Literature DB >> 24972221

Single-shot readout and relaxation of singlet and triplet states in exchange-coupled 31P electron spins in silicon.

Juan P Dehollain1, Juha T Muhonen1, Kuan Y Tan1, Andre Saraiva2, David N Jamieson3, Andrew S Dzurak1, Andrea Morello1.   

Abstract

We present the experimental observation of a large exchange coupling J ≈ 300 μeV between two (31)P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a single-electron transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time T(1) ≈ 4 ms at zero magnetic field agrees with the theoretical prediction for J-coupled 31P dimers in silicon. The time evolution of the two-electron state populations gives further insight into the valley-orbit eigenstates of the donor dimer, valley selection rules and relaxation rates, and the role of hyperfine interactions. These results pave the way to the realization of two-qubit quantum logic gates with spins in silicon and highlight the necessity to adopt gating schemes compatible with weak J-coupling strengths.

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Year:  2014        PMID: 24972221     DOI: 10.1103/PhysRevLett.112.236801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  7 in total

1.  Electrical current through individual pairs of phosphorus donor atoms and silicon dangling bonds.

Authors:  K Ambal; P Rahe; A Payne; J Slinkman; C C Williams; C Boehme
Journal:  Sci Rep       Date:  2016-01-13       Impact factor: 4.379

2.  Coherent coupling between a quantum dot and a donor in silicon.

Authors:  Patrick Harvey-Collard; N Tobias Jacobson; Martin Rudolph; Jason Dominguez; Gregory A Ten Eyck; Joel R Wendt; Tammy Pluym; John King Gamble; Michael P Lilly; Michel Pioro-Ladrière; Malcolm S Carroll
Journal:  Nat Commun       Date:  2017-10-18       Impact factor: 14.919

3.  Silicon quantum processor with robust long-distance qubit couplings.

Authors:  Guilherme Tosi; Fahd A Mohiyaddin; Vivien Schmitt; Stefanie Tenberg; Rajib Rahman; Gerhard Klimeck; Andrea Morello
Journal:  Nat Commun       Date:  2017-09-06       Impact factor: 14.919

4.  The multi-photon induced Fano effect.

Authors:  K L Litvinenko; Nguyen H Le; B Redlich; C R Pidgeon; N V Abrosimov; Y Andreev; Zhiming Huang; B N Murdin
Journal:  Nat Commun       Date:  2021-01-19       Impact factor: 14.919

5.  Valley interference and spin exchange at the atomic scale in silicon.

Authors:  B Voisin; J Bocquel; A Tankasala; M Usman; J Salfi; R Rahman; M Y Simmons; L C L Hollenberg; S Rogge
Journal:  Nat Commun       Date:  2020-11-30       Impact factor: 14.919

6.  Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device.

Authors:  Mateusz T Ma Dzik; Arne Laucht; Fay E Hudson; Alexander M Jakob; Brett C Johnson; David N Jamieson; Kohei M Itoh; Andrew S Dzurak; Andrea Morello
Journal:  Nat Commun       Date:  2021-01-08       Impact factor: 14.919

7.  Observation of current-induced, long-lived persistent spin polarization in a topological insulator: A rechargeable spin battery.

Authors:  Jifa Tian; Seokmin Hong; Ireneusz Miotkowski; Supriyo Datta; Yong P Chen
Journal:  Sci Adv       Date:  2017-04-14       Impact factor: 14.136

  7 in total

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