Literature DB >> 15601102

Phosphine dissociation on the Si(001) surface.

H F Wilson1, O Warschkow, N A Marks, S R Schofield, N J Curson, P V Smith, M W Radny, D R McKenzie, M Y Simmons.   

Abstract

Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si(001) surface. On the basis of a comprehensive survey of possible structures, energetics, and simulated STM images, three prominent STM features are assigned to structures containing surface bound PH2, PH, and P, respectively. Collectively, the assigned features outline for the first time a detailed mechanism of PH3 dissociation and P incorporation on Si(001).

Entities:  

Year:  2004        PMID: 15601102     DOI: 10.1103/PhysRevLett.93.226102

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Spectroscopy of few-electron single-crystal silicon quantum dots.

Authors:  Martin Fuechsle; S Mahapatra; F A Zwanenburg; Mark Friesen; M A Eriksson; Michelle Y Simmons
Journal:  Nat Nanotechnol       Date:  2010-05-23       Impact factor: 39.213

2.  Single dopants in semiconductors.

Authors:  Paul M Koenraad; Michael E Flatté
Journal:  Nat Mater       Date:  2011-02       Impact factor: 43.841

3.  Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon.

Authors:  Daniel W Drumm; Akin Budi; Manolo C Per; Salvy P Russo; Lloyd C L Hollenberg
Journal:  Nanoscale Res Lett       Date:  2013-02-27       Impact factor: 4.703

4.  A surface code quantum computer in silicon.

Authors:  Charles D Hill; Eldad Peretz; Samuel J Hile; Matthew G House; Martin Fuechsle; Sven Rogge; Michelle Y Simmons; Lloyd C L Hollenberg
Journal:  Sci Adv       Date:  2015-10-30       Impact factor: 14.136

  4 in total

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