| Literature DB >> 25586919 |
Xuefei Li1, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, Peide Ye, Yanqing Wu.
Abstract
High-performance MoS2 transistors scaled down to 100 nm are studied at various temperatures down to 20 K, where a highest drive current of 800 μA μm(-1) can be achieved. Extremely low electrical noise of 2.8 × 10(-10) μm(2) Hz(-1) at 10 Hz is also achieved at room temperature. Furthermore, a negative differential resistance behavior is experimentally observed and its origin of self-heating is identified using pulsed-current-voltage measurements.Entities:
Keywords: MoS2; low frequency noise; negative differential resistance; pulsed IV; transistor
Year: 2015 PMID: 25586919 DOI: 10.1002/adma.201405068
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849