Literature DB >> 21258352

Single dopants in semiconductors.

Paul M Koenraad1, Michael E Flatté.   

Abstract

The sensitive dependence of a semiconductor's electronic, optical and magnetic properties on dopants has provided an extensive range of tunable phenomena to explore and apply to devices. Recently it has become possible to move past the tunable properties of an ensemble of dopants to identify the effects of a solitary dopant on commercial device performance as well as locally on the fundamental properties of a semiconductor. New applications that require the discrete character of a single dopant, such as single-spin devices in the area of quantum information or single-dopant transistors, demand a further focus on the properties of a specific dopant. This article describes the huge advances in the past decade towards observing, controllably creating and manipulating single dopants, as well as their application in novel devices which allow opening the new field of solotronics (solitary dopant optoelectronics).

Entities:  

Year:  2011        PMID: 21258352     DOI: 10.1038/nmat2940

Source DB:  PubMed          Journal:  Nat Mater        ISSN: 1476-1122            Impact factor:   43.841


  58 in total

1.  Spin splitting of single 0D impurity states in semiconductor heterostructure Quantum Wells.

Authors: 
Journal:  Phys Rev Lett       Date:  1996-02-19       Impact factor: 9.161

2.  Spontaneous resistance switching and low-frequency noise in quantum point contacts.

Authors: 
Journal:  Phys Rev Lett       Date:  1991-04-22       Impact factor: 9.161

3.  Detecting excitation and magnetization of individual dopants in a semiconductor.

Authors:  Alexander A Khajetoorians; Bruno Chilian; Jens Wiebe; Sergej Schuwalow; Frank Lechermann; Roland Wiesendanger
Journal:  Nature       Date:  2010-10-28       Impact factor: 49.962

4.  Spatial structure of Mn-Mn acceptor pairs in GaAs.

Authors:  A M Yakunin; A Yu Silov; P M Koenraad; J-M Tang; M E Flatté; W Van Roy; J De Boeck; J H Wolter
Journal:  Phys Rev Lett       Date:  2005-12-13       Impact factor: 9.161

5.  Transport spectroscopy of a single dopant in a gated silicon nanowire.

Authors:  H Sellier; G P Lansbergen; J Caro; S Rogge; N Collaert; I Ferain; M Jurczak; S Biesemans
Journal:  Phys Rev Lett       Date:  2006-11-16       Impact factor: 9.161

6.  Coherent dynamics of coupled electron and nuclear spin qubits in diamond.

Authors:  L Childress; M V Gurudev Dutt; J M Taylor; A S Zibrov; F Jelezko; J Wrachtrup; P R Hemmer; M D Lukin
Journal:  Science       Date:  2006-09-14       Impact factor: 47.728

7.  Electric-field control of a hydrogenic donor's spin in a semiconductor.

Authors:  A De; Craig E Pryor; Michael E Flatté
Journal:  Phys Rev Lett       Date:  2009-01-09       Impact factor: 9.161

8.  Excited-state spectroscopy using single spin manipulation in diamond.

Authors:  G D Fuchs; V V Dobrovitski; R Hanson; A Batra; C D Weis; T Schenkel; D D Awschalom
Journal:  Phys Rev Lett       Date:  2008-09-12       Impact factor: 9.161

9.  Making Mn substitutional impurities in InAs using a scanning tunneling microscope.

Authors:  Young Jae Song; Steven C Erwin; Gregory M Rutter; Phillip N First; Nikolai B Zhitenev; Joseph A Stroscio
Journal:  Nano Lett       Date:  2009-12       Impact factor: 11.189

10.  Imaging individual atoms inside crystals with ADF-STEM.

Authors:  P M Voyles; J L Grazul; D A Muller
Journal:  Ultramicroscopy       Date:  2003-09       Impact factor: 2.689

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  30 in total

1.  A single-atom transistor.

Authors:  Martin Fuechsle; Jill A Miwa; Suddhasatta Mahapatra; Hoon Ryu; Sunhee Lee; Oliver Warschkow; Lloyd C L Hollenberg; Gerhard Klimeck; Michelle Y Simmons
Journal:  Nat Nanotechnol       Date:  2012-02-19       Impact factor: 39.213

2.  Single-atom devices: Quantum engineering.

Authors:  Joaquin Fernández Rossier
Journal:  Nat Mater       Date:  2013-06       Impact factor: 43.841

3.  Room-temperature single-photon generation from solitary dopants of carbon nanotubes.

Authors:  Xuedan Ma; Nicolai F Hartmann; Jon K S Baldwin; Stephen K Doorn; Han Htoon
Journal:  Nat Nanotechnol       Date:  2015-07-13       Impact factor: 39.213

4.  Solid-state physics: Single spins in silicon see the light.

Authors:  Christoph D Weis; Thomas Schenkel
Journal:  Nature       Date:  2013-05-02       Impact factor: 49.962

5.  Spatially resolving valley quantum interference of a donor in silicon.

Authors:  J Salfi; J A Mol; R Rahman; G Klimeck; M Y Simmons; L C L Hollenberg; S Rogge
Journal:  Nat Mater       Date:  2014-04-06       Impact factor: 43.841

6.  All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics.

Authors:  Mohammad Rashidi; Wyatt Vine; Jacob A J Burgess; Marco Taucer; Roshan Achal; Jason L Pitters; Sebastian Loth; Robert A Wolkow
Journal:  J Vis Exp       Date:  2018-01-19       Impact factor: 1.355

7.  Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor.

Authors:  Enrico Prati; Masahiro Hori; Filippo Guagliardo; Giorgio Ferrari; Takahiro Shinada
Journal:  Nat Nanotechnol       Date:  2012-07-01       Impact factor: 39.213

8.  Site- and orbital-dependent charge donation and spin manipulation in electron-doped metal phthalocyanines.

Authors:  Cornelius Krull; Roberto Robles; Aitor Mugarza; Pietro Gambardella
Journal:  Nat Mater       Date:  2013-01-20       Impact factor: 43.841

9.  Quantum control of hybrid nuclear-electronic qubits.

Authors:  Gavin W Morley; Petra Lueders; M Hamed Mohammady; Setrak J Balian; Gabriel Aeppli; Christopher W M Kay; Wayne M Witzel; Gunnar Jeschke; Tania S Monteiro
Journal:  Nat Mater       Date:  2012-12-02       Impact factor: 43.841

10.  A two-atom electron pump.

Authors:  B Roche; R-P Riwar; B Voisin; E Dupont-Ferrier; R Wacquez; M Vinet; M Sanquer; J Splettstoesser; X Jehl
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

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