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Literature DB >> 17285644

Growth mechanism of truncated triangular III-V nanowires.

Jin Zou¹, Mohanchand Paladugu, Hui Wang, Graeme J Auchterlonie, Ya-Nan Guo, Yong Kim, Qiang Gao, Hannah J Joyce, H Hoe Tan, Chennupati Jagadish.

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Year: 2007 PMID： 17285644 DOI： 10.1002/smll.200600503

Source DB: PubMed Journal: Small ISSN： 1613-6810 Impact factor: 13.281

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8 in total

1. Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores.

Authors: M Paladugu; J Zou; Y N Guo; X Zhang; H J Joyce; Q Gao; H H Tan; C Jagadish; Y Kim
Journal: Nanoscale Res Lett Date: 2009-05-06 Impact factor: 4.703

2. Atomic scale surface structure and morphology of InAs nanowire crystal superlattices: the effect of epitaxial overgrowth.

Authors: J V Knutsson; S Lehmann; M Hjort; P Reinke; E Lundgren; K A Dick; R Timm; A Mikkelsen
Journal: ACS Appl Mater Interfaces Date: 2015-03-06 Impact factor: 9.229

3. Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy.

Authors: Guo-Wei Zha; Li-Chun Zhang; Ying Yu; Jian-Xing Xu; Si-Hang Wei; Xiang-Jun Shang; Hai-Qiao Ni; Zhi-Chuan Niu
Journal: Nanoscale Res Lett Date: 2015-01-27 Impact factor: 4.703

4. Threefold rotational symmetry in hexagonally shaped core-shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging.

Authors: Arman Davtyan; Thilo Krause; Dominik Kriegner; Ali Al-Hassan; Danial Bahrami; Seyed Mohammad Mostafavi Kashani; Ryan B Lewis; Hanno Küpers; Abbes Tahraoui; Lutz Geelhaar; Michael Hanke; Steven John Leake; Otmar Loffeld; Ullrich Pietsch
Journal: J Appl Crystallogr Date: 2017-04-13 Impact factor: 3.304

5. Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement.

Authors: Yunyan Zhang; George Davis; H Aruni Fonseka; Anton Velichko; Anders Gustafsson; Tillmann Godde; Dhruv Saxena; Martin Aagesen; Patrick W Parkinson; James A Gott; Suguo Huo; Ana M Sanchez; David J Mowbray; Huiyun Liu
Journal: ACS Nano Date: 2019-05-09 Impact factor: 15.881

Growth mechanism of truncated triangular III-V nanowires.

1. Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores.

2. Atomic scale surface structure and morphology of InAs nanowire crystal superlattices: the effect of epitaxial overgrowth.

3. Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy.

4. Threefold rotational symmetry in hexagonally shaped core-shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging.

5. Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement.

6. Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires.

7. Limits of III-V Nanowire Growth Based on Droplet Dynamics.

8. Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures.