| Literature DB >> 24042150 |
Jihwan An1, Joong Sun Park, Ai Leen Koh, Hark B Lee, Hee Joon Jung, Joop Schoonman, Robert Sinclair, Turgut M Gür, Fritz B Prinz.
Abstract
This study presents atomic scale characterization of grain boundary defect structure in a functional oxide with implications for a wide range of electrochemical and electronic behavior. Indeed, grain boundary engineering can alter transport and kinetic properties by several orders of magnitude. Here we report experimental observation and determination of oxide-ion vacancy concentration near the Σ13 (510)/[001] symmetric tilt grain-boundary of YSZ bicrystal using aberration-corrected TEM operated under negative spherical aberration coefficient imaging condition. We show significant oxygen deficiency due to segregation of oxide-ion vacancies near the grain-boundary core with half-width < 0.6 nm. Electron energy loss spectroscopy measurements with scanning TEM indicated increased oxide-ion vacancy concentration at the grain boundary core. Oxide-ion density distribution near a grain boundary simulated by molecular dynamics corroborated well with experimental results. Such column-by-column quantification of defect concentration in functional materials can provide new insights that may lead to engineered grain boundaries designed for specific functionalities.Entities:
Year: 2013 PMID: 24042150 PMCID: PMC3775093 DOI: 10.1038/srep02680
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Bright-field TEM images of near-GB area investigated in this study within the range of (a) ~ 6 μm and (b) ~ 300 nm of GB.
GBs are marked with red arrows on both sides. (c) Aberration-corrected TEM image taken at negative-Cs condition near Σ13(510)/[001] GB (white-dotted line) of bicrystal YSZ showing perfect registry with the simulated image in yellow inset. (d) The same aberration-corrected TEM image with oxygen columns in color code corresponding to their normalized image intensity (normalized by maximum oxygen column intensity). (e) Intensities of individual atomic columns. (f) Column intensity ratio (O/Zr) as a function of distance away from the center of the GB core (x = 0). 6 columns were counted for each data point. The error bar size is 1-standard deviation.
Figure 2(a) STEM image near the GB of the bicrystal YSZ. The yellow-dotted line represents the profiling line of the STEM probe for EELS measurements. The GB is marked with red arrows on both sides. (b) Variation of compositional ratio (O/(Zr + Y)) away from the center of the GB core determined by STEM-EELS with a probe size of 0.5 nm. The compositional ratio in the bulk (1.93 in 8 mol% doped YSZ) is shown by the green-dotted line. 10 measurements were conducted for each data point. The error bar size is 1-standard deviation.
Figure 3Hybrid MC-MD simulation results for, (a) a simulation cell with two Σ13(510)/[001] GBs, (b) 2-D distribution of cations, and (c) 2-D distribution of oxide-ions.
Figure 4(a) Normalized intensity (experimental) and normalized peak ion density (simulated) of cation columns (both normalized by average cation column ion density of 225). (b) Normalized intensity and normalized peak ion density of anion columns (both normalized by average anion column ion density of 175). (c) O/Zr intensity ratio plot and O/Zr ion density ratio plot. 6 columns were counted for each data point. The error bar size is 1-standard deviation.