| Literature DB >> 23941328 |
M Hjort1, S Lehmann, J Knutsson, R Timm, D Jacobsson, E Lundgren, K A Dick, A Mikkelsen.
Abstract
Using scanning tunneling microscopy and spectroscopy we study the atomic scale geometry and electronic structure of GaAs nanowires exhibiting controlled axial stacking of wurtzite (Wz) and zinc blende (Zb) crystal segments. We find that the nonpolar low-index surfaces {110}, {101[overline]0}, and {112[overline]0} are unreconstructed, unpinned, and without states in the band gap region. Direct comparison between Wz and Zb GaAs reveal a type-II band alignment and a Wz GaAs band gap of 1.52 eV.Entities:
Year: 2013 PMID: 23941328 DOI: 10.1021/nl402424x
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189