Literature DB >> 22094690

Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors.

Isabelle Ferain1, Cynthia A Colinge, Jean-Pierre Colinge.   

Abstract

For more than four decades, transistors have been shrinking exponentially in size, and therefore the number of transistors in a single microelectronic chip has been increasing exponentially. Such an increase in packing density was made possible by continually shrinking the metal-oxide-semiconductor field-effect transistor (MOSFET). In the current generation of transistors, the transistor dimensions have shrunk to such an extent that the electrical characteristics of the device can be markedly degraded, making it unlikely that the exponential decrease in transistor size can continue. Recently, however, a new generation of MOSFETs, called multigate transistors, has emerged, and this multigate geometry will allow the continuing enhancement of computer performance into the next decade.
© 2011 Macmillan Publishers Limited. All rights reserved

Entities:  

Year:  2011        PMID: 22094690     DOI: 10.1038/nature10676

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  2 in total

1.  Use of negative capacitance to provide voltage amplification for low power nanoscale devices.

Authors:  Sayeef Salahuddin; Supriyo Datta
Journal:  Nano Lett       Date:  2007-12-06       Impact factor: 11.189

2.  Nanowire transistors without junctions.

Authors:  Jean-Pierre Colinge; Chi-Woo Lee; Aryan Afzalian; Nima Dehdashti Akhavan; Ran Yan; Isabelle Ferain; Pedram Razavi; Brendan O'Neill; Alan Blake; Mary White; Anne-Marie Kelleher; Brendan McCarthy; Richard Murphy
Journal:  Nat Nanotechnol       Date:  2010-02-21       Impact factor: 39.213

  2 in total
  38 in total

1.  Nanometre-scale electronics with III-V compound semiconductors.

Authors:  Jesús A del Alamo
Journal:  Nature       Date:  2011-11-16       Impact factor: 49.962

2.  Condensed-matter Physics: Flat transistor defies the limit.

Authors:  Katsuhiro Tomioka
Journal:  Nature       Date:  2015-10-01       Impact factor: 49.962

Review 3.  Promises and prospects of two-dimensional transistors.

Authors:  Yuan Liu; Xidong Duan; Hyeon-Jin Shin; Seongjun Park; Yu Huang; Xiangfeng Duan
Journal:  Nature       Date:  2021-03-03       Impact factor: 49.962

4.  Moore's Law revisited through Intel chip density.

Authors:  David Burg; Jesse H Ausubel
Journal:  PLoS One       Date:  2021-08-18       Impact factor: 3.240

5.  Quasi-two-dimensional α-molybdenum oxide thin film prepared by magnetron sputtering for neuromorphic computing.

Authors:  Zhenfa Wu; Peng Shi; Ruofei Xing; Yuzhi Xing; Yufeng Ge; Lin Wei; Dong Wang; Le Zhao; Shishen Yan; Yanxue Chen
Journal:  RSC Adv       Date:  2022-06-15       Impact factor: 4.036

6.  A III-V nanowire channel on silicon for high-performance vertical transistors.

Authors:  Katsuhiro Tomioka; Masatoshi Yoshimura; Takashi Fukui
Journal:  Nature       Date:  2012-08-09       Impact factor: 49.962

7.  Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2.

Authors:  Amir Muhammad Afzal; Muhammad Zahir Iqbal; Ghulam Dastgeer; Aqrab Ul Ahmad; Byoungchoo Park
Journal:  Adv Sci (Weinh)       Date:  2021-03-16       Impact factor: 16.806

8.  Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

Authors:  Erfu Liu; Yajun Fu; Yaojia Wang; Yanqing Feng; Huimei Liu; Xiangang Wan; Wei Zhou; Baigeng Wang; Lubin Shao; Ching-Hwa Ho; Ying-Sheng Huang; Zhengyi Cao; Laiguo Wang; Aidong Li; Junwen Zeng; Fengqi Song; Xinran Wang; Yi Shi; Hongtao Yuan; Harold Y Hwang; Yi Cui; Feng Miao; Dingyu Xing
Journal:  Nat Commun       Date:  2015-05-07       Impact factor: 14.919

9.  Gap state analysis in electric-field-induced band gap for bilayer graphene.

Authors:  Kaoru Kanayama; Kosuke Nagashio
Journal:  Sci Rep       Date:  2015-10-29       Impact factor: 4.379

10.  Estimation and Analysis of Higher-Order Harmonics in Advanced Integrated Circuits to Implement Noise-Free Future-Generation Micro- and Nanoelectromechanical Systems.

Authors:  Muhammad Imran Khan; Ahmed S Alshammari; Badr M Alshammari; Ahmed A Alzamil
Journal:  Micromachines (Basel)       Date:  2021-05-10       Impact factor: 2.891

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.