| Literature DB >> 25977665 |
Weiling Li1, Jing Zhang1, Yanqiong Zheng2, Guo Chen2, Miao Cai3, Bin Wei2.
Abstract
Though optically pumped lasing has been realized for years, electrically pumped lasing has not yet been achieved in organic semiconductor devices. In order to make a better understanding of the laser mechanisms of the organic materials, we prepared organic thin films consisting of three efficient laser dyes of a blue emitter, 4″,4″'-N,N-diphenylamine-4,4'-diphenyl-1,1'-binaphthyl (BN), a green emitter, 1,4-bis[2-[4-[N,N-di(p-tolyl)amino] phenyl]vinyl]benzene (DSB), and a red emitter, 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidy-l-9-enyl)-4H-pyran (DCJTB) with different doping concentrations for the first time to investigate the cascade energy transfer process. The energy transfer schemes in the co-doped thin films in photoluminescence and electroluminescence have been investigated. The results indicated that the DSB molecules acted as a bridge to deliver energy more effectively from the host (BN) to the guest (DCJTB). Meanwhile, the maximum current efficiency (C E) and power efficiency (P E) of the organic light-emitting devices (OLEDs) with the emitting layer of lower doping concentration were 13.5 cd/A and 14.1 lm/W, respectively.Entities:
Keywords: Cascade energy transfer; Hybrid thin films; Laser dyes; OLEDs
Year: 2015 PMID: 25977665 PMCID: PMC4414860 DOI: 10.1186/s11671-015-0899-y
Source DB: PubMed Journal: Nanoscale Res Lett ISSN: 1556-276X Impact factor: 4.703
Figure 1Absorbance (dotted line) and PL (solid line) spectra of the neat BN (blue), DSB (green), and DCJTB (red) films.
Figure 2PL spectra of the DCJTB-doped BN thin films with different concentrations.
Figure 3PL spectra of the DSB- and DCJTB-doped BN thin films with a concentration of 100:5:5; the insets are the description for the two schemes of energy transfer system.
Figure 4Device architecture and energy level diagram. (a) Architecture of the OLEDs is ITO/2T-NATA (20 nm)/NPB (30 nm)/emitting layer (20 nm)/TPBi (30 nm)/LiF (0.3 nm)/Al (150 nm), and the doping concentrations of the emitting layer (EML) of BN:DSB:DCJTB are 100:3:0.21 for device A and 100:20:4 for device B. (b) Device energy level diagram.
Figure 5Electroluminescence spectra of devices A and B under the same voltage.
Figure 6The J-V-L curves of devices A (red line) and B (blue line).
Figure 7The C E-L-P E curves of devices A (red line) and B (blue line).