| Literature DB >> 28106047 |
Daria Kondrashova1,2, Alexander Lauerer1, Dirk Mehlhorn1, Hervé Jobic3, Armin Feldhoff4, Matthias Thommes5, Dipanjan Chakraborty6, Cedric Gommes7, Jovana Zecevic7, Petra de Jongh7, Armin Bunde2, Jörg Kärger1, Rustem Valiullin1.
Abstract
Nanoporous silicon produced by electrochemical etching of highly B-doped p-type silicon wafers can be prepared with tubular pores imbedded in a silicon matrix. Such materials have found many technological applications and provide a useful model system for studying phase transitions under confinement. This paper reports a joint experimental and simulation study of diffusion in such materials, covering displacements from molecular dimensions up to tens of micrometers with carefully selected probe molecules. In addition to mass transfer through the channels, diffusion (at much smaller rates) is also found to occur in directions perpendicular to the channels, thus providing clear evidence of connectivity. With increasing displacements, propagation in both axial and transversal directions is progressively retarded, suggesting a scale-dependent, hierarchical distribution of transport resistances ("constrictions" in the channels) and of shortcuts (connecting "bridges") between adjacent channels. The experimental evidence from these studies is confirmed by molecular dynamics (MD) simulation in the range of atomistic displacements and rationalized with a simple model of statistically distributed "constrictions" and "bridges" for displacements in the micrometer range via dynamic Monte Carlo (DMC) simulation. Both ranges are demonstrated to be mutually transferrable by DMC simulations based on the pore space topology determined by electron tomography.Entities:
Year: 2017 PMID: 28106047 PMCID: PMC5247748 DOI: 10.1038/srep40207
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1(a) Surface etching by hydrofluoric acid in combination with electric current applied to doped silicon wafers generates a system of channel pores. (b) Electron microscopy images of the pore entrances. (c) Idealized view with indicated pSi film extension, the film thickness is 100 μm. (d) A cross-sectional view of the pore network.
Figure 2(a) Primary data of Quasi-Elastic Neutron Scattering (half-width at half-maximum (HWHM) of energy distribution). The vertical green line indicates the lower limit in the scattering vectors (and, correspondingly, the upper limit in the displacements) considered in a previous study42. (b) Mean square displacements in molecular dynamics simulations in free liquid (triangles), and parallel (open circles) and perpendicular (filled circles) to main channel direction. (c) The topological information provided by 3d electron tomography. (d) Orientation-dependent diffusivities evidenced by PFG NMR measurements performed by varying the direction of transport observation, i.e. by orientating pSi film with respect to the direction of the magnetic field gradient along which the molecular displacements are probed53. The solid line is the best fit of Eq. (7) to the experimental data. (e) Scheme of the simulation matrix used for short-range displacements based on the topology of (c). (f) Simplified simulation network (only 2d cross-section is shown) with randomly distributed “bridges” and “constrictions”. The squares indicated on top left panel show the four variants in which the unit cells of the simulation network may occur, namely accommodating a straight channel segment only (top), a channel segment with a connection (a “bridge” to an adjacent channel, centre right), a channel segment with “constriction” (centre left) and both “bridge” and “constriction” (bottom). From the theoretical perspective, the model is analogue to random walks between the lattice nodes (red dots), with spatially-distributed hopping times (or respective transport resistances as schematically shown by the different arch heights (in blue) in the top right figure). The lower panel indicates an integrated 1d profile for diffusion perpendicular to the channel direction. (g) Visualizing displacement-dependent diffusivities: increasing displacements are accompanied with an increase in the maximum values of transport resistances, in parallel with a decrease in their distribution widths as indicated by changing the arch-height distributions (increase of the length scale is analogue of coarse-graining of the lattice in (f), leading to averaging of the hopping times).
Figure 3PFG NMR diffusivities at room temperature (20 °C) with TEHOS in transversal (open triangles) and axial (full triangles) directions.
The QENS diffusivities (cyclohexane, 20 °C) in axial and transversal directions (full and open black squares) approach, essentially, that in the free liquid (see Fig. 2a). The symbol sizes in the figure are representatives of the experimental error for the diffusivities measured. Dynamic Monte Carlo simulation results determined by using the pore space model shown in Fig. 2f (left) are represented by dotted and continuous lines for the diffusivities in axial and transversal directions, respectively, those obtained with the pore space model as resulting from electron tomography (Fig. 2e) by diamonds, where filled and open symbols refer to the diffusivities in axial and transversal directions. The broken line shows the scale dependence of the diffusivity in a system with hierarchically organized transport resistances (Fig. 2f (right) and 2 g) giving rise to a time exponent κ = 0.87 in Eqs (3) and (4).