Literature DB >> 18487312

Molecular dynamics simulation of Kv channel voltage sensor helix in a lipid membrane with applied electric field.

Manami Nishizawa1, Kazuhisa Nishizawa.   

Abstract

In this article, we present the results of the molecular dynamics simulations of amphiphilic helix peptides of 13 amino-acid residues, placed at the lipid-water interface of dipalmitoylphosphatidylcholine bilayers. The peptides are identical with, or are derivatives of, the N-terminal segment of the S4 helix of voltage-dependent K channel KvAP, containing four voltage-sensing arginine residues (R1-R4). Upon changing the direction of the externally applied electric field, the tilt angle of the wild-type peptide changes relative to the lipid-water interface, with the N-terminus heading up with an outward electric field. These movements were not observed using an octane membrane in place of the dipalmitoylphosphatidylcholine membrane, and were markedly suppressed by 1), substituting Phe located one residue before the first arginine (R1) with a hydrophilic residue (Ser, Thr); or 2), changing the periodicity rule of Rs from at-every-third to at-every-fourth position; or 3), replacing R1 with a lysine residue (K). These and other findings suggest that the voltage-dependent movement requires deep positioning of Rs when the resting (inward) electric field is present. Later, we performed simulations of the voltage sensor domain (S1-S4) of Kv1.2 channel. In simulations with a strong electric field (0.1 V/nm or above) and positional restraints on the S1 and S2 helices, S4 movement was observed consisting of displacement along the S4 helix axis and a screwlike axial rotation. Gating-charge-carrying Rs were observed to make serial interactions with E183 in S1 and E226 in S2, in the outer water crevice. A 30-ns-backward simulation started from the open-state model gave rise to a structure similar to the recent resting-state model, with S4 moving vertically approximately 6.7 A. The energy landscape around the movement of S4 appears very ragged due to salt bridges formed between gating-charge-carrying residues and negatively charged residues of S1, S2, and S3 helices. Overall, features of S3 and S4 movements are consistent with the recent helical-screw model. Both forward and backward simulations show the presence of at least two stable intermediate structures in which R2 and R3 form salt bridges with E183 or E226, respectively. These structures are the candidates for the states postulated in previous gating kinetic models, such as the Zagotta-Hoshi-Aldrich model, to account for more than one transition step per subunit for activation.

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Year:  2008        PMID: 18487312      PMCID: PMC2483744          DOI: 10.1529/biophysj.108.130658

Source DB:  PubMed          Journal:  Biophys J        ISSN: 0006-3495            Impact factor:   4.033


  77 in total

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Authors:  Vladimir Yarov-Yarovoy; David Baker; William A Catterall
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2.  Cell-penetrating peptides--a brief introduction.

Authors:  Peter Järver; Ulo Langel
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3.  Interaction between K+ channel gate modifier hanatoxin and lipid bilayer membranes analyzed by molecular dynamics simulation.

Authors:  Manami Nishizawa; Kazuhisa Nishizawa
Journal:  Eur Biophys J       Date:  2006-02-02       Impact factor: 1.733

4.  Dimeric organization of the yeast oligosaccharyl transferase complex.

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Journal:  Proc Natl Acad Sci U S A       Date:  2006-06-05       Impact factor: 11.205

5.  Environment of the gating charges in the Kv1.2 Shaker potassium channel.

Authors:  Werner Treptow; Mounir Tarek
Journal:  Biophys J       Date:  2006-03-13       Impact factor: 4.033

6.  A voltage sensor-domain protein is a voltage-gated proton channel.

Authors:  Mari Sasaki; Masahiro Takagi; Yasushi Okamura
Journal:  Science       Date:  2006-03-23       Impact factor: 47.728

7.  Interface connections of a transmembrane voltage sensor.

Authors:  J Alfredo Freites; Douglas J Tobias; Gunnar von Heijne; Stephen H White
Journal:  Proc Natl Acad Sci U S A       Date:  2005-10-10       Impact factor: 11.205

8.  Calibrated measurement of gating-charge arginine displacement in the KvAP voltage-dependent K+ channel.

Authors:  Vanessa Ruta; Jiayun Chen; Roderick MacKinnon
Journal:  Cell       Date:  2005-11-04       Impact factor: 41.582

9.  The intrinsic flexibility of the Kv voltage sensor and its implications for channel gating.

Authors:  Zara A Sands; Alessandro Grottesi; Mark S P Sansom
Journal:  Biophys J       Date:  2005-12-02       Impact factor: 4.033

10.  A voltage-gated proton-selective channel lacking the pore domain.

Authors:  I Scott Ramsey; Magdalene M Moran; Jayhong A Chong; David E Clapham
Journal:  Nature       Date:  2006-03-22       Impact factor: 49.962

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  27 in total

1.  Flow-induced beta-hairpin folding of the glycoprotein Ibalpha beta-switch.

Authors:  Xueqing Zou; Yanxin Liu; Zhongzhou Chen; Gloria Ines Cárdenas-Jirón; Klaus Schulten
Journal:  Biophys J       Date:  2010-08-09       Impact factor: 4.033

2.  Coupling between residues on S4 and S1 defines the voltage-sensor resting conformation in NaChBac.

Authors:  Tzur Paldi; Michael Gurevitz
Journal:  Biophys J       Date:  2010-07-21       Impact factor: 4.033

3.  Effect of sensor domain mutations on the properties of voltage-gated ion channels: molecular dynamics studies of the potassium channel Kv1.2.

Authors:  Lucie Delemotte; Werner Treptow; Michael L Klein; Mounir Tarek
Journal:  Biophys J       Date:  2010-11-03       Impact factor: 4.033

Review 4.  Constant electric field simulations of the membrane potential illustrated with simple systems.

Authors:  James Gumbart; Fatemeh Khalili-Araghi; Marcos Sotomayor; Benoît Roux
Journal:  Biochim Biophys Acta       Date:  2011-10-05

5.  Coupling of S4 helix translocation and S6 gating analyzed by molecular-dynamics simulations of mutated Kv channels.

Authors:  Manami Nishizawa; Kazuhisa Nishizawa
Journal:  Biophys J       Date:  2009-07-08       Impact factor: 4.033

6.  Membrane insertion of a voltage sensor helix.

Authors:  Chze Ling Wee; Alan Chetwynd; Mark S P Sansom
Journal:  Biophys J       Date:  2011-01-19       Impact factor: 4.033

7.  Intermediate states of the Kv1.2 voltage sensor from atomistic molecular dynamics simulations.

Authors:  Lucie Delemotte; Mounir Tarek; Michael L Klein; Cristiano Amaral; Werner Treptow
Journal:  Proc Natl Acad Sci U S A       Date:  2011-03-28       Impact factor: 11.205

8.  Challenges and advances in atomistic simulations of potassium and sodium ion channel gating and permeation.

Authors:  Kevin R DeMarco; Slava Bekker; Igor Vorobyov
Journal:  J Physiol       Date:  2018-12-19       Impact factor: 5.182

9.  Initial response of the potassium channel voltage sensor to a transmembrane potential.

Authors:  Werner Treptow; Mounir Tarek; Michael L Klein
Journal:  J Am Chem Soc       Date:  2009-02-18       Impact factor: 15.419

10.  The sliding-helix voltage sensor: mesoscale views of a robust structure-function relationship.

Authors:  Alexander Peyser; Wolfgang Nonner
Journal:  Eur Biophys J       Date:  2012-08-21       Impact factor: 1.733

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