Literature DB >> 22094692

Academic and industry research progress in germanium nanodevices.

Ravi Pillarisetty1.   

Abstract

Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
© 2011 Macmillan Publishers Limited. All rights reserved

Entities:  

Year:  2011        PMID: 22094692     DOI: 10.1038/nature10678

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  29 in total

1.  Condensed-matter Physics: Flat transistor defies the limit.

Authors:  Katsuhiro Tomioka
Journal:  Nature       Date:  2015-10-01       Impact factor: 49.962

2.  A four-qubit germanium quantum processor.

Authors:  Nico W Hendrickx; William I L Lawrie; Maximilian Russ; Floor van Riggelen; Sander L de Snoo; Raymond N Schouten; Amir Sammak; Giordano Scappucci; Menno Veldhorst
Journal:  Nature       Date:  2021-03-24       Impact factor: 69.504

3.  A remarkable mixture of germanium with phosphorus and arsenic atoms making stable pentagonal hetero-prisms [M@Ge5E5]+, E = P, As and M = Fe, Ru, Os.

Authors:  Hung Tan Pham; Cam-Tu Dang Phan; Minh Tho Nguyen; Nguyen Minh Tam
Journal:  RSC Adv       Date:  2020-05-27       Impact factor: 4.036

4.  Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature.

Authors:  Freddawati Rashiddy Wong; Amgad Ahmed Ali; Kanji Yasui; Abdul Manaf Hashim
Journal:  Nanoscale Res Lett       Date:  2015-05-27       Impact factor: 4.703

5.  RF-to-DC characteristics of direct irradiated on-chip gallium arsenide Schottky diode and antenna for application in proximity communication system.

Authors:  Farahiyah Mustafa; Abdul Manaf Hashim
Journal:  Sensors (Basel)       Date:  2014-02-20       Impact factor: 3.576

6.  Next generation device grade silicon-germanium on insulator.

Authors:  Callum G Littlejohns; Milos Nedeljkovic; Christopher F Mallinson; John F Watts; Goran Z Mashanovich; Graham T Reed; Frederic Y Gardes
Journal:  Sci Rep       Date:  2015-02-06       Impact factor: 4.379

7.  Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations.

Authors:  Yuanyuan Jin; Shengjie Lu; Andreas Hermann; Xiaoyu Kuang; Chuanzhao Zhang; Cheng Lu; Hongguang Xu; Weijun Zheng
Journal:  Sci Rep       Date:  2016-07-21       Impact factor: 4.379

8.  Bottom-up assembly of metallic germanium.

Authors:  Giordano Scappucci; Wolfgang M Klesse; LaReine A Yeoh; Damien J Carter; Oliver Warschkow; Nigel A Marks; David L Jaeger; Giovanni Capellini; Michelle Y Simmons; Alexander R Hamilton
Journal:  Sci Rep       Date:  2015-08-10       Impact factor: 4.379

9.  A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects.

Authors:  Chih-Kuo Tseng; Wei-Ting Chen; Ku-Hung Chen; Han-Din Liu; Yimin Kang; Neil Na; Ming-Chang M Lee
Journal:  Sci Rep       Date:  2013-11-15       Impact factor: 4.379

10.  Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric.

Authors:  Sung Kyu Jang; Jiyoun Youn; Young Jae Song; Sungjoo Lee
Journal:  Sci Rep       Date:  2016-07-26       Impact factor: 4.379

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