Literature DB >> 22614504

Two centuries of memristors.

Themistoklis Prodromakis1, Christofer Toumazou, Leon Chua.   

Abstract

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Year:  2012        PMID： 22614504     DOI： 10.1038/nmat3338

Source DB:  PubMed          Journal:  Nat Mater        ISSN： 1476-1122            Impact factor:   43.841


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  10 in total

1.  Observation of conducting filament growth in nanoscale resistive memories.

Authors:  Yuchao Yang; Peng Gao; Siddharth Gaba; Ting Chang; Xiaoqing Pan; Wei Lu
Journal:  Nat Commun       Date:  2012-03-13       Impact factor: 14.919

2.  Phase-change materials for rewriteable data storage.

Authors:  Matthias Wuttig; Noboru Yamada
Journal:  Nat Mater       Date:  2007-11       Impact factor: 43.841

3.  Hysteresis in the voltage dependence of HCN channels: conversion between two modes affects pacemaker properties.

Authors:  Roope Männikkö; Shilpi Pandey; H Peter Larsson; Fredrik Elinder
Journal:  J Gen Physiol       Date:  2005-02-14       Impact factor: 4.086

4.  The missing memristor found.

Authors:  Dmitri B Strukov; Gregory S Snider; Duncan R Stewart; R Stanley Williams
Journal:  Nature       Date:  2008-05-01       Impact factor: 49.962

5.  Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-metal system.

Authors:  Matthew D Pickett; Julien Borghetti; J Joshua Yang; Gilberto Medeiros-Ribeiro; R Stanley Williams
Journal:  Adv Mater       Date:  2011-02-22       Impact factor: 30.849

6.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

Authors:  Myoung-Jae Lee; Chang Bum Lee; Dongsoo Lee; Seung Ryul Lee; Man Chang; Ji Hyun Hur; Young-Bae Kim; Chang-Jung Kim; David H Seo; Sunae Seo; U-In Chung; In-Kyeong Yoo; Kinam Kim
Journal:  Nat Mater       Date:  2011-07-10       Impact factor: 43.841

7.  Resistive switching and metallic-filament formation in Ag(2)S nanowire transistors.

Authors:  Zhi-Min Liao; Chong Hou; Qing Zhao; Ding-Sheng Wang; Ya-Dong Li; Da-Peng Yu
Journal:  Small       Date:  2009-11       Impact factor: 13.281

8.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

Authors:  Deok-Hwang Kwon; Kyung Min Kim; Jae Hyuck Jang; Jong Myeong Jeon; Min Hwan Lee; Gun Hwan Kim; Xiang-Shu Li; Gyeong-Su Park; Bora Lee; Seungwu Han; Miyoung Kim; Cheol Seong Hwang
Journal:  Nat Nanotechnol       Date:  2010-01-17       Impact factor: 39.213

9.  Memristive switching mechanism for metal/oxide/metal nanodevices.

Authors:  J Joshua Yang; Matthew D Pickett; Xuema Li; Douglas A A Ohlberg; Duncan R Stewart; R Stanley Williams
Journal:  Nat Nanotechnol       Date:  2008-06-15       Impact factor: 39.213

10.  Kinetic relationship between the voltage sensor and the activation gate in spHCN channels.

Authors:  Andrew Bruening-Wright; Fredrik Elinder; H Peter Larsson
Journal:  J Gen Physiol       Date:  2007-07       Impact factor: 4.086
  10 in total
  14 in total

1.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

2.  Neurochips: Considerations from a neurosurgeon's standpoint.

Authors:  Alejandra T Rabadán
Journal:  Surg Neurol Int       Date:  2021-04-19

3.  Emulating short-term synaptic dynamics with memristive devices.

Authors:  Radu Berdan; Eleni Vasilaki; Ali Khiat; Giacomo Indiveri; Alexandru Serb; Themistoklis Prodromakis
Journal:  Sci Rep       Date:  2016-01-04       Impact factor: 4.379

4.  Memory impedance in TiO2 based metal-insulator-metal devices.

Authors:  Li Qingjiang; Ali Khiat; Iulia Salaoru; Christos Papavassiliou; Xu Hui; Themistoklis Prodromakis
Journal:  Sci Rep       Date:  2014-03-31       Impact factor: 4.379

5.  Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy.

Authors:  D Carta; A P Hitchcock; P Guttmann; A Regoutz; A Khiat; A Serb; I Gupta; T Prodromakis
Journal:  Sci Rep       Date:  2016-02-19       Impact factor: 4.379

6.  Effect of Electron Energy Distribution on the Hysteresis of Plasma Discharge: Theory, Experiment, and Modeling.

Authors:  Hyo-Chang Lee; Chin-Wook Chung
Journal:  Sci Rep       Date:  2015-10-20       Impact factor: 4.379

7.  Trends and Challenges in Neuroengineering: Toward "Intelligent" Neuroprostheses through Brain-"Brain Inspired Systems" Communication.

Authors:  Stefano Vassanelli; Mufti Mahmud
Journal:  Front Neurosci       Date:  2016-09-23       Impact factor: 4.677

8.  Artificial Neuron Based on Integrated Semiconductor Quantum Dot Mode-Locked Lasers.

Authors:  Charis Mesaritakis; Alexandros Kapsalis; Adonis Bogris; Dimitris Syvridis
Journal:  Sci Rep       Date:  2016-12-19       Impact factor: 4.379

9.  STDP and STDP variations with memristors for spiking neuromorphic learning systems.

Authors:  T Serrano-Gotarredona; T Masquelier; T Prodromakis; G Indiveri; B Linares-Barranco
Journal:  Front Neurosci       Date:  2013-02-18       Impact factor: 4.677

10.  Memristive property's effects on the I-V characteristics of perovskite solar cells.

Authors:  Kai Yan; Bin Dong; Xinyu Xiao; Si Chen; Buxin Chen; Xue Gao; Hsienwei Hu; Wen Wen; Jingbo Zhou; Dechun Zou
Journal:  Sci Rep       Date:  2017-07-20       Impact factor: 4.379
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