| Literature DB >> 24677118 |
Gi-Hwan Kim1, Bright Walker, Hak-Beom Kim, Jin Young Kim, Edward H Sargent, Jongnam Park, Jin Young Kim.
Abstract
An inverted architecture of quantum dot solar cells is demonstrated by introducing a novel ZnO method on top of the PbS CQD film. Improvements in device characteristics stem from constructive optical interference from the ZnO layer that enhances absorption in the PbS CQD layer. Outstanding diode characteristics arising from a superior PbS/ZnO junction provide a further electronic advantage.Entities:
Keywords: depleted heterojunction; lead sulfide; nanoparticles; quantum dot solar cells; zinc oxide
Year: 2014 PMID: 24677118 DOI: 10.1002/adma.201305583
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849