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Literature DB >> 27206245

High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma Treatment.

Jaewoo Shim¹, Aely Oh¹, Dong-Ho Kang¹, Seyong Oh¹, Sung Kyu Jang², Jaeho Jeon², Min Hwan Jeon², Minwoo Kim², Changhwan Choi³, Jaehyeong Lee¹, Sungjoo Lee², Geun Young Yeom², Young Jae Song², Jin-Hong Park¹.

Abstract

A high-performance ReS2 -based thin-film transistor and photodetector with high on/off-current ratio (10(4) ), high mobility (7.6 cm(2) V(-1) s(-1) ), high photoresponsivity (2.5 × 10(7) A W(-1) ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.

Entities: Chemical

Keywords: O2 plasma; ReS2; photodetectors; thin-film transistors

Year: 2016 PMID： 27206245 DOI： 10.1002/adma.201601002

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

17 in total

Review 1. Promises and prospects of two-dimensional transistors.

Authors: Yuan Liu; Xidong Duan; Hyeon-Jin Shin; Seongjun Park; Yu Huang; Xiangfeng Duan
Journal: Nature Date: 2021-03-03 Impact factor: 49.962

Review 2. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications.

Authors: Balakrishnan Kirubasankar; Yo Seob Won; Laud Anim Adofo; Soo Ho Choi; Soo Min Kim; Ki Kang Kim
Journal: Chem Sci Date: 2022-05-18 Impact factor: 9.969

Review 3. A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices.

Authors: Hari Singh Nalwa
Journal: RSC Adv Date: 2020-08-19 Impact factor: 4.036

4. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

Authors: Jaewoo Shim; Seyong Oh; Dong-Ho Kang; Seo-Hyeon Jo; Muhammad Hasnain Ali; Woo-Young Choi; Keun Heo; Jaeho Jeon; Sungjoo Lee; Minwoo Kim; Young Jae Song; Jin-Hong Park
Journal: Nat Commun Date: 2016-11-07 Impact factor: 14.919

Review 5. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

Authors: Chuanhui Gong; Yuxi Zhang; Wei Chen; Junwei Chu; Tianyu Lei; Junru Pu; Liping Dai; Chunyang Wu; Yuhua Cheng; Tianyou Zhai; Liang Li; Jie Xiong
Journal: Adv Sci (Weinh) Date: 2017-10-06 Impact factor: 16.806

6. Realization of vertical metal semiconductor heterostructures via solution phase epitaxy.

Authors: Xiaoshan Wang; Zhiwei Wang; Jindong Zhang; Xiang Wang; Zhipeng Zhang; Jialiang Wang; Zhaohua Zhu; Zhuoyao Li; Yao Liu; Xuefeng Hu; Junwen Qiu; Guohua Hu; Bo Chen; Ning Wang; Qiyuan He; Junze Chen; Jiaxu Yan; Wei Zhang; Tawfique Hasan; Shaozhou Li; Hai Li; Hua Zhang; Qiang Wang; Xiao Huang; Wei Huang
Journal: Nat Commun Date: 2018-09-06 Impact factor: 14.919

10. Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment.

Authors: Seo-Hyeon Jo; Hae Won Lee; Jaewoo Shim; Keun Heo; Minwoo Kim; Young Jae Song; Jin-Hong Park
Journal: Adv Sci (Weinh) Date: 2018-01-18 Impact factor: 16.806

High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma Treatment.

Review 1. Promises and prospects of two-dimensional transistors.

Review 2. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications.

Review 3. A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices.

4. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

Review 5. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

6. Realization of vertical metal semiconductor heterostructures via solution phase epitaxy.

7. Solution Processed Trilayer Structure for High-Performance Perovskite Photodetector.

8. Ultrasensitive MoS₂ photodetector by serial nano-bridge multi-heterojunction.

9. All-2D ReS₂ transistors with split gates for logic circuitry.

10. Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment.

High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma Treatment.

Review 1. Promises and prospects of two-dimensional transistors.

Review 2. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications.

Review 3. A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices.

4. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

Review 5. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

6. Realization of vertical metal semiconductor heterostructures via solution phase epitaxy.

7. Solution Processed Trilayer Structure for High-Performance Perovskite Photodetector.

8. Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction.

9. All-2D ReS2 transistors with split gates for logic circuitry.

10. Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment.

Review 3. A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices.

8. Ultrasensitive MoS₂ photodetector by serial nano-bridge multi-heterojunction.

9. All-2D ReS₂ transistors with split gates for logic circuitry.