| Literature DB >> 26708256 |
Jing Zhang1, Jinhuan Wang2, Peng Chen1, Yue Sun1, Shuang Wu1, Zhiyan Jia3, Xiaobo Lu1, Hua Yu1, Wei Chen1, Jianqi Zhu1, Guibai Xie4, Rong Yang1, Dongxia Shi1, Xiulai Xu1, Jianyong Xiang3, Kaihui Liu2,5, Guangyu Zhang1,5.
Abstract
Epitaxial growth of A-A and A-B stacking MoS2 on WS2 via a two-step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface and a strong interlayer coupling, as evidenced by systematic characterization. Low-frequency Raman breathing and shear modes are observed in commensurate stacking bilayers for the first time; these can serve as persuasive fingerprints for interfacial quality and stacking configurations.Keywords: MoS2/WS2; charge transfer; interlayer coupling; low-frequency Raman modes; photoluminescence spectra; van der Waals epitaxial heterostructures
Year: 2015 PMID: 26708256 DOI: 10.1002/adma.201504631
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849