Literature DB >> 14611374

Novel germanium-based magnetic semiconductors.

F Tsui1, L He, L Ma, A Tkachuk, Y S Chu, K Nakajima, T Chikyow.   

Abstract

Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high T(C) and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum T(C) achieved in the semiconducting materials is approximately 270 K at a composition of Co0.12Mn0.03Ge0.85.

Entities:  

Year:  2003        PMID: 14611374     DOI: 10.1103/PhysRevLett.91.177203

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Microwave magnetoresistance in Ge:Mn nanowires and nanofilms.

Authors:  Roman Morgunov; Yoshifumi Tanimoto; Olga Kazakova
Journal:  Sci Technol Adv Mater       Date:  2008-05-20       Impact factor: 8.090

2.  Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1-x nanomesh.

Authors:  Tianxiao Nie; Jianshi Tang; Xufeng Kou; Yin Gen; Shengwei Lee; Xiaodan Zhu; Qinglin He; Li-Te Chang; Koichi Murata; Yabin Fan; Kang L Wang
Journal:  Nat Commun       Date:  2016-10-20       Impact factor: 14.919

3.  Room Temperature Ferromagnetic Mn:Ge(001).

Authors:  George Adrian Lungu; Laura Elena Stoflea; Liviu Cristian Tanase; Ioana Cristina Bucur; Nicoleta Răduţoiu; Florin Vasiliu; Ionel Mercioniu; Victor Kuncser; Cristian-Mihail Teodorescu
Journal:  Materials (Basel)       Date:  2013-12-27       Impact factor: 3.623

4.  Room Temperature Ferromagnetic, Anisotropic, Germanium Rich FeGe(001) Alloys.

Authors:  George A Lungu; Nicoleta G Apostol; Laura E Stoflea; Ruxandra M Costescu; Dana G Popescu; Cristian M Teodorescu
Journal:  Materials (Basel)       Date:  2013-02-21       Impact factor: 3.623

Review 5.  Mn-doped Ge and Si: A Review of the Experimental Status.

Authors:  Shengqiang Zhou; Heidemarie Schmidt
Journal:  Materials (Basel)       Date:  2010-11-26       Impact factor: 3.623

  5 in total

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