Literature DB >> 19598160

Resistive switching and metallic-filament formation in Ag(2)S nanowire transistors.

Zhi-Min Liao1, Chong Hou, Qing Zhao, Ding-Sheng Wang, Ya-Dong Li, Da-Peng Yu.   

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Year:  2009        PMID： 19598160     DOI： 10.1002/smll.200900642

Source DB:  PubMed          Journal:  Small        ISSN： 1613-6810            Impact factor:   13.281


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  3 in total

1.  Two centuries of memristors.

Authors:  Themistoklis Prodromakis; Christofer Toumazou; Leon Chua
Journal:  Nat Mater       Date:  2012-05-22       Impact factor: 43.841

2.  Multi-valued logic gates based on ballistic transport in quantum point contacts.

Authors:  M Seo; C Hong; S-Y Lee; H K Choi; N Kim; Y Chung; V Umansky; D Mahalu
Journal:  Sci Rep       Date:  2014-01-22       Impact factor: 4.379

3.  Conductance Quantization in Resistive Random Access Memory.

Authors:  Yang Li; Shibing Long; Yang Liu; Chen Hu; Jiao Teng; Qi Liu; Hangbing Lv; Jordi Suñé; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2015-10-26       Impact factor: 4.703
  3 in total

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