| Literature DB >> 26337754 |
A E Gleason1,2, C A Bolme1, H J Lee3, B Nagler3, E Galtier3, D Milathianaki3, J Hawreliak4, R G Kraus5, J H Eggert5, D E Fratanduono5, G W Collins5, R Sandberg6, W Yang7,8, W L Mao2,9.
Abstract
Pressure- and temperature-induced phase transitions have been studied for more than a century but very little is known about the non-equilibrium processes by which the atoms rearrange. Shock compression generates a nearly instantaneous propagating high-pressure/temperature condition while in situ X-ray diffraction (XRD) probes the time-dependent atomic arrangement. Here we present in situ pump-probe XRD measurements on shock-compressed fused silica, revealing an amorphous to crystalline high-pressure stishovite phase transition. Using the size broadening of the diffraction peaks, the growth of nanocrystalline stishovite grains is resolved on the nanosecond timescale just after shock compression. At applied pressures above 18 GPa the nuclueation of stishovite appears to be kinetically limited to 1.4±0.4 ns. The functional form of this grain growth suggests homogeneous nucleation and attachment as the growth mechanism. These are the first observations of crystalline grain growth in the shock front between low- and high-pressure states via XRD.Entities:
Year: 2015 PMID: 26337754 PMCID: PMC4569796 DOI: 10.1038/ncomms9191
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Figure 1Experimental configuration of the XFEL probe and optical laser.
The lattice response of the sample was captured in a Debye–Scherrer geometry. Inset: example of XRD resulting from azimuthal integration of CSPAD data for a suite of time delays under shock compression. A schematic of the target is shown on the right side for each time delay (white: plastic; grey: fused silica). A dashed line indicates the approximate location of the shock front; arrow is the shock propagation direction.
Figure 2Multiplot of XRD data.
Stishovite peaks are labelled at the top; ambient condition positions (grey dashed lines). Traces are clustered according to applied pressure where each colour indicates a different delay time (grey is X-ray only). Offset along the y axis is arbitrary for viewing clarity. Discontinuities in the traces are seen at 32.5°, 46.0° and 58.0° 2θ due to spacing between the application-specific integrated circuits of the CSPADs.
Figure 3Analysis of peak widths versus lattice plane position at four applied pressures.
Q is related to the 2θ peak position by: ; X-ray wavelength λ=1.5498 Å. Dots are the measured points and the lines are the weighted linear fits. Colour code is the same as in Fig. 2. The lack of more than one Bragg peak at a given time delay for the 4.7 and 7.6 GPa data limits our ability to directly measure the slope. Therefore, the A parameter determined from the 7.6-GPa, 9.7-ns shot (yielding a r.m.s. strain of 10−3) is used for all other 4.7- and 7.6-GPa traces, providing an upper bound on the grain size. For the 18.9- and 33.6-GPa shots ɛ decreases with increasing delay time from 10−3 to 10−4.
Figure 4Experimentally determined average grain sizes as a function of delay time.
Different colours/symbols are for SiO2 at different applied pressures. Fits are from a simple growth model. Cartoon on the right (for 33.6 GPa at 10-ns delay, grey box) illustrates our interpretation of grain growth behind the shock front (black dashed line, propagation direction is grey arrow) showing a distribution of grain size increasing with distance from the shock front. A qualitative trend for probable grain density23 as function of time (or distance) is also shown.