| Literature DB >> 14611374 |
F Tsui1, L He, L Ma, A Tkachuk, Y S Chu, K Nakajima, T Chikyow.
Abstract
Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high T(C) and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum T(C) achieved in the semiconducting materials is approximately 270 K at a composition of Co0.12Mn0.03Ge0.85.Entities:
Year: 2003 PMID: 14611374 DOI: 10.1103/PhysRevLett.91.177203
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161