Literature DB >> 18451858

The missing memristor found.

Dmitri B Strukov1, Gregory S Snider, Duncan R Stewart, R Stanley Williams.   

Abstract

Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.

Entities:  

Year:  2008        PMID: 18451858     DOI: 10.1038/nature06932

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  360 in total

1.  A biophysically-based neuromorphic model of spike rate- and timing-dependent plasticity.

Authors:  Guy Rachmuth; Harel Z Shouval; Mark F Bear; Chi-Sang Poon
Journal:  Proc Natl Acad Sci U S A       Date:  2011-11-16       Impact factor: 11.205

2.  Observation of conducting filament growth in nanoscale resistive memories.

Authors:  Yuchao Yang; Peng Gao; Siddharth Gaba; Ting Chang; Xiaoqing Pan; Wei Lu
Journal:  Nat Commun       Date:  2012-03-13       Impact factor: 14.919

3.  A polysaccharide bioprotonic field-effect transistor.

Authors:  Chao Zhong; Yingxin Deng; Anita Fadavi Roudsari; Adnan Kapetanovic; M P Anantram; Marco Rolandi
Journal:  Nat Commun       Date:  2011-09-20       Impact factor: 14.919

4.  Robust spin crossover and memristance across a single molecule.

Authors:  Toshio Miyamachi; Manuel Gruber; Vincent Davesne; Martin Bowen; Samy Boukari; Loïc Joly; Fabrice Scheurer; Guillaume Rogez; Toyo Kazu Yamada; Philippe Ohresser; Eric Beaurepaire; Wulf Wulfhekel
Journal:  Nat Commun       Date:  2012-07-03       Impact factor: 14.919

5.  Complementary resistive switches for passive nanocrossbar memories.

Authors:  Eike Linn; Roland Rosezin; Carsten Kügeler; Rainer Waser
Journal:  Nat Mater       Date:  2010-04-18       Impact factor: 43.841

6.  'Memristive' switches enable 'stateful' logic operations via material implication.

Authors:  Julien Borghetti; Gregory S Snider; Philip J Kuekes; J Joshua Yang; Duncan R Stewart; R Stanley Williams
Journal:  Nature       Date:  2010-04-08       Impact factor: 49.962

7.  Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system.

Authors:  Shunsuke Fukami; Chaoliang Zhang; Samik DuttaGupta; Aleksandr Kurenkov; Hideo Ohno
Journal:  Nat Mater       Date:  2016-02-15       Impact factor: 43.841

8.  Memristors in the Venus flytrap.

Authors:  Alexander G Volkov; Victoria Forde-Tuckett; Jada Reedus; Colee M Mitchell; Maya I Volkova; Vladislav S Markin; Leon Chua
Journal:  Plant Signal Behav       Date:  2014

9.  Memristors in the electrical network of Aloe vera L.

Authors:  Alexander G Volkov; Jada Reedus; Colee M Mitchell; Clayton Tucket; Victoria Forde-Tuckett; Maya I Volkova; Vladislav S Markin; Leon Chua
Journal:  Plant Signal Behav       Date:  2014

10.  Memory elements in the electrical network of Mimosa pudica L.

Authors:  Alexander G Volkov; Jada Reedus; Colee M Mitchell; Clayton Tuckett; Maya I Volkova; Vladislav S Markin; Leon Chua
Journal:  Plant Signal Behav       Date:  2014
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