| Literature DB >> 26255894 |
Yang Cui1, Run Xin1, Zhihao Yu1, Yiming Pan2, Zhun-Yong Ong3, Xiaoxu Wei1, Junzhuan Wang1, Haiyan Nan4, Zhenhua Ni4, Yun Wu5, Tangsheng Chen5, Yi Shi1, Baigeng Wang2, Gang Zhang3, Yong-Wei Zhang3, Xinran Wang1.
Abstract
The combination of high-quality Al2 O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm(2) V(-1) s(-1) (337 cm(2) V(-1) s(-1) ) is reached at room temperature (low temperature) for monolayer WS2 . A theoretical model for electron transport is also developed.Entities:
Keywords: interfaces; mobility; transition metal dichalcogenides; tungsten disulfide (WS2)
Year: 2015 PMID： 26255894 DOI： 10.1002/adma.201502222
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849