| Literature DB >> 28868762 |
Emanuele Marino1, Thomas E Kodger1, Ryan W Crisp2, Dolf Timmerman1, Katherine E MacArthur3, Marc Heggen3, Peter Schall1.
Abstract
Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We utilized atomically thin semiconductor nanoplatelets as a convenient platform for studying, both microscopically and spectroscopically, the development of defects during ligand exchange with the conductive ligands Na4 SnS4 and (NH4 )4 Sn2 S6 . These defects can be repaired via mild chemical or thermal routes, through the addition of L-type ligands or wet annealing, respectively. This results in a higher-quality, conductive, colloidally stable nanomaterial that may be used as the active film in optoelectronic devices.Entities:
Keywords: ligand exchange; nanoplatelets; nanostructures; quantum dots; thiostannates
Year: 2017 PMID: 28868762 PMCID: PMC5656888 DOI: 10.1002/anie.201705685
Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN: 1433-7851 Impact factor: 15.336
Figure 1CdSe NPs before and after ligand exchange (LE) with Na4SnS4. a1–a5) Bright‐field STEM and a6) high‐resolution HAADF images of pristine NPs with OA as the ligand. b) Absorbance (solid lines) and PL (dotted lines) spectra of pristine and LE NPs. The PL intensity of the ligand‐exchanged NPs has been multiplied by 500. c) DC conductivity measurements on thin films of pristine and LE NPs. d1–d5) Bright‐field STEM and d6) high‐resolution HAADF images of damaged NPs with (NH4)4Sn2S6 as the ligand. Black scale bars: 20 nm; white scale bars: 5 nm.
Figure 2Healing defects in the NP crystal lattice with DMP. a1–a6) Bright‐field STEM images of repaired NPs after DMP treatment with Na4SnS4 as the ligand. Scale bars: 20 nm (a1–a5) and 200 nm (a6). b) Absorbance (solid lines, normalized) and PL (dotted lines) spectra of NPs after LE and after DMP treatment. c) Wet annealing (WA) of NPs at 100 °C. Absorbance (solid lines, normalized) and PL (dotted lines, normalized) spectra for pristine NPs, after LE with Na4SnS4, and during WA. d) Bright‐field STEM images of NPs after 5 min (d1), 20 min (d2), and 60 min (d3) of WA. Scale bars: 50 nm.
Figure 3Analysis of the photoluminescence (PL) of nanoplatelets. a) Normalized PL spectra of pristine nanoplatelets with Lorentzian and Gaussian fits (gray lines) for the band‐edge and trap state emissions, respectively. Note the log/lin scaling. b) Normalized PL spectra of nanoplatelets after LE and after DMP treatment with Gaussian fits. c) Normalized PL spectra of nanoplatelets during WA. d) Nanoplatelet PLQYs for band‐edge (circles) and defect band (squares) emissions for all treatments.
Figure 4Maximum charge carrier mobility values for treated NPs as measured by TRMC compared to PLQY results for the same samples. The mobility values are given by the maximum of the photoconductance transient shown in the inset when extrapolating for low incident photon flux. Inset: Photoconductance transients for pristine NPs. The incident photon flux increases from the black to the gray curves.