Literature DB >> 25008527

An optoelectronic framework enabled by low-dimensional phase-change films.

Peiman Hosseini1, C David Wright2, Harish Bhaskaran1.   

Abstract

The development of materials whose refractive index can be optically transformed as desired, such as chalcogenide-based phase-change materials, has revolutionized the media and data storage industries by providing inexpensive, high-speed, portable and reliable platforms able to store vast quantities of data. Phase-change materials switch between two solid states--amorphous and crystalline--in response to a stimulus, such as heat, with an associated change in the physical properties of the material, including optical absorption, electrical conductance and Young's modulus. The initial applications of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited the reversible change in their optical properties in rewritable optical data storage technologies. More recently, the change in their electrical conductivity has also been extensively studied in the development of non-volatile phase-change memories. Here we show that by combining the optical and electronic property modulation of such materials, display and data visualization applications that go beyond data storage can be created. Using extremely thin phase-change materials and transparent conductors, we demonstrate electrically induced stable colour changes in both reflective and semi-transparent modes. Further, we show how a pixelated approach can be used in displays on both rigid and flexible films. This optoelectronic framework using low-dimensional phase-change materials has many likely applications, such as ultrafast, entirely solid-state displays with nanometre-scale pixels, semi-transparent 'smart' glasses, 'smart' contact lenses and artificial retina devices.

Entities:  

Year:  2014        PMID: 25008527     DOI: 10.1038/nature13487

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  14 in total

1.  Electrical wind force-driven and dislocation-templated amorphization in phase-change nanowires.

Authors:  Sung-Wook Nam; Hee-Suk Chung; Yu Chieh Lo; Liang Qi; Ju Li; Ye Lu; A T Charlie Johnson; Yeonwoong Jung; Pavan Nukala; Ritesh Agarwal
Journal:  Science       Date:  2012-06-22       Impact factor: 47.728

2.  Nanoscale phase change memory materials.

Authors:  Marissa A Caldwell; Rakesh Gnana David Jeyasingh; H-S Philip Wong; Delia J Milliron
Journal:  Nanoscale       Date:  2012-06-27       Impact factor: 7.790

3.  Accounting for interference, scattering, and electrode absorption to make accurate internal quantum efficiency measurements in organic and other thin solar cells.

Authors:  George F Burkhard; Eric T Hoke; Michael D McGehee
Journal:  Adv Mater       Date:  2010-08-10       Impact factor: 30.849

4.  Phase-change materials: towards a universal memory?

Authors:  Matthias Wuttig
Journal:  Nat Mater       Date:  2005-04       Impact factor: 43.841

5.  Ultra-high-density phase-change storage and memory.

Authors:  Hendrik F Hamann; Martin O'Boyle; Yves C Martin; Michael Rooks; H Kumar Wickramasinghe
Journal:  Nat Mater       Date:  2006-04-09       Impact factor: 43.841

6.  Phase-change materials for rewriteable data storage.

Authors:  Matthias Wuttig; Noboru Yamada
Journal:  Nat Mater       Date:  2007-11       Impact factor: 43.841

7.  Highly scalable non-volatile and ultra-low-power phase-change nanowire memory.

Authors:  Se-Ho Lee; Yeonwoong Jung; Ritesh Agarwal
Journal:  Nat Nanotechnol       Date:  2007-09-16       Impact factor: 39.213

8.  Nanoscale phase transformation in Ge2Sb2Te5 using encapsulated scanning probes and retraction force microscopy.

Authors:  Harish Bhaskaran; Abu Sebastian; Andrew Pauza; Haralampos Pozidis; Michel Despont
Journal:  Rev Sci Instrum       Date:  2009-08       Impact factor: 1.523

9.  Low-power switching of phase-change materials with carbon nanotube electrodes.

Authors:  Feng Xiong; Albert D Liao; David Estrada; Eric Pop
Journal:  Science       Date:  2011-03-10       Impact factor: 47.728

10.  Low-cost and nanoscale non-volatile memory concept for future silicon chips.

Authors:  Martijn H R Lankhorst; Bas W S M M Ketelaars; R A M Wolters
Journal:  Nat Mater       Date:  2005-04       Impact factor: 43.841

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  58 in total

1.  Time-domain separation of optical properties from structural transitions in resonantly bonded materials.

Authors:  Lutz Waldecker; Timothy A Miller; Miquel Rudé; Roman Bertoni; Johann Osmond; Valerio Pruneri; Robert E Simpson; Ralph Ernstorfer; Simon Wall
Journal:  Nat Mater       Date:  2015-07-27       Impact factor: 43.841

2.  Applied physics: A new view on displays.

Authors:  Dirk J Broer
Journal:  Nature       Date:  2014-07-10       Impact factor: 49.962

Review 3.  A review of tunable photonics: Optically active materials and applications from visible to terahertz.

Authors:  Joo Hwan Ko; Young Jin Yoo; Yubin Lee; Hyeon-Ho Jeong; Young Min Song
Journal:  iScience       Date:  2022-07-05

4.  Tunable Color-Variable Solar Absorber Based on Phase Change Material Sb2Se3.

Authors:  Xin Li; Mingyu Luo; Xinpeng Jiang; Shishang Luo; Junbo Yang
Journal:  Nanomaterials (Basel)       Date:  2022-06-02       Impact factor: 5.719

5.  Phase-change devices for simultaneous optical-electrical applications.

Authors:  Yat-Yin Au; Harish Bhaskaran; C David Wright
Journal:  Sci Rep       Date:  2017-08-29       Impact factor: 4.379

6.  Reconfigurable Continuous Meta-Grating for Broadband Polarization Conversion and Perfect Absorption.

Authors:  Yijia Huang; Tianxiao Xiao; Zhengwei Xie; Jie Zheng; Yarong Su; Weidong Chen; Ke Liu; Mingjun Tang; Ling Li
Journal:  Materials (Basel)       Date:  2021-04-26       Impact factor: 3.623

7.  Polarized Laser Switching with Giant Contrast in MOF-Based Mixed-Matrix Membrane.

Authors:  Hongjun Li; Lin Zhang; Yu Yang; Enlai Hu; Bin Li; Yuanjing Cui; Deren Yang; Guodong Qian
Journal:  Adv Sci (Weinh)       Date:  2022-04-11       Impact factor: 17.521

8.  Influence of the local structure in phase-change materials on their dielectric permittivity.

Authors:  Kostiantyn V Shportko; Eugen F Venger
Journal:  Nanoscale Res Lett       Date:  2015-02-05       Impact factor: 4.703

9.  Thermal crosstalk in 3-dimensional RRAM crossbar array.

Authors:  Pengxiao Sun; Nianduan Lu; Ling Li; Yingtao Li; Hong Wang; Hangbing Lv; Qi Liu; Shibing Long; Su Liu; Ming Liu
Journal:  Sci Rep       Date:  2015-08-27       Impact factor: 4.379

10.  Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe.

Authors:  Bin Zhang; Xue-Peng Wang; Zhen-Ju Shen; Xian-Bin Li; Chuan-Shou Wang; Yong-Jin Chen; Ji-Xue Li; Jin-Xing Zhang; Ze Zhang; Sheng-Bai Zhang; Xiao-Dong Han
Journal:  Sci Rep       Date:  2016-05-03       Impact factor: 4.379

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