Literature DB >> 26708002

Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires.

Yunyan Zhang1, Ana M Sanchez2, Yue Sun3, Jiang Wu1, Martin Aagesen4, Suguo Huo5, Dongyoung Kim1, Pamela Jurczak1, Xiulai Xu3, Huiyun Liu1.   

Abstract

The influences of droplet size on the growth of self-catalyzed ternary nanowires (NWs) were studied using GaAsP NWs. The size-induced Gibbs-Thomson (GT) effect makes the smaller catalytic droplets have lower effective supersaturations and hence slower nucleation rates than the larger ones. Large variation in droplet size thus led to the growth of NWs with low uniformity, while a good size uniformity of droplets resulted in the production of highly uniform NWs. Moreover, thinner NWs were observed to be richer in P, indicating that P is more resistant to the GT effect than As because of a higher chemical potential inside Ga droplets. These results provide useful information for understanding the mechanisms of self-catalyzed III-V NW nucleation and growth with the important ternary III-V material systems.

Keywords:  GaAsP; Gibbs−Thomson effect; Nanowire; chemical potential; droplet size; self−catalyzed; uniformity

Year:  2016        PMID: 26708002     DOI: 10.1021/acs.nanolett.5b04554

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  5 in total

1.  Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition.

Authors:  Xianghai Ji; Xiaoguang Yang; Tao Yang
Journal:  Nanoscale Res Lett       Date:  2017-06-26       Impact factor: 4.703

2.  Structural Investigation of Uniform Ensembles of Self-Catalyzed GaAs Nanowires Fabricated by a Lithography-Free Technique.

Authors:  Eero Koivusalo; Teemu Hakkarainen; Mircea Guina
Journal:  Nanoscale Res Lett       Date:  2017-03-16       Impact factor: 4.703

3.  Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement.

Authors:  Yunyan Zhang; George Davis; H Aruni Fonseka; Anton Velichko; Anders Gustafsson; Tillmann Godde; Dhruv Saxena; Martin Aagesen; Patrick W Parkinson; James A Gott; Suguo Huo; Ana M Sanchez; David J Mowbray; Huiyun Liu
Journal:  ACS Nano       Date:  2019-05-09       Impact factor: 15.881

4.  Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement.

Authors:  Yunyan Zhang; Anton V Velichko; H Aruni Fonseka; Patrick Parkinson; James A Gott; George Davis; Martin Aagesen; Ana M Sanchez; David Mowbray; Huiyun Liu
Journal:  Nano Lett       Date:  2021-06-28       Impact factor: 11.189

5.  Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO2 Layer.

Authors:  Fan Cui; Yunyan Zhang; H Aruni Fonseka; Premrudee Promdet; Ali Imran Channa; Mingqing Wang; Xueming Xia; Sanjayan Sathasivam; Hezhuang Liu; Ivan P Parkin; Hui Yang; Ting Li; Kwang-Leong Choy; Jiang Wu; Christopher Blackman; Ana M Sanchez; Huiyun Liu
Journal:  ACS Appl Mater Interfaces       Date:  2021-06-23       Impact factor: 9.229

  5 in total

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