Literature DB >> 22740071

Nanoscale phase change memory materials.

Marissa A Caldwell1, Rakesh Gnana David Jeyasingh, H-S Philip Wong, Delia J Milliron.   

Abstract

Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

Entities:  

Year:  2012        PMID: 22740071     DOI: 10.1039/c2nr30541k

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  7 in total

1.  Size-dependent chemical transformation, structural phase-change, and optical properties of nanowires.

Authors:  Brian Piccione; Rahul Agarwal; Yeonwoong Jung; Ritesh Agarwal
Journal:  Philos Mag (Abingdon)       Date:  2013       Impact factor: 1.864

2.  An optoelectronic framework enabled by low-dimensional phase-change films.

Authors:  Peiman Hosseini; C David Wright; Harish Bhaskaran
Journal:  Nature       Date:  2014-07-10       Impact factor: 49.962

3.  Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices.

Authors:  Barbara Casarin; Antonio Caretta; Jamo Momand; Bart J Kooi; Marcel A Verheijen; Valeria Bragaglia; Raffaella Calarco; Marina Chukalina; Xiaoming Yu; John Robertson; Felix R L Lange; Matthias Wuttig; Andrea Redaelli; Enrico Varesi; Fulvio Parmigiani; Marco Malvestuto
Journal:  Sci Rep       Date:  2016-03-01       Impact factor: 4.379

4.  Size-dependent and tunable crystallization of GeSbTe phase-change nanoparticles.

Authors:  Bin Chen; Gert H Ten Brink; George Palasantzas; Bart J Kooi
Journal:  Sci Rep       Date:  2016-12-20       Impact factor: 4.379

Review 5.  Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices.

Authors:  Niloufar Raeis-Hosseini; Junsuk Rho
Journal:  Materials (Basel)       Date:  2017-09-06       Impact factor: 3.623

Review 6.  Phase change thin films for non-volatile memory applications.

Authors:  A Lotnyk; M Behrens; B Rauschenbach
Journal:  Nanoscale Adv       Date:  2019-09-18

7.  Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3.

Authors:  Xue-Peng Wang; Xian-Bin Li; Nian-Ke Chen; Bin Chen; Feng Rao; Shengbai Zhang
Journal:  Adv Sci (Weinh)       Date:  2021-05-14       Impact factor: 16.806

  7 in total

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