Literature DB >> 17340667

Realization of atomically controlled dopant devices in silicon.

Frank J Ruess1, Wilson Pok, Thilo C G Reusch, Matthew J Butcher, Kuan Eng J Goh, Lars Oberbeck, Giordano Scappucci, Alex R Hamilton, Michelle Y Simmons.   

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Year:  2007        PMID： 17340667     DOI： 10.1002/smll.200600680

Source DB:  PubMed          Journal:  Small        ISSN： 1613-6810            Impact factor:   13.281


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  9 in total

1.  Spectroscopy of few-electron single-crystal silicon quantum dots.

Authors:  Martin Fuechsle; S Mahapatra; F A Zwanenburg; Mark Friesen; M A Eriksson; Michelle Y Simmons
Journal:  Nat Nanotechnol       Date:  2010-05-23       Impact factor: 39.213

2.  Atomically Traceable Nanostructure Fabrication.

Authors:  Josh B Ballard; Don D Dick; Stephen J McDonnell; Maia Bischof; Joseph Fu; James H G Owen; William R Owen; Justin D Alexander; David L Jaeger; Pradeep Namboodiri; Ehud Fuchs; Yves J Chabal; Robert M Wallace; Richard Reidy; Richard M Silver; John N Randall; James Von Ehr
Journal:  J Vis Exp       Date:  2015-07-17       Impact factor: 1.355

3.  Integrated logic circuits using single-atom transistors.

Authors:  J A Mol; J Verduijn; R D Levine; F Remacle; S Rogge
Journal:  Proc Natl Acad Sci U S A       Date:  2011-08-01       Impact factor: 11.205

4.  Single dopants in semiconductors.

Authors:  Paul M Koenraad; Michael E Flatté
Journal:  Nat Mater       Date:  2011-02       Impact factor: 43.841

5.  Engineering topological states in atom-based semiconductor quantum dots.

Authors:  M Kiczynski; S K Gorman; H Geng; M B Donnelly; Y Chung; Y He; J G Keizer; M Y Simmons
Journal:  Nature       Date:  2022-06-22       Impact factor: 69.504

6.  Single-donor ionization energies in a nanoscale CMOS channel.

Authors:  M Pierre; R Wacquez; X Jehl; M Sanquer; M Vinet; O Cueto
Journal:  Nat Nanotechnol       Date:  2009-12-06       Impact factor: 39.213

7.  Atom devices based on single dopants in silicon nanostructures.

Authors:  Daniel Moraru; Arief Udhiarto; Miftahul Anwar; Roland Nowak; Ryszard Jablonski; Earfan Hamid; Juli Cha Tarido; Takeshi Mizuno; Michiharu Tabe
Journal:  Nanoscale Res Lett       Date:  2011-07-29       Impact factor: 4.703

8.  Ultra-shallow dopant profiles as in-situ electrodes in scanning probe microscopy.

Authors:  Alexander Kölker; Martin Wolf; Matthias Koch
Journal:  Sci Rep       Date:  2022-03-08       Impact factor: 4.379

9.  Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon.

Authors:  Daniel W Drumm; Akin Budi; Manolo C Per; Salvy P Russo; Lloyd C L Hollenberg
Journal:  Nanoscale Res Lett       Date:  2013-02-27       Impact factor: 4.703
  9 in total

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