are all significant,
and their contribution together reduces the dissociation barrier Ea of H2S. It is worth mentioning
that compared with the perfect and vacancy-defective-FeFeS(001) surfaces,
the contribution of ΔEslab and ΔEdef-H to dissociation barrier Ea is very small, which indicates that the slab
model and H2S can move from the initial state to the transition
state with little energy absorption. This also proves from the side
that the configuration of H2S after stable adsorption at
the S vacancy defect mentioned above may be the precursor of H2S dissociation. For the dissociation of HS, on the vacancy-defective-Fe
surface, ΔEdef-HS decreases
by 1.48 eV, which contributes the most to the dissociation barrier Ea. However, the interaction energy between H
and S has a great positive contribution to the dissociation barrier Ea, which can almost cancel out the negative
contribution of ΔEdef-H, so that the change of Ea is
not very obvious. On the vacancy-defective-S surface, the changes
of each part are manifested, which together lead to the decrease of
the dissociation barrier Ea.
Table 5
Contribution of Each Part to the Dissociation Ea of H2S and HS
ΔEslab (eV)
ΔEdef-H2S (eV)
ETS1HS (eV)
ETS1H (eV)
EIS1H2S (eV)
Eint-H···HS (eV)
Perfect FeS(001)
0.24
3.44
–0.76
0.66
–0.23
1.73
Vacancy-Defective-Fe FeS(001)
0.22
2.98
–0.95
0.57
–0.19
1.45
Vacancy-Defective-S FeS(001)
–0.02
0.02
–4.47
2.16
–1.21
–1.17
Based on the research results, we proposed
an evolution mechanism
of sulfur vacancies on the FeS(001) surface, as shown in Figure . In our opinion,
VS is very difficult to exist on the FeS(001) surface due
to the following reasons: (a) The formation energy of VS is very large and reaches 3.91 eV, which indicates that in the actual
environment, it is difficult to form VS on the FeS(001)
surface under external conditions such as temperature and pressure.
(b) Even if VS was formed on the surface, H2S in the environment would continue to spontaneously adsorb and dissociate
at VS, so as to fill VS and form the perfect
surface. Therefore, according to the calculation results, we propose
that there is almost no VS on the FeS(001) surface in a
corrosive environment and the vast majority of VS may exist
within the matrix.
Figure 8
Evolution mechanism of S vacancies on the FeS(001) surface.
Evolution mechanism of S vacancies on the FeS(001) surface.
Computational Details
Models
The perfect and vacancy-defective
FeS(001) surfaces are created through an utterly relaxed volume structure
using Materials Studio (MS).[36] As shown
in Figure S1a, the slab model of the FeS(001)
surface adopts a 2 × 2 supercell structure and is equipped with
nine atomic layers to adapt to the relaxation expansion of the first
layer. An additional 15 Å vacuum layer is placed to ensure separation.[37,38] Zero-point energy (ZPE) correction is performed for the adsorption
energy and dissociation energy barriers.[39,40] In all calculations involving the interaction of H2S
and the dissociated atoms with the FeS(001) surface, the adsorbate
and top three layers of atoms are totally allowed to relax, while
the remaining atomic layers are fixed.
Methods
All of the calculations are
executed using the Vienna Ab-initio Simulation Package (VASP).[41−45] The Perdew–Burke–Ernzerhof (PBE) generalized gradient
approximation (GGA) exchange–correlation functional using the
projector augmented wave method is applied.[46,47] We added the spin polarization parameters in the calculation process,
which had little effect on the calculation of the perfect and vacancy-defective-FeFeS(001) surfaces but had a great influence on the calculation of
the vacancy-defective-S FeS(001) surface. Since the conventional DFT
method cannot accurately describe the weak vdW force between atoms
separated by vacuum, the DFT-D2 method is used to correct the weak
vdW force between FeS layers in this study, which has been confirmed
in other research studies.[27] When a cut-off
energy of 400 eV is used, the total energy of FeS(001) converges.
The K-points are set to be 11 × 11 × 11
for H2S in vacuum and bulk FeS optimizations, while 5 ×
5 × 1 is applied for FeS(001) surface calculations. The convergence
standards of energy and force are 10–5 eV and 0.05
eV·Å–1, respectively.The formation
energy of vacancy defects is defined by the following formula[48]Here, EV and EFeS denote the total energy of the FeS(001)
model containing VFe/VS and the perfect surface,
respectively. The μi represents the atomic
chemical potential introduced by
the formation of VFe/VS.The transition
state of the dissociation process of H2S/HS and the H diffusion
process is probed by a climbing image nudged
elastic band (CI-NEB) method,[49] and the
frequency of the transition state is checked to make sure there is
only one virtual frequency. The formulas for adsorption/dissolution
energy (Eads/dis), ZPE correction, differential
charge density (DCD), activation energy barrier (Ea), reaction heat (ΔE), and energy
barrier splitting are all described in our published papers.[50]
Conclusions
Vacancy
defects are inherent point defects of materials. Two kinds
of vacancy defects on the FeS(001) surface can affect the adsorption/dissociation
of H2S and the H diffusion process. In our work, the impact
of VFe and VS on the adsorption/dissociation
and diffusion of H2S was calculated using the DFT-D2 method.
In our calculation, VFe did not change the stable adsorption
site and adsorption configuration of H2S but promoted the
dissociation process of H2S. Compared with the perfect
surface (2.08 eV), the dissociation energy barrier of H2S was reduced to 1.56 eV. Meanwhile, VFe also slightly
hindered the dissociation process of HS. VS significantly
promotes the adsorption and dissociation process of H2S,
which not only reduces the dissociation energy barriers of H2S and HS to 0.07 and 0.11 eV, respectively, but also changes the
dissociation process of H2S from an endothermic process
to a spontaneous exothermic one. In addition, VFe and VS have different influence mechanisms on the H atom diffusion
process. VFe provides a barrier-free diffusion channel
for the diffusion process of H atoms, so the H diffusion process is
more accessible. But the presence of VS binds H atoms to
VS and hinders the diffusion of H atoms from the surface
to the matrix. Compared with the perfect FeS(001) surface, the energy
barriers of the rate-limiting step of H diffusion from the surface
into the matrix on the vacancy-defective-Fe and vacancy-defective-S
FeS(001) surfaces are 0.26 and 1.89 eV, respectively. In the end,
according to the calculation results, we propose that there is almost
no S vacancy defect existing on the FeS(001) surface in a corrosive
environment. Our research provides a theoretical basis for understanding
the influence of vacancy defects on the adsorption, dissociation,
and diffusion processes of H2S in FeS. Meanwhile, it can
also provide a theoretical basis for the formation, transformation,
and further corrosion of iron sulfide compounds. This may encourage
scholars to conduct further experimental research and verification.
Authors: Francis R Livens; Mark J Jones; Amanda J Hynes; John M Charnock; J Fred W Mosselmans; Christoph Hennig; Helen Steele; David Collison; David J Vaughan; Richard A D Pattrick; Wendy A Reed; Lesley N Moyes Journal: J Environ Radioact Date: 2004 Impact factor: 2.674