| Literature DB >> 23103933 |
Hongsik Park1, Ali Afzali, Shu-Jen Han, George S Tulevski, Aaron D Franklin, Jerry Tersoff, James B Hannon, Wilfried Haensch.
Abstract
Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon nanotubes with a density as high as 1 × 10(9) cm(-2)-two orders of magnitude higher than previous reports. With this approach, we assembled a high density of carbon-nanotube transistors in a conventional semiconductor fabrication line and then electrically tested more than 10,000 devices in a single chip. The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity.Entities:
Year: 2012 PMID: 23103933 DOI: 10.1038/nnano.2012.189
Source DB: PubMed Journal: Nat Nanotechnol ISSN: 1748-3387 Impact factor: 39.213