Literature DB >> 9985881

Localization and percolation in semiconductor alloys: GaAsN vs GaAsP.

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Abstract

Year:  1996        PMID： 9985881     DOI： 10.1103/physrevb.54.17568

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  4 in total

1.  Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter.

Authors:  Chee-Keong Tan; Damir Borovac; Wei Sun; Nelson Tansu
Journal:  Sci Rep       Date:  2016-02-24       Impact factor: 4.379

2.  Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects.

Authors:  Shula Chen; Yuqing Huang; Dennis Visser; Srinivasan Anand; Irina A Buyanova; Weimin M Chen
Journal:  Nat Commun       Date:  2018-09-03       Impact factor: 14.919

3.  Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition.

Authors:  M B Shoker; Olivier Pagès; V J B Torres; A Polian; J-P Itié; G K Pradhan; C Narayana; M N Rao; R Rao; C Gardiennet; G Kervern; K Strzałkowski; F Firszt
Journal:  Sci Rep       Date:  2020-11-13       Impact factor: 4.379

4.  Band gap bowing in NixMg1-xO.

Authors:  Christian A Niedermeier; Mikael Råsander; Sneha Rhode; Vyacheslav Kachkanov; Bin Zou; Neil Alford; Michelle A Moram
Journal:  Sci Rep       Date:  2016-08-09       Impact factor: 4.379
  4 in total

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