Literature DB >> 26432242

Condensed-matter Physics: Flat transistor defies the limit.

Katsuhiro Tomioka1.   

Abstract

Year:  2015        PMID： 26432242     DOI： 10.1038/526051a

Source DB:  PubMed          Journal:  Nature        ISSN： 0028-0836            Impact factor:   49.962


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  6 in total

1.  Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors.

Authors:  Isabelle Ferain; Cynthia A Colinge; Jean-Pierre Colinge
Journal:  Nature       Date:  2011-11-16       Impact factor: 49.962

2.  Nanometre-scale electronics with III-V compound semiconductors.

Authors:  Jesús A del Alamo
Journal:  Nature       Date:  2011-11-16       Impact factor: 49.962

3.  Use of negative capacitance to provide voltage amplification for low power nanoscale devices.

Authors:  Sayeef Salahuddin; Supriyo Datta
Journal:  Nano Lett       Date:  2007-12-06       Impact factor: 11.189

4.  Single-layer MoS2 transistors.

Authors:  B Radisavljevic; A Radenovic; J Brivio; V Giacometti; A Kis
Journal:  Nat Nanotechnol       Date:  2011-01-30       Impact factor: 39.213

5.  A subthermionic tunnel field-effect transistor with an atomically thin channel.

Authors:  Deblina Sarkar; Xuejun Xie; Wei Liu; Wei Cao; Jiahao Kang; Yongji Gong; Stephan Kraemer; Pulickel M Ajayan; Kaustav Banerjee
Journal:  Nature       Date:  2015-10-01       Impact factor: 49.962

6.  Academic and industry research progress in germanium nanodevices.

Authors:  Ravi Pillarisetty
Journal:  Nature       Date:  2011-11-16       Impact factor: 49.962
  6 in total
  1 in total

1.  Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics.

Authors:  Qilin Hua; Guoyun Gao; Chunsheng Jiang; Jinran Yu; Junlu Sun; Taiping Zhang; Bin Gao; Weijun Cheng; Renrong Liang; He Qian; Weiguo Hu; Qijun Sun; Zhong Lin Wang; Huaqiang Wu
Journal:  Nat Commun       Date:  2020-12-04       Impact factor: 14.919
  1 in total

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