Literature DB >> 33469024

The multi-photon induced Fano effect.

K L Litvinenko1, Nguyen H Le2, B Redlich3, C R Pidgeon4, N V Abrosimov5, Y Andreev6,7, Zhiming Huang8, B N Murdin2.   

Abstract

The ordinary Fano effect occurs in many-electron atoms and requires an autoionizing state. With such a state, photo-ionization may proceed via pathways that interfere, and the characteristic asymmetric resonance structures appear in the continuum. Here we demonstrate that Fano structure may also be induced without need of auto-ionization, by dressing the continuum with an ordinary bound state in any atom by a coupling laser. Using multi-photon processes gives complete, ultra-fast control over the interference. We show that a line-shape index q near unity (maximum asymmetry) may be produced in hydrogenic silicon donors with a relatively weak beam. Since the Fano lineshape has both constructive and destructive interference, the laser control opens the possibility of state-selective detection with enhancement on one side of resonance and invisibility on the other. We discuss a variety of atomic and molecular spectroscopies, and in the case of silicon donors we provide a calculation for a qubit readout application.

Entities:  

Year:  2021        PMID: 33469024      PMCID: PMC7815926          DOI: 10.1038/s41467-020-20534-0

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  25 in total

1.  Tuning of the Fano effect through a quantum dot in an Aharonov-Bohm interferometer.

Authors:  Kensuke Kobayashi; Hisashi Aikawa; Shingo Katsumoto; Yasuhiro Iye
Journal:  Phys Rev Lett       Date:  2002-06-10       Impact factor: 9.161

2.  Ultrafast all optical switching via tunable Fano interference.

Authors:  Jin-Hui Wu; Jin-Yue Gao; Ji-Hua Xu; L Silvestri; M Artoni; G C La Rocca; F Bassani
Journal:  Phys Rev Lett       Date:  2005-07-25       Impact factor: 9.161

3.  Fano resonances in chalcogen-doped silicon.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1985-06-15

4.  High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon.

Authors:  M A Broome; T F Watson; D Keith; S K Gorman; M G House; J G Keizer; S J Hile; W Baker; M Y Simmons
Journal:  Phys Rev Lett       Date:  2017-07-25       Impact factor: 9.161

5.  Bismuth qubits in silicon: the role of EPR cancellation resonances.

Authors:  M H Mohammady; G W Morley; T S Monteiro
Journal:  Phys Rev Lett       Date:  2010-08-06       Impact factor: 9.161

6.  Quantum control of hybrid nuclear-electronic qubits.

Authors:  Gavin W Morley; Petra Lueders; M Hamed Mohammady; Setrak J Balian; Gabriel Aeppli; Christopher W M Kay; Wayne M Witzel; Gunnar Jeschke; Tania S Monteiro
Journal:  Nat Mater       Date:  2012-12-02       Impact factor: 43.841

7.  Si:P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars.

Authors:  B N Murdin; Juerong Li; M L Y Pang; E T Bowyer; K L Litvinenko; S K Clowes; H Engelkamp; C R Pidgeon; I Galbraith; N V Abrosimov; H Riemann; S G Pavlov; H-W Hübers; P G Murdin
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

8.  Temperature-tunable Fano resonance induced by strong coupling between Weyl fermions and phonons in TaAs.

Authors:  B Xu; Y M Dai; L X Zhao; K Wang; R Yang; W Zhang; J Y Liu; H Xiao; G F Chen; S A Trugman; J-X Zhu; A J Taylor; D A Yarotski; R P Prasankumar; X G Qiu
Journal:  Nat Commun       Date:  2017-03-30       Impact factor: 14.919

9.  Giant non-linear susceptibility of hydrogenic donors in silicon and germanium.

Authors:  Nguyen H Le; Grigory V Lanskii; Gabriel Aeppli; Benedict N Murdin
Journal:  Light Sci Appl       Date:  2019-07-10       Impact factor: 17.782

10.  Reconfigurable MEMS Fano metasurfaces with multiple-input-output states for logic operations at terahertz frequencies.

Authors:  Manukumara Manjappa; Prakash Pitchappa; Navab Singh; Nan Wang; Nikolay I Zheludev; Chengkuo Lee; Ranjan Singh
Journal:  Nat Commun       Date:  2018-10-03       Impact factor: 14.919

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.