Literature DB >> 19722537

Memristor-CMOS hybrid integrated circuits for reconfigurable logic.

Qiangfei Xia1, Warren Robinett, Michael W Cumbie, Neel Banerjee, Thomas J Cardinali, J Joshua Yang, Wei Wu, Xuema Li, William M Tong, Dmitri B Strukov, Gregory S Snider, Gilberto Medeiros-Ribeiro, R Stanley Williams.   

Abstract

Hybrid reconfigurable logic circuits were fabricated by integrating memristor-based crossbars onto a foundry-built CMOS (complementary metal-oxide-semiconductor) platform using nanoimprint lithography, as well as materials and processes that were compatible with the CMOS. Titanium dioxide thin-film memristors served as the configuration bits and switches in a data routing network and were connected to gate-level CMOS components that acted as logic elements, in a manner similar to a field programmable gate array. We analyzed the chips using a purpose-built testing system, and demonstrated the ability to configure individual devices, use them to wire up various logic gates and a flip-flop, and then reconfigure devices.

Entities:  

Year:  2009        PMID: 19722537     DOI: 10.1021/nl901874j

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  29 in total

1.  Observation of conducting filament growth in nanoscale resistive memories.

Authors:  Yuchao Yang; Peng Gao; Siddharth Gaba; Ting Chang; Xiaoqing Pan; Wei Lu
Journal:  Nat Commun       Date:  2012-03-13       Impact factor: 14.919

2.  Training and operation of an integrated neuromorphic network based on metal-oxide memristors.

Authors:  M Prezioso; F Merrikh-Bayat; B D Hoskins; G C Adam; K K Likharev; D B Strukov
Journal:  Nature       Date:  2015-05-07       Impact factor: 49.962

3.  Four-dimensional address topology for circuits with stacked multilayer crossbar arrays.

Authors:  Dmitri B Strukov; R Stanley Williams
Journal:  Proc Natl Acad Sci U S A       Date:  2009-11-16       Impact factor: 11.205

4.  Programmable nanowire circuits for nanoprocessors.

Authors:  Hao Yan; Hwan Sung Choe; SungWoo Nam; Yongjie Hu; Shamik Das; James F Klemic; James C Ellenbogen; Charles M Lieber
Journal:  Nature       Date:  2011-02-10       Impact factor: 49.962

5.  Nanoscale memristive radiofrequency switches.

Authors:  Shuang Pi; Mohammad Ghadiri-Sadrabadi; Joseph C Bardin; Qiangfei Xia
Journal:  Nat Commun       Date:  2015-06-25       Impact factor: 14.919

6.  Sparse coding with memristor networks.

Authors:  Patrick M Sheridan; Fuxi Cai; Chao Du; Wen Ma; Zhengya Zhang; Wei D Lu
Journal:  Nat Nanotechnol       Date:  2017-05-22       Impact factor: 39.213

7.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

Review 8.  Advances in Emerging Photonic Memristive and Memristive-Like Devices.

Authors:  Wenxiao Wang; Song Gao; Yaqi Wang; Yang Li; Wenjing Yue; Hongsen Niu; Feifei Yin; Yunjian Guo; Guozhen Shen
Journal:  Adv Sci (Weinh)       Date:  2022-08-09       Impact factor: 17.521

9.  Neuromorphic atomic switch networks.

Authors:  Audrius V Avizienis; Henry O Sillin; Cristina Martin-Olmos; Hsien Hang Shieh; Masakazu Aono; Adam Z Stieg; James K Gimzewski
Journal:  PLoS One       Date:  2012-08-06       Impact factor: 3.240

10.  Tunnel junction based memristors as artificial synapses.

Authors:  Andy Thomas; Stefan Niehörster; Savio Fabretti; Norman Shepheard; Olga Kuschel; Karsten Küpper; Joachim Wollschläger; Patryk Krzysteczko; Elisabetta Chicca
Journal:  Front Neurosci       Date:  2015-07-07       Impact factor: 4.677

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