Literature DB >> 9985795

Ab initio study of oxygen point defects in GaAs, GaN, and AlN.

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Abstract

Entities:  

Year:  1996        PMID： 9985795     DOI： 10.1103/physrevb.54.16676

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  6 in total

1.  On the Chemical Origin of the Gap Bowing in (GaAs)(1-x)Ge(2x) Alloys: A Combined DFT-QSGW Study.

Authors:  Giacomo Giorgi; Mark Van Schilfgaarde; Anatoli Korkin; Koichi Yamashita
Journal:  Nanoscale Res Lett       Date:  2010-01-07       Impact factor: 4.703

2.  Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications.

Authors:  B Mitchell; D Timmerman; J Poplawsky; W Zhu; D Lee; R Wakamatsu; J Takatsu; M Matsuda; W Guo; K Lorenz; E Alves; A Koizumi; V Dierolf; Y Fujiwara
Journal:  Sci Rep       Date:  2016-01-04       Impact factor: 4.379

3.  Investigation on the photoconductive behaviors of an individual AlN nanowire under different excited lights.

Authors:  Fei Liu; Lifang Li; Tongyi Guo; Haibo Gan; Xiaoshu Mo; Jun Chen; Shaozhi Deng; Ningsheng Xu
Journal:  Nanoscale Res Lett       Date:  2012-08-11       Impact factor: 4.703

4.  Conduction-band effective mass and bandgap of ZnSnN2 earth-abundant solar absorber.

Authors:  Xiang Cao; Fumio Kawamura; Yoshihiko Ninomiya; Takashi Taniguchi; Naoomi Yamada
Journal:  Sci Rep       Date:  2017-11-08       Impact factor: 4.379

Review 5.  AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects.

Authors:  Songrui Zhao; Jiaying Lu; Xu Hai; Xue Yin
Journal:  Micromachines (Basel)       Date:  2020-01-23       Impact factor: 2.891

6.  Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC.

Authors:  Dong-Hyeon Kim; Michael A Schweitz; Sang-Mo Koo
Journal:  Micromachines (Basel)       Date:  2021-03-08       Impact factor: 2.891
  6 in total

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