Literature DB >> 16604077

Ultra-high-density phase-change storage and memory.

Hendrik F Hamann1, Martin O'Boyle, Yves C Martin, Michael Rooks, H Kumar Wickramasinghe.   

Abstract

Phase-change storage is widely used in optical information technologies (DVD, CD-ROM and so on), and recently it has also been considered for non-volatile memory applications. This work reports advances in thermal data recording of phase-change materials. Specifically, we show erasable thermal phase-change recording at a storage density of 3.3 Tb inch(-2), which is three orders of magnitude denser than that currently achievable with commercial optical storage technologies. We demonstrate the concept of a thin-film nanoheater to realize ultra-small heat spots with dimensions of less than 50 nm. Finally, we show in a proof-of-concept demonstration that an individual thin-film heater can write, erase and read the phase of these storage materials at competitive speeds. This work provides important stepping stones for a very-high-density storage or memory technology based on phase-change materials.

Year:  2006        PMID: 16604077     DOI: 10.1038/nmat1627

Source DB:  PubMed          Journal:  Nat Mater        ISSN: 1476-1122            Impact factor:   43.841


  22 in total

1.  4D visualization of embryonic, structural crystallization by single-pulse microscopy.

Authors:  Oh-Hoon Kwon; Brett Barwick; Hyun Soon Park; J Spencer Baskin; Ahmed H Zewail
Journal:  Proc Natl Acad Sci U S A       Date:  2008-06-18       Impact factor: 11.205

2.  Dynamic superlubricity and the elimination of wear on the nanoscale.

Authors:  Mark A Lantz; Dorothea Wiesmann; Bernd Gotsmann
Journal:  Nat Nanotechnol       Date:  2009-08-02       Impact factor: 39.213

3.  Ultrahigh-density phase-change data storage without the use of heating.

Authors:  Ara Jo; Wonchul Joo; Won-Hyeog Jin; Hyojin Nam; Jin Kon Kim
Journal:  Nat Nanotechnol       Date:  2009-09-13       Impact factor: 39.213

4.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

Authors:  Myoung-Jae Lee; Chang Bum Lee; Dongsoo Lee; Seung Ryul Lee; Man Chang; Ji Hyun Hur; Young-Bae Kim; Chang-Jung Kim; David H Seo; Sunae Seo; U-In Chung; In-Kyeong Yoo; Kinam Kim
Journal:  Nat Mater       Date:  2011-07-10       Impact factor: 43.841

5.  Highly thermosensitive Ca dynamics in a HeLa cell through IP(3) receptors.

Authors:  Vadim Tseeb; Madoka Suzuki; Kotaro Oyama; Kaoru Iwai; Shin'ichi Ishiwata
Journal:  HFSP J       Date:  2009-03-04

6.  An optoelectronic framework enabled by low-dimensional phase-change films.

Authors:  Peiman Hosseini; C David Wright; Harish Bhaskaran
Journal:  Nature       Date:  2014-07-10       Impact factor: 49.962

7.  Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer.

Authors:  Jaemin Park; Daihong Huh; Soomin Son; Wonjoong Kim; Sucheol Ju; Heon Lee
Journal:  Glob Chall       Date:  2022-05-18

8.  Application of nanomaterials in two-terminal resistive-switching memory devices.

Authors:  Jianyong Ouyang
Journal:  Nano Rev       Date:  2010-05-26

9.  Charge-order domain walls with enhanced conductivity in a layered manganite.

Authors:  Eric Yue Ma; Benjamin Bryant; Yusuke Tokunaga; Gabriel Aeppli; Yoshinori Tokura; Zhi-Xun Shen
Journal:  Nat Commun       Date:  2015-07-03       Impact factor: 14.919

10.  All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics.

Authors:  Yoon Cheol Bae; Ah Rahm Lee; Gwang Ho Baek; Je Bock Chung; Tae Yoon Kim; Jea Gun Park; Jin Pyo Hong
Journal:  Sci Rep       Date:  2015-08-20       Impact factor: 4.379

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.