| Literature DB >> 16845420 |
Matthieu Jamet1, André Barski, Thibaut Devillers, Valier Poydenot, Romain Dujardin, Pascale Bayle-Guillemaud, Johan Rothman, Edith Bellet-Amalric, Alain Marty, Joël Cibert, Richard Mattana, Serge Tatarenko.
Abstract
The emerging field of spintronics would be dramatically boosted if room-temperature ferromagnetism could be added to semiconductor nanostructures that are compatible with silicon technology. Here, we report a high-TC (>400K) ferromagnetic phase of (Ge,Mn) epitaxial layer. The manganese content is 6%, and careful structural and chemical analyses show that the Mn distribution is strongly inhomogeneous: we observe eutectoid growth of well-defined Mn-rich nanocolumns surrounded by a Mn-poor matrix. The average diameter of these nanocolumns is 3nm and their spacing is 10nm. Their composition is close to Ge(2)Mn, which corresponds to an unknown germanium-rich phase, and they have a uniaxially elongated diamond structure. Their Curie temperature is higher than 400K. Magnetotransport reveals a pronounced anomalous Hall effect up to room temperature. A giant positive magnetoresistance is measured from 7,000% at 30K to 200% at 300K and 9T, with no evidence of saturation.Entities:
Year: 2006 PMID: 16845420 DOI: 10.1038/nmat1686
Source DB: PubMed Journal: Nat Mater ISSN: 1476-1122 Impact factor: 43.841