Literature DB >> 9993660

Structural and electronic properties of narrow-band-gap semiconductors: InP, InAs, and InSb.

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Abstract

Entities:  

Year:  1990        PMID： 9993660     DOI： 10.1103/physrevb.41.12079

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  Band gaps of crystalline solids from Wannier-localization-based optimal tuning of a screened range-separated hybrid functional.

Authors:  Dahvyd Wing; Guy Ohad; Jonah B Haber; Marina R Filip; Stephen E Gant; Jeffrey B Neaton; Leeor Kronik
Journal:  Proc Natl Acad Sci U S A       Date:  2021-08-24       Impact factor: 11.205

2.  First Principle Calculation of Accurate Electronic and Related Properties of Zinc Blende Indium Arsenide (zb-InAs).

Authors:  Yacouba Issa Diakite; Yuriy Malozovsky; Cheick Oumar Bamba; Lashounda Franklin; Diola Bagayoko
Journal:  Materials (Basel)       Date:  2022-05-21       Impact factor: 3.748
  2 in total

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