| Literature DB >> 28717501 |
Kartik Chandra Mondal1, Sudipta Roy1, Birger Dittrich2, Bholanath Maity3, Sayan Dutta3, Debasis Koley3, Suresh Kumar Vasa4, Rasmus Linser4, Sebastian Dechert1, Herbert W Roesky1.
Abstract
Silicondiselenide is a semiconductor and exists as an insoluble polymer (SiSe2) n which is prepared by reacting elemental silicon with selenium powder in the temperature range of 400-850 °C. Herein, we report on the synthesis, isolation, and characterization of carbene stabilized molecular silicondiselenide in the form of (cAAC)2Si2Se4 (3) [cAAC = cyclic alkyl(amino)carbene]. 3 is synthesized via reaction of diatomic silicon(0) compound (cAAC)2Si2 (2) with black selenium powder at -78 °C to room temperature. The intensely orange colored compound 3 is soluble in polar organic solvents and stable at room temperature for a month under an inert atmosphere. 3 decomposes above 245 °C. The molecular structure of 3 has been confirmed by X-ray single crystal diffraction. It is also characterized by UV-vis, IR, Raman spectroscopy and mass spectrometry. The stability, bonding, and electron density distributions of 3 have been studied by theoretical calculations.Entities:
Year: 2015 PMID: 28717501 PMCID: PMC5500843 DOI: 10.1039/c5sc01516b
Source DB: PubMed Journal: Chem Sci ISSN: 2041-6520 Impact factor: 9.825
Scheme 1Schematic representation of some forms of SiSe2.
Scheme 2Synthesis of compound 3 from 2. The energy term in parenthesis is ΔG (kcal mol–1) at M06-2X/TZVP/SMD//M06-2X/SVP level of theory for 2a to 3a.
Scheme 3Resonance structures of compound 3.
Fig. 1Molecular structures of compounds 2a (top), 3a (bottom). H atoms are omitted for clarity. Selected experimental [calculated at R-M06-2X/SVP for the singlet state] bond lengths [Å] and angles [°] (as averages of two independent molecules): for 2a/3a; C1–Si1A 1.887(4)/1.931(4) [1.877/1.947], Si1A–Si1A′ 2.254(2)/3.056 [2.244/3.083], C1–N1 1.342(5)/1.311(5) [1.343/1.309]; C1–Si1A–Si1A′ 103.67(14)/123.94 [102.16/123.51]. For 3a; Si1–Se1 2.2874(10) [2.318], Si1–Se1′ 2.3046(10) [2.319], Si1–Se2 2.1510(10) [2.156]; Se1–Si1–Se1′ 96.55(4) [96.52], Si1–Se1–Si1′ 83.45(4) [83.32], C1–Si1–Se2 97.86(11) [96.58], C1–Si1–Se1 109.85(11) [107.85], C1–Si1–Se1′ 113.81(11) [113.33], Se2–Si1–Se1 119.05(4) [121.1], Se2–Si1–Se1′ 120.35(4) [121.67].
Fig. 2(Top) Computed KS-MO of 3a at R-M06-2X/TZVP//R-M06-2X/SVP level. Hydrogen atoms are omitted for clarity. (bottom) Laplacian distribution [∇2 ρ(r)] in N1–C1–Si1 (left) and C1–Si1–Se2 plane (right) of 3a. Solid lines indicate the areas of charge concentration (∇2 ρ(r) < 0) while dotted lines mean the charge depletion (∇2 ρ(r) > 0). The range of contours of the Laplacian is –8 × 102 to +8 × 102. Solid lines connecting atomic nuclei (black) are the bond paths and those lines (purple) separating the atomic basins indicates the zero-flux surface crossing the molecular plane.
Fig. 3(a) Experimental EI-mass spectrum of compound 3a.