Literature DB >> 27877958

Microwave magnetoresistance in Ge:Mn nanowires and nanofilms.

Roman Morgunov1, Yoshifumi Tanimoto2, Olga Kazakova3.   

Abstract

The Lorentzian and spin-scattering components of magnetoresistance were found and distinguished in Ge:Mn thin films. The suppression of microwave magnetoresistance by the limitation of the dimensionality of Ge nanowires doped with Mn has been revealed. Spin-wave resonance in the long-ordered magnetic state and ferromagnetic resonance in GeMn clusters have been detected.

Entities:  

Keywords:  magnetic diluted semiconductors; magnetoresistance; nanostructures; spin dynamics; spin waves

Year:  2008        PMID： 27877958      PMCID： PMC5099715          DOI： 10.1088/1468-6996/9/2/024207

Source DB:  PubMed          Journal:  Sci Technol Adv Mater        ISSN： 1468-6996            Impact factor:   8.090


  6 in total

1.  A group-IV ferromagnetic semiconductor: MnxGe1-x.

Authors:  Y D Park; A T Hanbicki; S C Erwin; C S Hellberg; J M Sullivan; J E Mattson; T F Ambrose; A Wilson; G Spanos; B T Jonker
Journal:  Science       Date:  2002-01-25       Impact factor: 47.728

2.  Tenfold magnetoconductance in a nonmagnetic metal film

Authors: 
Journal:  Phys Rev Lett       Date:  2000-07-03       Impact factor: 9.161

3.  Dilute magnetic semiconductors: Functional ferromagnets.

Authors:  Tomasz Dietl
Journal:  Nat Mater       Date:  2003-10       Impact factor: 43.841

4.  Novel germanium-based magnetic semiconductors.

Authors:  F Tsui; L He; L Ma; A Tkachuk; Y S Chu; K Nakajima; T Chikyow
Journal:  Phys Rev Lett       Date:  2003-10-24       Impact factor: 9.161

5.  High-Curie-temperature ferromagnetism in self-organized Ge1-xMnx nanocolumns.

Authors:  Matthieu Jamet; André Barski; Thibaut Devillers; Valier Poydenot; Romain Dujardin; Pascale Bayle-Guillemaud; Johan Rothman; Edith Bellet-Amalric; Alain Marty; Joël Cibert; Richard Mattana; Serge Tatarenko
Journal:  Nat Mater       Date:  2006-07-09       Impact factor: 43.841

6.  Non-saturating magnetoresistance in heavily disordered semiconductors.

Authors:  M M Parish; P B Littlewood
Journal:  Nature       Date:  2003-11-13       Impact factor: 49.962
  6 in total

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