Literature DB >> 9978750

Native defects in gallium nitride.

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Abstract

Entities:  

Year:  1995        PMID： 9978750     DOI： 10.1103/physrevb.51.17255

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  5 in total

1.  Direct growth of freestanding GaN on C-face SiC by HVPE.

Authors:  Yuan Tian; Yongliang Shao; Yongzhong Wu; Xiaopeng Hao; Lei Zhang; Yuanbin Dai; Qin Huo
Journal:  Sci Rep       Date:  2015-06-02       Impact factor: 4.379

2.  Rogue waves lead to the instability in GaN semiconductors.

Authors:  M E Yahia; R E Tolba; N A El-Bedwehy; S K El-Labany; W M Moslem
Journal:  Sci Rep       Date:  2015-07-24       Impact factor: 4.379

3.  On the phenomenon of large photoluminescence red shift in GaN nanoparticles.

Authors:  Ahmed Ben Slimane; Adel Najar; Rami Elafandy; Damián P San-Román-Alerigi; Dalaver Anjum; Tien Khee Ng; Boon S Ooi
Journal:  Nanoscale Res Lett       Date:  2013-07-31       Impact factor: 4.703

4.  One-step fabrication of porous GaN crystal membrane and its application in energy storage.

Authors:  Lei Zhang; Shouzhi Wang; Yongliang Shao; Yongzhong Wu; Changlong Sun; Qin Huo; Baoguo Zhang; Haixiao Hu; Xiaopeng Hao
Journal:  Sci Rep       Date:  2017-03-10       Impact factor: 4.379

5.  Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition.

Authors:  Kohei Ueno; Fudetani Taiga; Atsushi Kobayashi; Hiroshi Fujioka
Journal:  Sci Rep       Date:  2019-12-27       Impact factor: 4.379
  5 in total

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