Literature DB >> 16384157

Observation of a wurtzite form of gallium arsenide.

M I McMahon1, R J Nelmes.   

Abstract

After a pressure decrease to ambient, the high-pressure SC16 phase of GaAs is found to transform to the hexagonal wurtzite structure. This has been suggested for GaAs in calculations but never previously observed experimentally. Wurtzite-GaAs is found to be stable at ambient pressures at temperatures up to 473 K, with a structure that is only slightly distorted from ideal. On recompression, the ratio is constant with pressure and wurtzite-GaAs transforms to the orthorhombic phase at 18.7(9) GPa.

Entities:  

Year:  2005        PMID: 16384157     DOI: 10.1103/PhysRevLett.95.215505

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  6 in total

1.  Pressure-induced phase transition in wurtzite ZnTe: an ab initio study.

Authors:  Sebahaddin Alptekin
Journal:  J Mol Model       Date:  2011-06-18       Impact factor: 1.810

2.  Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores.

Authors:  M Paladugu; J Zou; Y N Guo; X Zhang; H J Joyce; Q Gao; H H Tan; C Jagadish; Y Kim
Journal:  Nanoscale Res Lett       Date:  2009-05-06       Impact factor: 4.703

3.  Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure.

Authors:  Wei Zhou; Xiao-Jia Chen; Jian-Bo Zhang; Xin-Hua Li; Yu-Qi Wang; Alexander F Goncharov
Journal:  Sci Rep       Date:  2014-09-25       Impact factor: 4.379

4.  Structural investigation of GaInP nanowires using X-ray diffraction.

Authors:  D Kriegner; J M Persson; T Etzelstorfer; D Jacobsson; J Wallentin; J B Wagner; K Deppert; M T Borgström; J Stangl
Journal:  Thin Solid Films       Date:  2013-09-30       Impact factor: 2.183

5.  Phase Transformation in Radially Merged Wurtzite GaAs Nanowires.

Authors:  Daniel Jacobsson; Fangfang Yang; Karla Hillerich; Filip Lenrick; Sebastian Lehmann; Dominik Kriegner; Julian Stangl; L Reine Wallenberg; Kimberly A Dick; Jonas Johansson
Journal:  Cryst Growth Des       Date:  2015-08-24       Impact factor: 4.076

6.  Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction.

Authors:  Arman Davtyan; Sebastian Lehmann; Dominik Kriegner; Reza R Zamani; Kimberly A Dick; Danial Bahrami; Ali Al-Hassan; Steven J Leake; Ullrich Pietsch; Václav Holý
Journal:  J Synchrotron Radiat       Date:  2017-08-09       Impact factor: 2.616

  6 in total

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